Andre R. Stegner
Technische Universität München
26 Papers
139 Citations
Andre R. Stegner is an academic researcher from Technische Universität München. The author has contributed to research in topics: Electron paramagnetic resonance & Dangling bond. The author has an hindex of 17, co-authored 24 publications. Previous affiliations of Andre R. Stegner include Infineon Technologies.
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Papers
Electronic Transport in Phosphorus-Doped Silicon Nanocrystal Networks
Andre R. Stegner,Rui N. Pereira,K. Klein,Robert Lechner,Roland Dietmueller,Martin S. Brandt,Martin Stutzmann,Hartmut Wiggers +7 more
TL;DR: Investigation of the role of doping and paramagnetic states on the electronic transport of networks assembled from freestanding Si nanocrystals shows that different subsets of P-doped nanocrystal contribute to the different transport processes.
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Electronic properties of doped silicon nanocrystal films
Robert Lechner,Andre R. Stegner,Rui N. Pereira,Roland Dietmueller,Martin S. Brandt,André Dr. Ebbers,Martin Trocha,Hartmut Wiggers,Martin Stutzmann +8 more
TL;DR: In this paper, the structural and electrical properties before and after laser annealing of spin-coated films of doped silicon nanocrystals (ncs) produced from the gas phase are presented.
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Spin echoes in the charge transport through phosphorus donors in silicon.
TL;DR: Electrical spin echo tomography can be used to study the dynamics of the spin-dependent transport processes, e.g., in realistic spin qubit devices for quantum information processing.
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Low-Cost Post-Growth Treatments of Crystalline Silicon Nanoparticles Improving Surface and Electronic Properties
Sabrina Niesar,Rui N. Pereira,Andre R. Stegner,Nadine Erhard,Marco Hoeb,A. Baumer,Hartmut Wiggers,Martin S. Brandt,Martin Stutzmann +8 more
TL;DR: In this paper, the authors exploit low-cost post-growth treatment routes based on wet-etching in hydrofluoric acid plus surface hydrosilylation or annealing enabling a complete native oxide removal and a reduction of the defect density by up to two orders of magnitude.
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Solution-Processed Networks of Silicon Nanocrystals: The Role of Internanocrystal Medium on Semiconducting Behavior
Rui N. Pereira,Sabrina Niesar,W. B. You,A. F. da Cunha,Nadine Erhard,Andre R. Stegner,Hartmut Wiggers,Marc Georg Willinger,Martin Stutzmann,Martin S. Brandt +9 more
TL;DR: In this article, surface-oxidized and hydrogen-terminated silicon nanocrystals (Si-NCs), both intrinsic and n-type doped, were produced on flexible plastic foil from nanoparticle inks.
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