An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

Chemistries that Facilitate Nanotechnology Kim E. Sapsford,† W. Russ Algar, Lorenzo Berti, Kelly Boeneman Gemmill,‡ Brendan J. Casey,† Eunkeu Oh, Michael H. Stewart, and Igor L. Medintz*,‡ †Division of Biology, Department of Chemistry and Materials Science, Office of Science and Engineering Laboratories, U.S. Food and Drug Administration, Silver Spring, Maryland 20993, United States ‡Center for Bio/Molecular Science and Engineering Code 6900 and Division of Optical Sciences Code 5611, U.S. Naval Research Laboratory, Washington, D.C. 20375, United States College of Science, George Mason University, 4400 University Drive, Fairfax, Virginia 22030, United States Department of Biochemistry and Molecular Medicine, University of California, Davis, School of Medicine, Sacramento, California 95817, United States Sotera Defense Solutions, Crofton, Maryland 21114, United States

Functionalizing nanoparticles with biological molecules: developing chemistries that facilitate nanotechnology.

The unique plasma-specific features and physical phenomena in the organization of nanoscale soild-state systems in a broad range of elemental composition, structure, and dimensionality are critically reviewed. These effects lead to the possibility to localize and control energy and matter at nanoscales and to produce self-organized nano-solids with highly unusual and superior properties. A unifying conceptual framework based on the control of production, transport, and self-organization of precursor species is introduced and a variety of plasma-specific non-equilibrium and kinetics-driven phenomena across the many temporal and spatial scales is explained. When the plasma is localized to micrometer and nanometer dimensions, new emergent phenomena arise. The examples range from semiconducting quantum dots and nanowires, chirality control of single-walled carbon nanotubes, ultra-fine manipulation of graphenes, nano-diamond, and organic matter to nano-plasma effects and nano-plasmas of different states of matter.

Plasma nanoscience: from nano-solids in plasmas to nano-plasmas in solids

The unique plasma-specific features and physical phenomena in the organization of nanoscale solid-state systems in a broad range of elemental composition, structure, and dimensionality are critically reviewed. These effects lead to the possibility to localize and control energy and matter at nanoscales and to produce self-organized nano-solids with highly unusual and superior properties. A unifying conceptual framework based on the control of production, transport, and self-organization of precursor species is introduced and a variety of plasma-specific non-equilibrium and kinetics-driven phenomena across the many temporal and spatial scales is explained. When the plasma is localized to micrometer and nanometer dimensions, new emergent phenomena arise. The examples range from semiconducting quantum dots and nanowires, chirality control of single-walled carbon nanotubes, ultra-fine manipulation of graphenes, nano-diamond, and organic matter, to nano-plasma effects and nano-plasmas of different states of matter.

Plasma Nanoscience: from Nano-Solids in Plasmas to Nano-Plasmas in Solids

Nonthermal plasmas have emerged as a viable synthesis technique for nanocrystal materials. Inherently solvent and ligand-free, nonthermal plasmas offer the ability to synthesize high purity nanocrystals of materials that require high synthesis temperatures. The nonequilibrium environment in nonthermal plasmas has a number of attractive attributes: energetic surface reactions selectively heat the nanoparticles to temperatures that can strongly exceed the gas temperature; charging of nanoparticles through plasma electrons reduces or eliminates nanoparticle agglomeration; and the large difference between the chemical potentials of the gaseous growth species and the species bound to the nanoparticle surfaces facilitates nanocrystal doping. This paper reviews the state of the art in nonthermal plasma synthesis of nanocrystals. It discusses the fundamentals of nanocrystal formation in plasmas, reviews practical implementations of plasma reactors, surveys the materials that have been produced with nonthermal pla...

Nonthermal Plasma Synthesis of Nanocrystals: Fundamental Principles, Materials, and Applications

The structural and electrical properties before and after laser annealing of spin-coated films of doped silicon nanocrystals (ncs) produced from the gas phase are presented. While the as-deposited films form a porous network of ncs and show only weak electrical conductivity independent of the doping level, a laser annealing step leads to sintering and melting of the particles and tremendously increases the lateral conductivity. By controlled doping of the initial particles, the conductivity can be further enhanced by seven orders of magnitude reaching values of up to 5 Ω−1 cm−1. The conductivity is found to increase with the doping concentration for highly doped samples while it is independent of the doping level below a critical concentration of 1019 cm−3. The results are discussed within a compensational model taking into account the defect concentration from electron paramagnetic resonance measurements and the activation energies of the electrical conductivity. Surface segregation of phosphorus during ...

Electronic properties of doped silicon nanocrystal films

Thin films of printable semiconduct-ing materials are anticipated to open new fields of semi-conductor applications where bulk single crystal technol-ogy will be too expensive. Among available semiconductor nanocrystals (ncs), silicon (Si) and silicon-germanium (SiGe) ncs are promising candidates due to their stability, non-toxicity, and the natural abundance of their constituent elements. In the field of thermoelectrics, Si and SiGe pow-ders and particles have already been demonstrated to lead to respectable results in ceramically pressed and sintered structures [1, 2]. To extend the range of applications for this material system towards cost-efficient thin film ther-moelectric devices, we here propose a method to produce thermoelectrically functional thin films by printing Si ncs onto polymer foils followed by pulsed laser annealing. There already exist numerous methods that can yield Si ncs, such as nanoporous etching [3, 4], mechanical milling [5], segregation of Si ncs within a suboxide matrix by an-nealing [6, 7], laser ablation [8, 9], and plasma methods producing Si ncs from gaseous SiH

Thermoelectric effect in laser annealed printed nanocrystalline silicon layers

Studies focusing on the functionalization of the surface of free silicon nanoparticles are presented. This functionalization is applied to hydrogen-terminated silicon nanoparticles to evaluate how far the well-known solution-phase chemistry of thermal-, radical-, Lewis acid- and UV light-mediated hydrosilylation can be applied to the surface chemistry of silicon nanoparticles. The efficiencies of hydrosilylation for thermal-, radical- and Lewis acid-mediated reactions on silicon nanoparticles surfaces, deduced from the intensity of the ν(Si–H) absorption, are found to be comparable.

Functionalization of silicon nanoparticles via hydrosilylation with 1-alkenes

Charge transfer between silicon nanocrystals (Si-nc) and organic semiconductors has been investigated via light-induced electron spin resonance (LESR). Composites of Si-nc with the hole conductor poly(3-hexylthiophene) (P3HT) and with the electron acceptor [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) have been investigated. The LESR measurements allow one to quantify light-induced charge transfer between Si-nc and P3HT, which results in positive P3HT polarons. PCBM, in contrast, acts as an electron acceptor in composites with Si-nc, and after illumination, negative PCBM radicals are created. These results are discussed in terms of light-induced generation and separation of charge carriers in the hybrid composites.

Light-induced charge transfer in hybrid composites of organic semiconductors and silicon nanocrystals

The invention relates to a method for producing higher hydridosilane wherein at least one lower hydridosilane and at least one heterogeneous catalyst are brought to reaction, wherein the at least one catalyst comprises Cu, Ni, Cr and/or Co applied to a carrier and/or oxide of Cu, Ni, Cr and/or Co applied to a carrier, the hydridosilane that can be produced according to said method and use thereof.

Process for preparing higher hydridosilanes

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