The main aim of this special issue is to report the recent advances and new trends in memristors and nonequilibrium stochastic multistable systems, both theoretically and experimentally, within an interdisciplinary context. In particular, memristors are multistable systems whose switching dynamics is a stochastic process, which can be controlled by internal and external noise sources, unveiling the constructive role of random fluctuations. Furthermore, the use of memristors as memory elements in neuromorphic systems with noise-assisted persistence of memory states, chaotic dynamics, metastable chaos and chaos synchronization, new stochastic nonlinear models, noise-induced phenomena such as stochastic resonance, noise enhanced stability and phase transitions phenomena in memristors will be illustrated in the contributions of this special issue. 

Memristors and nonequilibrium stochastic multistable systems


 By coupling memristors to nonlinear circuits, more complex dynamical behaviors can be induced. However, to date, there has been insufficient attention given to high-dimensional chaotic systems based on memristors. In this paper, a magnetic-controlled memristor is combined with a three-dimensional chaotic system, resulting in a five-dimensional memristive chaotic system. Through dynamic analysis and numerical simulations, the chaotic nature of the system is elucidated based on fundamental system behaviors, including Lyapunov dimension, dissipativity, stability of equilibrium points, 0-1 test, and Poincaré mapping. During the complex dynamical analysis of this system, unique dynamical behaviors are discovered, including intermittent chaos, transient chaos, extreme multistability, and offset-boosting. Moreover, the consistency between numerical calculations and the physical implementation of the actual system is verified through equivalent circuit design. Finally, this system is applied to image encryption, leading to the design of an efficient and secure hyper-chaotic image encryption algorithm, whose effectiveness is confirmed through several security tests

A 5-D memristive hyperchaotic system with extreme multistability and its application in image encryption

In this article an enhanced and simplified alteration of a memristor model based on tantalum oxide is proposed. Its application in hybrid memory crossbars is presented. The suggested model is founded on the classical Hewlett Packard Ta 2 O 5 memristor model including several main refinements – incorporation of a simple window function, enhancement of its efficiency applying rationalized expression for the current-voltage relation and by substitution of the Heaviside function with continuous and smooth logistic function. The memristor model’s parameters are obtained by collation to tentative current-voltage characteristics and applying procedure for parameters estimation. A LTSpice library model is generated in agreement to the considered memristor model. The modified model of tantalum oxide memristor is tested in a hybrid memory crossbar. After comparison to several basic models the major advantages of the suggested memristor model are demonstrated – better performance, higher speed of operation, improved adjustment process and a sound switching representation.

A Simplified Model of Tantalum Oxide Based Memristor and Application in Memory Crossbars

This paper investigates a simple memristor emulator consisting of a diode bridge and a capacitor. It exhibits pinched hysteresis loops, and what is more striking is the higher frequency, as it operates up to greater than 5 MHz. Based on the proposed memristor, a higher-frequency Colpitts circuit was established. According to the mathematical model of the system, the system only possesses one unstable equilibrium point. Period doubling bifurcation, reverse periodic doubling bifurcation, different types of periodic and chaotic orbits, transient chaos, coexisting bifurcations and offset boosting are depicted. More interestingly, it has coexisting multiple attractors with different topologies, such as a chaotic attractor accompanied with periodic orbits, period-1 orbits with bicuspid structure and periodic-2 orbits with tridentate structure. Moreover, a hardware circuit using discrete components was fabricated and experimental measurements were consistent with the MATLAB numerical results, further confirming the real feasibility of the proposed circuit.

https://www.mdpi.com/2227-7390/10/24/4820/pdf?version=1671439953

A Memristor-Based Colpitts Oscillator Circuit

Tuning the resistive switching in tantalum oxide-based memristors by oxygen pressure during low temperature laser synthesis

The amorphous thin TaOx films (x ≤ 5) of different thicknesses with different levels of oxygen vacancy content, which are promising for use as an active region of non-volatile memristors, were fabricated by the pulsed laser deposition in a drop-free mode on the c-sapphire substrates. The films were obtained from tantalum metal targets at substrate temperatures of 25 °C and 350 °C in the oxygen pressure range from 0.5 to 50 mTorr. The relationship between the partial oxygen pressure and the optical, electrical, and chemical properties of the films was studied. It was found that the amorphous TaOx phase, which is a source of defects associated with oxygen deficiency, required for the creation of memristors, appears only at low oxygen pressures in the chamber (~ 5 × 10−4 Torr), this leads to low values resistivity in the films (~ 10−3 Ohm · cm). Memristor structures Ag(Pt)/TaOx/TaOy/Ta/c-Al2O3 (x > y) in cross-bar geometry have been created that do not require electroforming, due to the choice of design and deposition conditions. Memristor using two mechanisms of resistive switching based on oxygen vacancies and silver cations showed very reliable RS performance with memory window performance RON/ROFF ~ 103 and RESET operating voltage ~ 1 V.

Laser synthesis of non-volatile memristor structures based on tantalum oxide thin films

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Laser synthesis of non-volatile memristor structures based on tantalum oxide thin films