After formation of a connection hole or before deposition of an insulator film, a semiconductor device is placed onto a cathode of a plasma generator. A surface of a metal silicide film such as a silicide of titanium is exposed to a plasma of a nitrogen-containing gas at 550 degrees centigrade or less. As a result of such processing, a barrier compound layer, composed of a compound of nitrogen, oxygen, metal and silicon, is formed at a near-surface region of the metal silicide film of the titanium silicide film. Thereafter, while forming a buried layer from material superior in step coverage such as an Al--Ti compound and an aluminum alloy, reaction between the metal silicide film and the buried layer in a later annealing treatment can be avoided without depositing a barrier metal such as a titanium nitride/nitride film in the connection hole. Accordingly, contact resistance, sheet resistance and junction leakage can be reduced and reliability can be improved.

Semiconductor device having improved lamination-structure reliability for buried layers, silicide films and metal films, and a method for forming the same

The transformation of C49 phase TiSi2 to the low resistivity C54 phase is necessary for many microelectronic applications. Here, we report on attempts to decrease this transformation temperature by low‐energy ion bombardment at elevated temperature. Ion irradiation was performed using a broad beam Kaufman ion source operated in N2 or Ar gas between 0.1 and 2 keV beam energy, with ion doses ranging from 2.0×1016 to 1.9×1018 ions/cm2, and sample temperatures from 480 °C to 735 °C. For comparison, room‐temperature Ar+ implantation at higher energy (105–210 keV) was performed with a dose of 1016 ions/cm2 with projected ranges within and beyond the TiSi2 layer thickness. Resistivity measurements as a function of temperature, x‐ray diffraction, and Rutherford backscattering spectrometry were used to determine the composition and phases. Results show that low‐energy ion bombardment does not promote the C49‐C54 transformation at the temperatures studied, while ion implantation actually raises the temperature for ...

Stability of C49 and C54 phases of TiSi2 under ion bombardment

We have investigated the effectiveness of thin tantalum layers as diffusion barriers to copper. Fifty nm Ta films were sputtered onto unpatterned single crystal Si wafers and overlaid with 100 nm Cu. Material reactions in these films were followed as a function of annealing temperature by in-situ resistance measurements, and characterized by by Rutherford Backscattering and cross-section TEM. The effect of the incorporation of nitrogen was explored by reactively depositing Ta(5 at.% N) and Ta2N. Pure Ta prevents Cu - silicon interaction to at least 600 °C. At higher temperatures, reaction of the Si substrate with Ta forms a planar TaSi2 layer. Cu rapidly penetrates to the Si substrate, forming Cu silicide precipitates at the TaSi2 - Si interface. A study performed on the Si/Ta(N)/Cu film had very similar results. Ta2N is an even more effective barrier to copper penetration, preventing Cu reaction with the substrate for temperatures up to at least 700 °C.

Tantalum and Tantalum Nitride as Diffusion Barriers Between Copper and Silicon

The titanium nitride (TiN) formation technology described here uses nitrogen plasma bias treatment to form self-aligned TiN only on the diffused layer from titanium silicide ( TiSi2) prepared by selective chemical vapor deposition (CVD). The nitriding was performed using magnetron sputtering equipment with an rf plasma source. Auger electron spectroscopy (AES), X-ray photoelectron spectroscopy (XPS), and etching in 1% HF were used to characterize the samples. The contacts fabricated with the Al-2%Si/TiN/TiSi2/Si barrier technology exhibit low resistivities of about 10-7 Ωcm2. No excessive leakage of the 0.2-µm shallow junctions was observed even after thermally stressing the samples at 500°C for 30 min.

Self-aligned TiN formation by N2 plasma bias treatment of TiSi2 deposited by selective chemical vapor deposition

The novel aminopyridinato Mn(II) compound has been synthesized and characterized by elemental analysis and X-ray diffraction It was easily obtained through a conventional salt-elimination reaction Thermal properties, including stability, volatility, transport behavior and vapor pressure, were evaluated by thermogravimetric analysis (TGA) to confirm that it is suitable for the CVD procedure Deposition was accomplished in a hot-wall CVD reactor, verifying its ability to act as a CVD precursor for the fabrication of manganese containing films

An aminopyridinato Mn(II) compound as a novel CVD precursor for manganese-containing films

The Interfacial reactions between Al and RuO2, MoOx and WNx diffusion barriers on Si (100) wafers have been studied. The diffusion barrier structures were analyzed before and after various heat treatments using Auger electron spectroscopy (AES) and cross-sectional transmission electron microscopy (XTEM). Al was found to reduce the oxides of both Ru and Mo. A 100 A thick Al2O3 layer developed between the Al and the RuO2 films during annealing at 500°C for 30 minutes. The formation of interfacial Al2O3 efficiently prevents Al penetration but may cause a too high contact resistance for applications in contact structures of microelectronic devices. The WNx barrier was stable after annealing at 600°C for 30 minutes, if the film was exposed to air prior to Al deposition. If, instead, the Al was deposited in situ, the structure failed after annealing at 500°C due to a reaction between Al and W giving WAl12. A thin Al2O3 layer was detected between the Al and the WNx films of the air exposed sample. This layer had the effect of retarding the Al–W reaction and thereby raised the failure temperature of the barrier by at least 100°C.

Interfacial reactions between Al and RuO2, MoOx and WNx diffusion barriers on Si

A low‐energy nitrogen ion beam has been used to transform part of a TiSi2 layer on Si to TiN. This process, in conjunction with a self‐aligned TiSi2 process, forms a self‐aligned TiN barrier layer. The nitriding was performed using a broad beam Kaufman ion source operated in N2 at 300‐eV beam energy. Various substrate temperatures and N2 ion doses were evaluated. Auger electron spectroscopy, cross‐sectional transmission electron microscopy, and etching in HF were used to characterize the samples. The results show that the nitrided surface layer grows in thickness with substrate temperature and exposure time to the ion beam, and that an equilibrium thickness can be reached. A comparison with films produced by conventional annealing in NH3 shows that superior film properties can be achieved by ion beam nitriding at temperatures below 500 °C.

TiN formed by ion beam nitriding of TiSi2

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Interfacial reactions between Al and RuO2, MoOx and WNx diffusion barriers on Si

TiN formed by ion beam nitriding of TiSi2