78 Papers
135 Citations
Amporn Poyai is an academic researcher from King Mongkut's Institute of Technology Ladkrabang. The author has contributed to research in topics: Diode & Silicon. The author has an hindex of 5, co-authored 78 publications.
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Papers
The low power 3D-magnetotransistor based on CMOS technology
Chana Leepattarapongpan,Toempong Phetchakul,Naritchaphan Penpondee,Puttapon Pengpad,Arckom Srihapat,Ekalak Chaowicharat,Charndet Hruanun,Amporn Poyai +7 more
- 01 Oct 2011
TL;DR: In this article, a 3D magnetotransistor for detecting magnetic field in three dimensions (B X, B Y, and B Z ) by relying on the difference between base and collector currents (ΔI CB ) was presented.
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Oxygen Control on Nanocrystal-AlON Films by Reactive Gas-Timing Technique R.F. Magnetron Sputtering and Annealing Effect
Win Bunjongpru,S. Porntheeraphat,N. Somwang,P. Khomdet,Charndet Hruanun,Amporn Poyai,Jiti Nukeaw +6 more
TL;DR: In this article, the authors used radio frequency (r.f.) magnetron sputtering from high purity aluminum (99.999% Al) target with a novel reactive gas-timing technique.
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An improvement of electrical characteristics of P-N diode by X-ray irradiation method
Jirawat Prabket,Itsara Srithanachai,Surada Ueamanapong,Amporn Poyai,Wisut Titiroongruang,Surasak Niemcharoen,Preecha P. Yupapin +6 more
TL;DR: A new technique of semiconductor fabrication technology is presented, where a soft X-ray annealing method is proposed as a new technique and used in this work, and the characteristics of P-N diode after X- Ray irradiation is improved significantly.
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The effect of deviation current to 5-contacts vertical Hall device
Toempong Phetchakul,Sawatdipong Poonsawat,Amporn Poyai +2 more
- 01 Jun 2016
TL;DR: In this paper, the authors presented the new model of 5-contacts vertical Hall device and showed that deviation currents from the middle contact caused the voltage drop between the voltage contacts.
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The effects of temperature and device demension of MOSFETs on the DC characteristics of CMOS inverter
A. Ruangphanit,Kunagone Kiddee,Amporn Poyai,Yothin Wongprasert,Surasak Niemcharoen,Rangson Muanghlua +5 more
- 16 May 2012
TL;DR: In this article, the temperature dependence of the MOSFET parameters as well as the small dimension effects on the dc characteristics of submicrometer CMOS inverters operated over the temperature range of 27 − 125 degree Celsius are presented.
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