A straightforward approach is introduced to determine electronic stopping powers of He ions in Si and SiC over a continuous range of energies. In transmission geometry, the energy loss of He ions in self-supporting stopping foils of Si and SiC is measured using a time-of-flight (TOF) set-up. The energy of individual ions prior to impingement on the foil is determined from its TOF data; the exit energy after the stopping foil is measured using a Si detector, for which every channel has been calibrated using the TOF data without the stopping foil present. The measured stopping powers demonstrate excellent repeatability of this experimental approach and good reliability as compared with previous data from the literature and theoretical predictions.

Stopping power measurements of He ions in Si and SiC by time-of-flight spectrometry

In the present paper, continuum fracture mechanics is used to analyze the Smart-Cut process, a recently established ion cut technology which enables highly efficient fabrication of various silicon-on-insulator (SOI) wafers of high uniformity in thickness. Using integral transform and Cauchy singular integral equation methods, the mode-I and mode-II stress intensity factors, energy release rate, and crack opening displacements are derived in order to examine several important fracture mechanisms involved in the Smart-Cut process. The effects of defect interaction and stiffening wafer on defect growth are investigated. The numerical results indicate that a stiffener/handle wafer can effectively prevent the donor wafer from blistering and exfoliation, but it slows down the defect growth by decreasing the magnitudes of SIF’s. Defect interaction also plays an important role in the splitting process of SOI wafers, but its contribution depends strongly on the size, interval and internal pressure of defects. Finally, an analytical formula is derived to estimate the implantation dose required for splitting a SOI wafer.

https://link.springer.com/content/pdf/10.1007%2Fs10409-008-0192-8.pdf

Fracture mechanics analysis on Smart-Cut® technology. Part 1: Effects of stiffening wafer and defect interaction

An investigation into the influence of implantation conditions (dose, energy, and target temperature) of He+ ions on the damage structure of GaAs (100) substrates was performed by HRXRD, scanning electron microscopy, and Nomarski microscopy. Blistering is shown to become apparent as characteristic features of isolines in RSMs. We propose that the formation of the defects yielding a characteristic XRDS is defined by the behavior of implanted atoms in the GaAs matrix, depending on two competing processes: (1) formation of the gas-filled bubbles; (2) diffusion of the He atoms from the bubbles toward the surface and deep into the GaAs substrate. We conclude that the gas-filled bubbles change the structure of the irradiated layer, resulting in the formation of strained crystalline areas of the GaAs matrix.

Influence of implantation conditions of He+ ions on the structure of a damaged layer in GaAs(001)

In Part 2 of the paper on the Smart-Cut process, the effects of bonding flaws characterized by the size and internal pressure before and after splitting are studied by using fracture mechanics models. It is found that the bonding flaws with large size are prone to cause severe deviation of defect growth, leading to a non-transferred area of thin layer when splitting. In a practical Smart-Cut process where the internal pressure of bonding flaws is very small, large interfacial defects always promote defect growth in the splitting process. Meanwhile, increasing the internal pressure of the bonding flaws decreases the defect growth and its deviation before splitting. The mechanism of relaxation of stiffener constraint is proposed to clarify the effect of bonding flaws. Moreover, the progress of the splitting process is analyzed when bonding flaws are present. After splitting, those bonding flaws with large size and high internal pressure are vulnerable for the blistering of the thin film during high-temperature annealing.

Fracture mechanics analysis on Smart-Cut ® technology. Part 2: Effect of bonding flaws

High fluence (>1017 H/cm2) ion implantation of H in GaAs is suitable for the ion cut process, and produces H bubbles under the surface which may cause blistering. By comparing the destructive depth profiling of these implants by secondary ion mass spectrometry (SIMS) with non-destructive profiling by elastic recoil detection analysis (ERD), we demonstrate that SIMS underestimates total H content by up to a factor of 2 due to undetected H escaping from bubbles during analysis. We also show that the depth of the maximum H concentration from SIMS can be in error by 20% due to large variations in the sputter rate through the profile.

On artefacts in the secondary ion mass spectrometry profiling of high fluence H + implants in GaAs

The influence of ion species on the ion-cut, or smart-cut© process in GaAs has been investigated in this paper. Semi-insulating GaAs, implanted with H2+, He+ and Ne+, were studied by Rutherford backscattering spectroscopy (RBS) in channelling mode, to investigate the lattice disorder produced by implanting different ion species. The RBS spectra show that surface dechannelling is enhanced where blisters are present. The samples were also studied by Nomarski microscopy and atomic force microscopy to investigate the effect of the ion species on the blistering process. It was found that the ion-cut process can be achieved at lower doses by using the implantation of He alone rather than H. Our results indicate that the implantation of Ne is not a suitable alternative to H or He implantation.

Characterising ion-cut in GaAs by Rutherford backscattering spectroscopy

The dependence of hydrogen flux and substrate temperature during implantation on the smart-cutprocess in GaAs have been investigated in this paper. The lattice disorder in the samples was studied by ion beam analysis. It was found that both the flux and the implant temperature are significant for the smart-cut process. As the flux increases, the degree of exfoliation and the mean blister size increases, while the number density of blisters falls, indicating that blister evo- lution is enhanced at high dose rates.

The influence of the ion implantation temperature and the dose rate on smart-cut© in GaAs

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Characterising ion-cut in GaAs by Rutherford backscattering spectroscopy

The influence of the ion implantation temperature and the dose rate on smart-cut© in GaAs