Direct wafer bonding associated to mechanical thinning down is a generic technology enabling the fabrication of new materials and structures. It is perfectly adapted to the transfer of virgin as well as partially or fully processed layers onto different supports. New generation of substrates are thus emerging, to answer to the evolution of requirements in microelectronics and microsystems. Moreover, new stacked structures have been achieved showing integrations of more and more functionalities and illustrating developments of 3D-integration.

Direct wafer bonding & thinning down a generic technology to perform new structures

Optical properties of nanocrystalline La 2 O 3 dielectric films deposited by radio frequency magnetron sputtering

The ubiquitous use of versatile smart devices fuels a rapid growth in spectral sensor technology. Ambient Light Sensors (ALS), with 3–6 spectral channels in the visible and near-infrared are the most common version today. Their architecture comprises a pixel and a filter atop. While the compliance of the pixel to CMOS technology is built-in, the compliance of the filter in terms of materials and of process parallelism is not obvious. The process demand discards the pixel-scale variable-thickness Fabry-Perot solution, notably, and rather points to single-step nanophotonic structures whose pattern is specific to each ALS pixel/channel. In this study, we provide a performance comparison between two such candidate filters, the resonant waveguide (RWG) rejection filter, and the hybrid Fabry Perot (FP) band-pass filter. The evaluation is carried out in terms of spectral response, tunability, angular and polarization tolerance, and noise sensitivity, assessing the collective ability of an ALS array to retrieve spectral information. Through this analysis from the photon to the system, we pave a methodological frame for engineers and manufacturers facing a variety of application choices and sensing capabilities. 

Resonant Waveguide vs Fabry-Perot Cavity: A Comparative Study for CMOS Spectral Sensor Technology

Transmission measurements of multilayer interference filters developed for a full integration on Complementary Metal Oxide Semiconductor chips

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Transmission measurements of multilayer interference filters developed for a full integration on Complementary Metal Oxide Semiconductor chips