22 Papers
195 Citations
A. Tilke is an academic researcher from Ludwig Maximilian University of Munich. The author has contributed to research in topics: Silicon & Silicon on insulator. The author has an hindex of 13, co-authored 22 publications.
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Papers
Stable integration of isolated cell membrane patches in a nanomachined aperture
TL;DR: In this paper, a method for integrating an isolated cell membrane patch into a semiconductor device was presented, where the semiconductor is nanostructured for probing native cell membranes for scanning probe microscopy in situ.
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Stable integration of isolated cell membrane patches in a nanomachined aperture: a step towards a novel device for membrane physiology
TL;DR: The microscopic contact of a cell/semiconductor hybrid with nanostructured semiconductor is investigated with the aim of single channel recording of ion channels in cell membranes to overcome many limitations of the classical patch-clamp technique.
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Microstructured apertures in planar glass substrates for ion channel research.
Niels Fertig,Michael George,Michèle Klau,Christine Meyer,A. Tilke,Constanze Sobotta,Robert H. Blick,Jan C. Behrends +7 more
TL;DR: Ion-track etching techniques are used to produce micron-sized apertures into borosilicate and quartz-glass coverslips to be used for high resolution recording of single ion channels as well as for whole-cell current recordings from mammalian cell lines.
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Low-energy electron-beam lithography using calixarene
A. Tilke,M. Vogel,Friedrich C. Simmel,A. Kriele,Robert H. Blick,Heribert Lorenz,D. A. Wharam,Jörg P. Kotthaus +7 more
TL;DR: In this paper, the suitability of electron energies down to 2 keV with a writing resolution of about 10 nm was demonstrated and irradiation damage during the exposure of a high-mobility two-dimensional electron gas using calixarene plays no significant role in the low-energy regime.
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Nanomechanical resonators operating as charge detectors in the nonlinear regime
TL;DR: In this paper, the authors present measurements on nanomechanical resonators machined from Silicon-on-Insulator substrates, which are designed as freely suspended Au/Si beams of lengths on the order of 1 - 4 um and a thickness of 200 nm.
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