A. Schafer
Forschungszentrum Jülich
31 Papers
131 Citations
A. Schafer is an academic researcher from Forschungszentrum Jülich. The author has contributed to research in topics: Subthreshold slope & Field-effect transistor. The author has an hindex of 11, co-authored 31 publications.
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Papers
Inverters With Strained Si Nanowire Complementary Tunnel Field-Effect Transistors
Lars Knoll,Qing-Tai Zhao,A. Nichau,Stefan Trellenkamp,S. Richter,A. Schafer,David Esseni,Luca Selmi,Konstantin Bourdelle,S. Mantl +9 more
TL;DR: In this article, the first uniaxially tensile strained Si (sSi) nanowire (NW) tunneling field effect transistors (TFETs) are fabricated.
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Demonstration of improved transient response of inverters with steep slope strained Si NW TFETs by reduction of TAT with pulsed I-V and NW scaling
Lars Knoll,Qing-Tai Zhao,A. Nichau,S. Richter,G. V. Luong,Stefan Trellenkamp,A. Schafer,Luca Selmi,Konstantin Bourdelle,S. Mantl +9 more
- 01 Dec 2013
TL;DR: In this paper, a gate all around strained Si (sSi) nanowire array TFET array with high ION (64μA/μm at VDD=10V) was presented.
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Line and Point Tunneling in Scaled Si/SiGe Heterostructure TFETs
M. Schmidt,A. Schafer,R. A. Minamisawa,Dan Buca,Stefan Trellenkamp,Jean-Michel Hartmann,Qing-Tai Zhao,Siegfried Mantl +7 more
TL;DR: In this article, the impact of gate length and channel orientation on the electrical performance of TFETs was investigated and the first experimental proof of line tunneling occurring in a TFET was presented.
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Unipolar behavior of asymmetrically doped strained Si0.5Ge0.5 tunneling field-effect transistors
M. Schmidt,R. A. Minamisawa,S. Richter,A. Schafer,Dan Buca,J.M. Hartmann,Qing-Tai Zhao,S. Mantl +7 more
TL;DR: In this article, the impact of the dopant concentration in the source and drain regions on the ambipolar behavior of band-to-band tunneling field effect transistors with compressively strained Si0.5Ge0.
Si tunneling transistors with high on-currents and slopes of 50 mV/dec using segregation doped NiSi2 tunnel junctions
Lars Knoll,M. Schmidt,Qing-Tai Zhao,Stefan Trellenkamp,A. Schafer,Konstantin Bourdelle,S. Mantl +6 more
TL;DR: In this article, a self-aligned process was developed to form the p-i-n TFETs which greatly simplifies their fabrication by tilted dopant implantation using the high-k/metal gate as a shadow mask and dopant segregation.
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