This article reviews the current status of spin dynamics in semiconductors which has achieved a lot of progress in the past years due to the fast growing field of semiconductor spintronics. The primary focus is the theoretical and experimental developments of spin relaxation and dephasing in both spin precession in time domain and spin diffusion and transport in spacial domain. A fully microscopic many-body investigation on spin dynamics based on the kinetic spin Bloch equation approach is reviewed comprehensively.

Spin dynamics in semiconductors

Generating, manipulating and detecting electron spin polarization and coherence at room temperature is at the heart of future spintronics and spin-based quantum information technology. Spin filtering, which is a key issue for spintronic applications, has been demonstrated by using ferromagnetic metals, diluted magnetic semiconductors, quantum point contacts, quantum dots, carbon nanotubes, multiferroics and so on. This filtering effect was so far restricted to a limited efficiency and primarily at low temperatures or under a magnetic field. Here, we provide direct and unambiguous experimental proof that an electron-spin-polarized defect, such as a Ga(i) self-interstitial in dilute nitride GaNAs, can effectively deplete conduction electrons with an opposite spin orientation and can thus turn the non-magnetic semiconductor into an efficient spin filter operating at room temperature and zero magnetic field. This work shows the potential of such defect-engineered, switchable spin filters as an attractive alternative to generate, amplify and detect electron spin polarization at room temperature without a magnetic material or external magnetic fields.

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Room-temperature defect-engineered spin filter based on a non-magnetic semiconductor.

We present a systematic theoretical study of spin-dependent recombination and its effect on optical orientation of photoelectron spins in semiconductors with deep paramagnetic centers. For this aim we generalize the Shockley-Read theory of recombination of electrons and holes through the deep centers with allowance for optically-induced spin polarization of free and bound electrons. Starting from consideration of defects with three charge states we turn to the two-charge-state model possessing nine parameters and show that it is compatible with available experimental data on undoped GaAsN alloys. In the weak- and strong-pumping limits, we derive simple analytic equations which are useful in prediction and interpretation of experimental results. Experimental and theoretical dependences of the spin-dependent recombination ratio and degree of photoluminescence circular polarization on the pumping intensity and the transverse magnetic field are compared and discussed.

https://iopscience.iop.org/article/10.1088/0953-8984/22/46/465804/pdf

Optical orientation and spin-dependent recombination in GaAsN alloys under continuous-wave pumping

Calculations of spin-injected vertical-cavity surface-emitting lasers (VCSELs) are presented using an efficient algorithm for solution of the steady-state rate equations in the spin-flip model. The effects of spin relaxation, birefringence, electron and photon lifetimes, linewidth factor, and the magnitude and ellipticity of the pumping are investigated. After a review of published values for spin relaxation rates in semiconductors of interest for VCSELs, the dependence of spin relaxation times in GaInNAs quantum wells on N content and well width is calculated for the Elliot-Yafet process. The results, which show good agreement with experiment, are used in simulations of spin-injected GaInNAs VCSELs to determine the dependence of polarization control on well width.

Parametric Analysis of Spin-Polarized VCSELs

We report on optical orientation experiments in undoped GaAsN epilayers and InGaAsN quantum wells (QW), showing that a strong electron spin polarisation can persist at room temperature. We demonstrate that the spin dynamics in these dilute nitride structures is governed by a spin-dependent recombination process of free conduction electrons on deep paramagnetic centres.

Electron spin dynamics in GaAsN and InGaAsN structures

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Electron spin dynamics in GaAsN and InGaAsN structures