This silicon-carbide semiconductor device (101) has a silicon-carbide substrate (10), a main electrode (52), a first barrier layer (70a), and a wiring layer (60). The main electrode (52) is provided directly on top of the silicon-carbide substrate (10). The first barrier layer (70a) is provided on top of the main electrode (52) and is made from a conductive material that does not contain aluminum. The wiring layer (60) is provided on top of the first barrier layer (70a), is isolated from the main electrode (52) by the first barrier layer (70a), and is made from a material that does contain aluminum.

Silicon carbide semiconductor device

/pdf/zwitterionic-si-c-si-p-and-si-p-si-p-four-membered-rings-4zq7jgofny.pdf

Zwitterionic Si-C-Si-P and Si-P-Si-P four-membered rings with two-coordinate phosphorus atoms.

Photosensitive devices and associated methods are provided. In one aspect, for example, a photosensitive imager device can include a semiconductor substrate having multiple doped regions forming at least one junction, a textured region coupled to the semiconductor substrate and positioned to interact with electromagnetic radiation, and an electrical transfer element coupled to the semiconductor substrate and operable to transfer an electrical signal from the at least one junction. In one aspect, the textured region is operable to facilitate generation of an electrical signal from the detection of infrared electromagnetic radiation. In another aspect, interacting with electromagnetic radiation further includes increasing the semiconductor substrate's effective absorption wavelength as compared to a semiconductor substrate lacking a textured region.

Photosensitive imaging devices and associated methods

A nitride semiconductor (34, 234) is grown on a silicon substrate (10, 210) by depositing a few mono-layers of aluminum (14,214) to protect the silicon substrate from ammonia used during the growth process, and then forming a nucleation layer (16, 216) from aluminum nitride and a buffer structure (32, 232) including multiple superlattices (18, 26, 218) of AlRGa(llR)N semiconductors having different compositions and having an intermediate layer (24, 224) of GaN or other Ga­rich nitride semiconductor. The resulting structure has superior crystal quality. The silicon substrate used in epitaxial growth may be removed before completion of the device so as to provide superior electrical properties in devices such as high-electron mobility transistors.

Gallium nitride-based devices and manufacturing process

In one aspect, the present invention provides a silicon photodetector having a surface layer that is doped with sulfur inclusions with an average concentration in a range of about 0.5 atom percent to about 1.5 atom percent. The surface layer forms a diode junction with an underlying portion of the substrate. A plurality of electrical contacts allow application of a reverse bias voltage to the junction in order to facilitate generation of an electrical signal, e.g., a photocurrent, in response to irradiation of the surface layer. The photodetector exhibits a responsivity greater than about 1 A/W for incident wavelengths in a range of about 250 nm to about 1050 nm, and a responsivity greater than about 0.1 A/W for longer wavelengths, e.g., up to about 3.5 microns.

Silicon-based visible and near-infrared optoelectric devices

A vertical Schottky diode including an N-type silicon carbide layer of low doping level formed by epitaxy on a silicon carbide substrate of high doping level. The periphery of the active area of the diode is coated with a P-type epitaxial silicon carbide layer. A trench crosses the P-type epitaxial layer and penetrates into at least a portion of the height of the N-type epitaxial layer beyond the periphery of the active area. The doping level of the P-type epitaxial layer is chosen so that, for the maximum voltage that the diode is likely to be subjected to, the equipotential surfaces corresponding to approximately ¼ to ¾ of the maximum voltage extend up to the trench.

Schottky diode on a silicon carbide substrate

The gettering efficiency process in platinum doped fast rectifiers was studied by transmission electron microscopy. We have observed orthorhombic PtSi‐(monocrystalline) precipitates in n+ gettering region with the following epitaxial relationship: (011)PtSi//{110}Si with [010]PtSi//〈112〉Si. This precipitation can be related to the presence of orthorhombic SiP particles induced by highly phosphorus doping, without any dislocations around them.

Platinum gettering in silicon by silicon phosphide precipitates

A monolithic assembly of a vertical fast diode with at least one additional vertical component, in which the fast diode is formed by an N-type substrate in one surface of which an N + -type continuous region is formed and in the other surface of which a P + -type discontinuous region is formed. The bottom surface of the assembly is coated with a single metallization. The other vertical component is, for example, a diode.

Monolithic assembly of semiconductor components including a fast diode

Gold and platinum depth profile measurements were reported using different techniques (secondary ion mass spectroscopy, SIMS; neutron activation analysis, NAA; capacitance–voltage measurement, C–V) which were able to detect low concentrations of the metals. The kick-out simulation reproduced well the experimental profiles, provided an eventual metal accumulation was taken into account resulting in a shift of the metal source and of the self-interstitials sink. The influence of high As concentration on the Au solubility limit was noticed also.

Gold and platinum profiles in fast power devices

A vertical rectifying and protection power diode, formed in a lightly-doped semiconductor layer of a first conductivity type, resting on a heavily-doped substrate of the first conductivity type, having a first ring-shaped region, of the first conductivity type more heavily-doped than the layer and more lightly doped than the substrate, surrounding an area of the layer and extending to the substrate; and a second ring-shaped region, doped of the second conductivity type, extending at the surface of the first region and on either side thereof; a first electrode having a thin layer of a material capable of forming a Schottky diode with the layer, resting on the area of the layer and on at least a portion of the second ring-shaped region with which it forms an ohmic contact.

Rectifying and protection diode

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