Albert Minj
Katholieke Universiteit Leuven
44 Papers
224 Citations
Albert Minj is an academic researcher from Katholieke Universiteit Leuven. The author has contributed to research in topics: Kelvin probe force microscope & Heterojunction. The author has an hindex of 10, co-authored 38 publications. Previous affiliations of Albert Minj include University of Strasbourg & University of Valencia.
Chat about Author
Papers
Indium segregation in AlInN/AlN/GaN heterostructures
TL;DR: AlInN/AlN/GaN heterostructures were characterized by atomic force microscopy as discussed by the authors, showing enhanced conductivity regions related to In-rich traces within channels and V-defects.
52
Assessment of Polarity in GaN Self-Assembled Nanowires by Electrical Force Microscopy.
TL;DR: The precise quantitative analysis of the tip- sample interaction by multidimensional spectroscopic measurements, combined with advanced data analysis, has allowed the separate characterization of electrostatic and van der Waals forces as a function of tip-sample distance.
48
Impact of Charge trapping on Imprint and its Recovery in HfO 2 based FeFET
Yusuke Higashi,L. Di Piazza,M. Suzuki,Dimitri Linten,J. Van Houdt,Nicolo Ronchi,Ben Kaczer,K. Banerjee,S. R. C. McMitchell,Barry O'Sullivan,Sergiu Clima,Albert Minj,Umberto Celano +12 more
- 01 Dec 2019
TL;DR: In this article, the imprint and its recovery of HfO 2-based FeFET is reported for the first time, using comprehensive electrical measurements on both FE capacitors and FEFETs, as well as simulation of charge trapping behavior.
31
Impact of Charge trapping on Imprint and its Recovery in HfO 2 based FeFET
Yusuke Higashi,L. Di Piazza,M. Suzuki,Dimitri Linten,J. Van Houdt,Nicolo Ronchi,Ben Kaczer,K. Banerjee,S. R. C. McMitchell,Barry O'Sullivan,Sergiu Clima,Albert Minj,Umberto Celano +12 more
- 01 Jan 2019
TL;DR: In this article, the imprint and its recovery of HfO 2-based FeFET is reported for the first time, using comprehensive electrical measurements on both FE capacitors and FEFETs, as well as simulation of charge trapping behavior.
28
Direct assessment of p-n junctions in single GaN nanowires by Kelvin probe force microscopy.
TL;DR: The results show that the shifts of the Fermi levels, and not the changes in surface band bending, are the most important effects under above band-gap illumination.