A. V. Klochkov
Russian Academy of Sciences
8 Papers
34 Citations
A. V. Klochkov is an academic researcher from Russian Academy of Sciences. The author has contributed to research in topics: Light-emitting diode & Quantum tunnelling. The author has an hindex of 4, co-authored 8 publications.
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Papers
Nonuniformity of carrier injection and the degradation of blue LEDs
TL;DR: In this paper, the distribution of electroluminescence (EL) intensity over the area and in the course of time before and after the optical degradation of blue InGaN/GaN LEDs is studied.
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Optical properties of blue light-emitting diodes in the InGaN/GaN system at high current densities
N. I. Bochkareva,R. I. Gorbunov,A. V. Klochkov,Yu. S. Lelikov,I. A. Martynov,Yu. T. Rebane,A. S. Belov,Yu. G. Shreter +7 more
TL;DR: In this paper, the authors investigated the cause of the decrease in the emission efficiency at high current densities and high temperatures in blue InGaN/GaN-based light-emitting diodes and found that the linear increase in emission intensity with increasing injection current changes into a sublinear increase, resulting in a decrease in efficiency as the observed photon energy shifts from the mobility edge.
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Hopping transport in the space-charge region of p-n structures with InGaN/GaN QWs as a source of excess 1/f noise and efficiency droop in LEDs
N. I. Bochkareva,Alexander M. Ivanov,A. V. Klochkov,V. S. Kogotkov,Yu. T. Rebane,M. V. Virko,Yury Georgievich Shreter +6 more
TL;DR: In this article, it was shown that the emission efficiency and the 1/f noise level in light-emitting diodes with InGaN/GaN quantum wells correlate with how the differential resistance of a diode varies with increasing current.
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The effect of the transformation of point defects under Joule heating on efficiency of LEDs with InGaN/GaN quantum wells
TL;DR: In this paper, it was shown that a short-time Joule heating of the active region of light-emitting diodes with InGaN/GaN quantum wells up to 125°C at a current density of 150 A/cm2 leads to an increase in the quantum efficiency.
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The effects of interface states on the capacitance and electroluminescence efficiency of InGaN/GaN light-emitting diodes
N. I. Bochkareva,Evgeny Zhirnov,A. A. Efremov,Yu. T. Rebane,R. I. Gorbunov,A. V. Klochkov,D. A. Lavrinovich,Yu. G. Shreter +7 more
TL;DR: In this paper, the capacitance-voltage characteristics and external quantum efficiency of blue GaN light-emitting diodes (LEDs) with an InGaN quantum well have been investigated in the temperature range 77-300 K.
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