A memory controller receives memory access requests from a host terminal, the memory access requests from the host terminal including one or both of host read requests and host write requests. The memory controller generates memory access requests. Priorities are assigned to the memory access requests. The memory access requests are segregated to memory unit queues of at least one set of memory unit queues, the set of memory unit queues associated with a memory unit. Each memory access request is sent to the memory unit according to a priority and an assigned memory unit queue of the memory access request.

Enforcing system intentions during memory scheduling

A hybrid storage system is described having a mixture of different types of storage devices comprising rotational drives, flash devices, SDRAM, and SRAM. The rotational drives are used as the main storage, providing lowest cost per unit of storage memory. Flash memory is used as a higher-level cache for rotational drives. Methods for managing multiple levels of cache for this storage system is provided having a very fast Level 1 cache which consists of volatile memory (SRAM or SDRAM), and a non-volatile Level 2 cache using an array of flash devices. It describes a method of distributing the data across the rotational drives to make caching more efficient. It also describes efficient techniques for flushing data from L1 cache and L2 cache to the rotational drives, taking advantage of concurrent flash devices operations, concurrent rotational drive operations, and maximizing sequential access types in the rotational drives rather than random accesses which are relatively slower. Methods provided here may be extended for systems that have more than two cache levels.

Multi-leveled cache management in a hybrid storage system

In an example, selected portions of an uncore fabric of a system-on-a-chip (SoC) or other embedded system is divided into two independent pipelines. Each pipeline operates independently of the other pipeline, and each accesses only one-half of the system memory, such as even or odd addresses in an interleaved memory. The two pipelines do not reconverge until after memory values have been returned. However, the uncore fabric may still present a single, monolithic interface to requesting devices. This allows system designers to treat the uncore fabric as a “black box” without modifying existing designs. Each incoming address may be processed by a deterministic hash, assigned to one of the pipelines, processed through memory, and then passed to a credit return.

Mitigating traffic steering inefficiencies in distributed uncore fabric

In at least one embodiment, a controller of a non-volatile memory array including a plurality of subdivisions stores write data within the non-volatile memory array utilizing a plurality of block stripes of differing numbers of blocks, where all of the blocks within each block stripe are drawn from different ones of the plurality of subdivisions. The controller builds new block stripes for storing write data from blocks selected based on estimated remaining endurances of blocks in each of the plurality of subdivisions.

Wear leveling of a memory array

Systems, methods, and/or devices are used to implement variable bit encoding to improve device endurance and extend life of storage devices. In some embodiments, the method includes detecting a trigger condition with respect to one or more non-volatile memory portions (e.g., portions configured to store data encoded in a first encoding format) of a plurality of non-volatile memory portions of a storage device. In accordance with detecting the trigger condition, the method includes: determining a current and an estimated endurance metric for the plurality of non-volatile memory portions (e.g., corresponding to estimated endurance after reconfiguration of the one or more portions to store data encoded in a second encoding format), and in accordance with a determination that reconfiguration criteria are satisfied (e.g., the estimated endurance metric comprises an improvement over the current endurance metric), reconfiguring the one or more portions to store data encoded in the second encoding format.

Variable bit encoding per NAND flash cell to improve device endurance and extend life of flash-based storage devices

Some implementations include a method of managing a hosted non-volatile random-access memory (NVRAM) based storage subsystem that includes NVRAM devices. The method includes: receiving, at a device driver on the host computing device, write requests each requesting to write a respective unit of data to the NVRAM-based storage subsystem; categorizing the write requests into subgroups of write requests, where write requests within respective subgroups are mutually exclusive; ascertaining a load condition of each of several of the NVRAM devices of the NVRAM-based storage subsystem; identifying a target location on at least one NVRAM device to service a particular subgroup of write requests according to the ascertained load conditions of the NVRAM devices of the NVRAM-based storage subsystem; and servicing the particular subgroup of write requests by writing the corresponding units of data to the identified target location on the at least one NVRAM device of the NVRAM-based storage subsystem.

Managing the write performance of an asymmetric memory system

In one embodiment of the invention, a memory system includes non-volatile-memory-devices (NVMDs) coupled to memory channels to share busses and a memory controller coupled to the memory channels in communication between the plurality of NVMDs. Each NVMD independently executes a read, write, or erase operation at a time. The memory controller includes channel schedulers to schedule control and data transfers associated with the read, write, and erase operations on the memory channels; and high priority and low priority queues coupled to the channel schedulers. The channel schedulers prioritize operations waiting in the high priority queues over operations waiting in the low priority queues. The channel schedulers further prioritize read operations waiting in either the high priority queue or the low priority queue over write and erase operations waiting in each respective queue.

Methods for sustained read and write performance with non-volatile memory

A memory apparatus and methods are provided for preventing read errors on weak pages in a non-volatile memory system. In one example, a method includes identifying a weak page in a non-volatile memory device along a word line, wherein the weak page is partially written with at least some data; buffering data associated with the weak page to a weak page buffer that is coupled in communication with the non-volatile memory device; determining that an amount of data in the weak page buffer has reached a predetermined data level; and writing the data from the weak page buffer into the weak page along the word line in the non-volatile memory device.

Shutdowns and data recovery to avoid read errors weak pages in a non-volatile memory system

In one embodiment of the invention, a server is disclosed including a main printed circuit board; a plurality of processors mounted to the main printed circuit board; and a memory system accessible to the plurality of processors. The memory system includes a plurality of expansion sockets mounted to the printed circuit board, and a plurality of server memory cards removeably plugged into the plurality of expansion sockets. Each server memory card includes a master controller, a plurality of slave controllers, and a plurality of replaceable daughter-memory-cards with read-writeable non-volatile memory.

Memory server with read writeable non-volatile memory

Memory apparatus and methods thereof for preventing read errors on weak pages in a non-volatile memory system

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