A plasma processing apparatus wherein a layer structure consisting of plural layers formed in stack one upon another on a semiconductor wafer placed on the sample holder located in the process chamber, is etched with plasma generated in the process chamber by supplying high frequency power to the electrode disposed in the sample holder, the apparatus comprising a ring-shaped electrode disposed above the electrode and around the periphery of the top portion of the sample holder, an outer circumferential ring of dielectric material disposed above the ring-shaped electrode and opposite to the plasma, and a power source for supplying power at different values to the ring-shaped electrode depending on the sorts of layers of the layer structure.

Plasma Processing Apparatus

An apparatus to manufacture a semiconductor, in which distribution of process gases supplied to a reaction region in a reaction chamber is uniform, includes a gas supply nozzle to supply process gases to a semiconductor substrate in the reaction chamber, wherein the gas supply nozzle includes a first supply channel formed in a longitudinal direction, and first outlet channels formed at an outlet of the first supply channel such that the first outlet channels are inclined with respect to the direction of the first supply channel at a designated angle to diffuse the process gas supplied through the first supply channel.

Apparatus to manufacture semiconductor

The present invention generally provides apparatus and method for processing a substrate. Particularly, the present invention provides apparatus and methods to obtain a desired distribution of a process gas. One embodiment of the present invention provides an apparatus for processing a substrate comprising an injection nozzle having a first fluid path including a first inlet configured to receive a fluid input, and a plurality of first injection ports connected with the first inlet, wherein the plurality of first injection ports are configured to direct a fluid from the first inlet towards a first region of a process volume, and a second fluid path including a second inlet configured to receive a fluid input, and a plurality of second injection ports connected with the second inlet, wherein the second injection ports are configured to direct a fluid from the second inlet towards a second region of the process volume.

Dual zone gas injection nozzle

A gas chamber contains upper and lower chamber bodies forming a cavity, a heating chuck for a wafer, a remote gas source, and an exhaust unit. Gas is injected into the cavity through channels in an injector. Each channel has sections that are bent with respect to each other at a sufficient angle to substantially eliminate entering light rays entering the channel from exiting the channel without reflection. The channels have funnel-shaped nozzles at end points proximate to the chuck. The injector also has thermal expansion relief slots and small gaps between the injector and mating surfaces of the chamber and gas source. The temperature of the injector is controlled by a cooling liquid in cooling channels and electrical heaters in receptacles of the injector. The upper chamber body is funnel-shaped and curves downward at an end of the upper chamber body proximate to the chuck.

High strip rate downstream chamber

According to example embodiments, a vertical memory device includes a low resistance layer on a lower insulation layer, a channel layer on the low resistance layer, a plurality of vertical channels on the channel layer, and a plurality of gate lines. The vertical channels extend in a first direction that is perpendicular with respect to a top surface of the channel layer. The gate lines surround outer sidewalls of the vertical channels, and are stacked in the first direction and are spaced apart from each other.

Vertical memory devices

Provided is a high density plasma chemical vapor deposition (HDP-CVD) apparatus that includes a plurality of nozzles and/or injection pipes arranged for injecting a source gas mixture into a reaction chamber. The nozzles will each include an outlet region that includes a plurality of outlet channels or ports, the outlet channels are, in turn, configured to have a sufficiently small width and a sufficient length to suppress the formation of a plasma within the source gases passing through the respective nozzles. By suppressing the formation of a plasma within the nozzles, the thickness of deposits formed on the nozzles during the deposition processes can be maintained at a level generally no greater than deposits formed on the other chamber surfaces. This control of the deposit thickness allows the nozzles to be cleaned effectively by the same cleaning process applied to the chamber.

Plasma chemical vapor deposition apparatus having an improved nozzle configuration

Provided are improved nozzles suitable for injecting source gases or other gases into a plasma chamber in which the gas is conveyed along a single passage or channel to an outlet region at which point the single channel is divided into a plurality of outlet channels. The outlet channels are configured to suppress formation of a plasma within the nozzle itself, thereby reducing deposition and/or damage within the nozzle. The outlet channels may be defined through the use of one or more insertion members that can be inserted in the outlet region of the nozzle and may be used in combination with an outer pipe attached to a supply pipe for completing the nozzle assembly.

Nozzle and plasma apparatus incorporating the nozzle

A semiconductor device includes a plurality of insulation patterns and a plurality of gates alternately and repeatedly stacked on a substrate, a channel pattern extending through the gates in a first direction substantially perpendicular to a top surface of the substrate, a semiconductor pattern between the channel pattern and the substrate, and a conductive pattern between the channel pattern and the semiconductor pattern. The conductive pattern electrically connects the channel pattern to the semiconductor pattern. The conductive pattern contacts a bottom edge of the channel pattern and an upper surface of the semiconductor pattern.

Semiconductor devices including a conductive pattern contacting a channel pattern and methods of manufacturing the same

PROBLEM TO BE SOLVED: To provide a high-density plasma chemical vapor deposition system capable of minimizing the reaction of a source gas in a nozzle. SOLUTION: The high-density plasma chemical vapor deposition system 10 has a nozzle 300 for injecting at least two mixed source gases. Each of the nozzles 300 has one through hole 312 formed, and has a single part 330 to which the source gas is supplied from a gas supply part 500 and a composite part 340 that is extended from the single part 330 and has one or a plurality of through holes 322 formed. COPYRIGHT: (C)2005,JPO&NCIPI

Plasma chemical vapor deposition system, and nozzle and injection pipe used for plasma processing apparatus

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Plasma chemical vapor deposition apparatus having an improved nozzle configuration

Nozzle and plasma apparatus incorporating the nozzle

Semiconductor devices including a conductive pattern contacting a channel pattern and methods of manufacturing the same

Plasma chemical vapor deposition system, and nozzle and injection pipe used for plasma processing apparatus