A.Y. Bashin
4 Papers
14 Citations
A.Y. Bashin is an academic researcher. The author has contributed to research in topics: Irradiation & Space (mathematics). The author has an hindex of 2, co-authored 4 publications.
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Papers
Effect of emitter-base bias during pre-irradiation infrared illumination on the radiation response of bipolar transistors
V.S. Pershenkov,A.Y. Bashin,Gennady I. Zebrev,S.V. Avdeev,Vladimir V. Belyakov,V.N. Ulimov,V.V. Emelianov +6 more
TL;DR: In this article, the effect of pre-irradiation infrared (IR) illumination under reverse and forward emitter-base bias was investigated and shown to decrease during isochronal anneal and almost completely disappears at 100/spl deg/C.
8
Effect of aging on radiation response of bipolar transistors
V.S. Pershenkov,A.Y. Slesarev,A.V. Sogoyan,Vladimir V. Belyakov,V.B. Kekukh,A.Y. Bashin,D.V. Ivashin,V.S. Motchkine,V.N. Ulimov,V.V. Emelianov +9 more
TL;DR: In this article, a thermally activated aging process is investigated by experimental evaluation of the change in radiation response of test PNP and NPN transistors over a wide range of emitter-base bias conditions after preirradiation elevated-temperature stress and infrared illumination.
6
Use of preliminary ultraviolet and infrared illumination for diagnostics of MOS and bipolar devices radiation response
Viacheslav S. Pershenkov,S.V. Avdeev,A.S. Tsimbalov,M.N. Levin,Vladimir V. Belyakov,D.V. Ivashin,A.Y. Slesarev,A.Y. Bashin,Gennady I. Zebrev,Viktor N. Ulimov,V.V. Emelianov +10 more
TL;DR: It is shown that preliminary UV treatment increases a radiation-induced degradation of MOS threshold voltage and effect of preliminary IR illumination on BJT radiation response depends on emitter–base bias during the illumination.
1
MOSFET prediction in space environments taking into account high frequency switched bias response
I.N. Shvetzov-Shilovsky,V.S. Pershenkov,Vladimir V. Belyakov,Gennady I. Zebrev,A.Y. Bashin,D.V. Ivashin +5 more
- 10 Sep 2001
TL;DR: In this article, the buildup of interface states and oxide trapped charges were investigated in MOSFETs with ac gate voltage, and it was found that the time characteristics of transistor switching influence the rate of threshold voltage component shift.