7 Papers
2 Citations
A. Ruangphanit is an academic researcher from Thailand National Science and Technology Development Agency. The author has contributed to research in topics: Threshold voltage & NMOS logic. The author has an hindex of 1, co-authored 7 publications.
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Papers
The effects of temperature and device demension of MOSFETs on the DC characteristics of CMOS inverter
A. Ruangphanit,Kunagone Kiddee,Amporn Poyai,Yothin Wongprasert,Surasak Niemcharoen,Rangson Muanghlua +5 more
- 16 May 2012
TL;DR: In this article, the temperature dependence of the MOSFET parameters as well as the small dimension effects on the dc characteristics of submicrometer CMOS inverters operated over the temperature range of 27 − 125 degree Celsius are presented.
5
Extraction of BSIM3v3 Junction Capacitance Model of NMOSFET in VLSI Devices,Circuits and Systems
A. Ruangphanit,R. Pedlub,Rangson Muanghlua +2 more
- 01 Jul 2018
TL;DR: In this paper, an extraction methodology and modeling of BSIM3v3 junction capacitance of NMOSFET in VLSI is proposed, which can lead to an improved accuracy on p-n junction capacivities.
1
Test chip design and parameter extraction of parasitic capacitance of MOSFET in VLSI
A. Ruangphanit,R. Pedlub,Rangson Muanghlua +2 more
- 01 Mar 2017
TL;DR: In this paper, the authors describe test ship design and parameter extraction of parasitic capacitance of MOSFET in VLSI, and the test structure for separating area and sidewall capacitance components of N+Psub junction and P+Nwell junction are used as testing devices.
1
Development a novel model of threshold voltage of NMOS with temperature dependence and narrow channel width
A. Ruangphanit,Amporn Poyai,Rangson Muanghlua,Surasak Niemcharoen,Wisut Titiroongruang +4 more
- 01 Jun 2016
TL;DR: In this article, a model of threshold voltage of NMOS with temperature dependence and narrow channel width was presented, which measured the threshold voltages were measured by the linear extrapolation methodology, and the results showed that the measured threshold voltage compared with the development threshold voltage model was low level error.
1
The Effect of Gamma Irradiation on Threshold Voltage and Channel Mobility Degradation of NMOS
Amonrat Kerdpradist,A. Ruangphanit,Wisut Titiroongruang,Rangson Muanghlua +3 more
- 01 Mar 2018
TL;DR: In this paper, the effect of gamma irradiation on threshold voltage, surface mobility and transconductance on N-channel MOSFET devices at a gate oxide thickness of 15 nanometers, which is fabricated at Thai Microelectronics Center by 0.8-micron CMOS technology.