Novel semiconductor materials for the development of chemical sensors and biosensors: a review.

Recent progress in sensing nitrate, nitrite, phosphate, and ammonium in aquatic environment

Chemical sensors can be used to analyze a wide variety of environmental and biological gases and liquids and may need to be able to selectively detect a target analyte. Different methods, including gas chromatography, chemiluminescence, selected ion flow tube, and mass spectroscopy, have been used to measure biomarkers. These methods show variable results in terms of sensitivity for some applications and may not meet the requirements for a handheld biosensor. A promising sensing technology utilizes AlGaN/GaN high electron mobility transistors (HEMTs). HEMT structures have been developed for use in microwave power amplifiers due to their high two dimensional electron gas (2DEG) mobility and saturation velocity. The conducting 2DEG channel of AlGaN/GaN HEMTs is very close to the surface and extremely sensitive to adsorption of analytes. HEMT sensors can be used for detecting gases, ions, pH values, proteins, and DNA. In this paper we review recent progress on functionalizing the surface of HEMTs for specifi...

Electrical detection of biomaterials using AlGaN/GaN high electron mobility transistors

Real-time, high resolution, simultaneous measurement of multiple ionic species is challenging with existing chromatographic, spectrophotometric and potentiometric techniques Potentiometric ion sensors exhibit limitations in both resolution and selectivity Herein, we develop wafer scale graphene transistor technology for overcoming these limitations Large area graphene is an ideal material for high resolution ion sensitive field effect transistors (ISFETs), while simultaneously enabling facile fabrication as compared to conventional semiconductors We develop the ISFETs into an array and apply Nikolskii–Eisenman analysis to account for cross-sensitivity and thereby achieve high selectivity We experimentally demonstrate real-time, simultaneous concentration measurement of K+, Na+, $${{\rm{NH}}}_{4}^{+}$$, $${{\rm{NO}}}_{3}^{-}$$, $${{\rm{SO}}}_{4}^{2-}$$, $${{\rm{HPO}}}_{4}^{2-}$$ and Cl− with a resolution of $$\sim\! 2\times 1{0}^{-3}\,{\mathrm{log}}\,$$ concentration units The array achieves an accuracy of  ±005 log concentration Finally, we demonstrate real-time ion concentration measurement in an aquarium with lemnoideae lemna over three weeks, where mineral uptake by aquatic organisms can be observed during their growth The authors demonstrate wafer-scale, graphene-based ion sensitive field effect transistors arrays for simultaneous concentration measurement of K+, Na+, NH4+, NO3−, SO42−, HPO42− and Cl−, and use their technology for real-time ion concentration measurements in an aquarium with lemnoideae lemna over a period of three weeks

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Selective ion sensing with high resolution large area graphene field effect transistor arrays

AlGaN∕GaN high electron mobility transistors (HEMTs) were used to detect kidney injury molecule-1 (KIM-1), an important biomarker for early kidney injury detection. The gate region consisted of 5nm gold deposited onto the AlGaN surface. The gold was conjugated to highly specific KIM-1 antibodies through a self-assembled monolayer of thioglycolic acid. The HEMT source-drain current showed a clear dependence on the KIM-1 concentration in phosphate-buffered saline solution. The limit of detection was 1ng∕ml using a 20×50μm2 gate sensing area. This approach shows potential for both preclinical and clinical kidney injury diagnosis with accurate, rapid, noninvasive, and high throughput capabilities.

Electrical detection of kidney injury molecule-1 with AlGaN/GaN high electron mobility transistors

Chemically modified Field Effect Transistor (ChemFET) sensor for ammonium (NF 4+ ) ions was developed from AlGaN/GaN High Electron Mobility Transistor (HEMT) structures (NH + 4 -ChemHEMT). The sensor consists of a HEMT device with non-metallized gate, which was coated with a polyvinyl chloride (PVC) membrane enriched with ammonium ionophore (Nonactin). The AlGaN/GaN -CNH + 4 -ChemHEMT with gate width of 100 μm and gate length of 100 μm exhibited a constant sensitivity of 55.5 mV/pNH + 4 for NH + 4 concentration in the range from 10 -5 M to 10 -2 M. The NH + 4 concentration detection limit was 5.4 x 10 -6 M, which is approximately one order of magnitude lower compared to Si based insulator gate ChemFETs. The sensor exhibited also sufficiently long storage lifetime, indicating the strong adhesion of the PVC membrane to the GaN(0001) surface.

AlGaN/GaN high electron mobility transistor sensor sensitive to ammonium ions

Potassium selective chemically modified field effect transistors based on AlGaN/GaN two-dimensional electron gas heterostructures

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AlGaN/GaN high electron mobility transistor sensor sensitive to ammonium ions

Potassium selective chemically modified field effect transistors based on AlGaN/GaN two-dimensional electron gas heterostructures