The alloy Zn41Sb59 was synthesized by high-pressure techniques and its bulk amorphous nature at ambient conditions confirmed by X-ray powder diffraction and electron microscopy studies. Electrical resistivity, thermopower, and thermal conductivity of Zn41Sb59 were measured in a temperature range from 6 to 350 K. Zn41Sb59 is a semiconductor and resistivity data suggest an activation energy of about 0.25 eV above 250 K. The thermopower is positive and increases with increasing temperature. Room-temperature values for the resistivity and thermopower are 8 Ω cm and 300 μV/K, respectively. The temperature dependence of the thermal conductivity is characteristic for amorphous solids and continuously increasing from 0.08 W/(m K) at 6 K to 0.19 W/(m K) at room temperature. Comparison of the thermal conductivity of Zn41Sb59 with the thermal lattice conductivity of the crystalline thermoelectric material β-Zn4Sb3 reveals a remarkable resemblance, justifying the classification of the latter as a phonon-glass material.

Comparative Study of the Thermoelectric Properties of Amorphous Zn41Sb59 and Crystalline Zn4Sb3

The local structure of amorphous cadmium arsenide semiconducting films has been studied by differential anomalous X-ray scattering. Intensity measurements were carried out on two samples, containing 41 and 74 at.% As, in the vicinity of the absorption K edges of both constituents using synchrotron radiation. The computational procedure, similar to that proposed by Warren for an amorphous sample with more than one kind of atom, was applied to obtain the structural parameters from the experimental data. It has been found that atoms in the amorphous CdAs films remain almost tetrahedrally coordinated and that the investigated films are chemically ordered. The structural changes going from cadmium- to arsenic-rich composition have been revealed. The differential anomalous X-ray scattering technique proved to be effective, providing the evidence for the CdCd and AsAs near neighbour correlations in Cd 59 As 41 and Cd 26 As 74 , respectively. The simulations of the differential radial distribution functions have shown that for the amorphous film containing 41 at.% As the distorted tetrahedral structure, intermediate between the CdAs and Si III type structures, is adequate to account for the experimental data. At 74 at.% As, the atomic arrangement can be described satisfactorily by the structural model based on the tetragonal CdAs 2 structure. The structural parameters obtained from the present study and those previously derived using the extended X-ray absorption fine structure and conventional large angle X-ray scattering techniques are compared.

Differential anomalous X-ray scattering studies of amorphous Cd59As41 and Cd26As74

The structure of amorphous GaSb, produced by spontaneous transformation to the amorphous state of the metastable high pressure phase, is determined by neutron diffraction and compared to published results on a sample of the same composition but produced by sputtering. The structures are shown to be similar but not in complete agreement. We conclude that the local order is tetrahedral and related to the one in the low pressure crystalline GaSb-I. The packing of the tetrahedra is interpreted as a distorted ZnS blende type of network. A comparative analysis of measured static structure factors for a-GaSb with those for other amorphous materials with tetrahedral bonding indicates that the structure of amorphous GaSb has similarities with the structure of amorphous germanium and silicon.

Neutron scattering study of bulk amorphous GaSb

We present unique structural properties of amorphous semiconductors, for alloys like a-Ge x Sb 100− x , a-Ga x Te 100− x and for pure elements like a-C, a-Si, a-Ge. We observe, in all of them, a peak in the structure factor S ( K ) at scattering vectors K =2 k F , with 2 k F the diameter of the Fermi sphere (although free conducting electrons are absent) which is related to local spherical-periodic order in r -space. We discuss this structural feature as caused by an optimised resonance between the electronic and the static atomic structure (SAS) with subsequent consequences on structural stabilisation and electronic transport. In order to support the model we also present plasmon data.

On the structure of semiconducting amorphous systems

Temperature dependencies of the conductivity and thermopower of bulk amorphous semiconducting alloys Zn41Sb59 and Ga100-,SbZ with 47.5 < x < 55 were measured at 80 to 370 K and 120 to 370 K, respectively. The samples were prepared by solid state amorphization of the quenched high pressure phases occurring on heating at ambient pressure. The electrical properties of nonstoichiometric a-Zn41Sbsg are well described by the conventional Mott-Davis model. Those of both stoichiometric a-GaSb and nonstoichiometric a-Galoo- &ib, appear to be more unusual and require a modification of the model.

/pdf/znsb-and-gasb-bulk-amorphous-semiconductors-transport-1qa2y3y9bz.pdf

ZnSb and GaSb Bulk Amorphous Semiconductors: Transport Properties

The amorphous Zn41Sb59 alloy was studied by means of neutron diffraction. The sample was prepared by solid-state transformation of the quenched high-pressure phase during heating at atmospheric pressure. The data obtained were treated using the reverse Monte Carlo method. According to the radial distribution function obtained, the short-range order of the amorphous alloy was similar to that found for the equilibrium phase of the crystalline compound ZnSb at normal pressure. The effective coordination numbers for the amorphous alloy and the crystalline ZnSb were found to be 4.7 and 5, respectively.

Neutron diffraction study of bulk amorphous Zn41Sb59

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Neutron diffraction study of bulk amorphous Zn41Sb59