Tin oxide (SnO 2 ) thin films were grown on Si (1 0 0) substrates using pulsed laser deposition (PLD) in O 2 gas ambient (10 Pa) and at different substrate temperatures (RT, 150, 300 and 400 °C). The influence of the substrate temperature on the structural and morphological properties of the films was investigated using X-ray diffraction (XRD), atomic force microscopy (AFM) and scanning electron microscopy (SEM). XRD measurements showed that the almost amorphous microstructure transformed into a polycrystalline SnO 2 phase. The film deposited at 400 °C has the best crystalline properties, i.e. optimum growth conditions. However, the film grown at 300 °C has minimum average root mean square (RMS) roughness of 3.1 nm with average grain size of 6.958 nm. The thickness of the thin films determined by the ellipsometer data is also presented and discussed.

Effects of deposition temperature on the structural and morphological properties of SnO2 films fabricated by pulsed laser deposition

The formation of a columnar structure, different expansion directions of the luminous (monomers) and obscure (droplets) plume species, and gradual deflection of the luminous plume are found to be interrelated in special experiments on pulsed laser deposition of Si The obscure species always expands in the direction of incidence, which leads to a characteristic skewed angular distribution of the deposition rate These observations are explained by the change of the microscopic mechanism of laser ablation from monomer evaporation at low local fluences to phase explosion at higher local fluences

Investigation of liquid droplets, plume deflection, and a columnar structure in laser ablation of silicon

High quality doped zinc oxide and mixed transition metal spinel oxide films have been deposited by means of sputter deposition from metal and metal oxide targets, and by spin casting from aqueous or alcoholic precursor solutions. Deposition conditions and post-deposition processing are found to alter cation oxidation states and their distributions in both oxide materials resulting in marked changes to both optical transmission and electrical response. For ZnO, partial reduction of the neat or doped material by hydrogen treatment of the heated film or by electrochemical processing renders the oxide n-type conducting. Continued reduction was found to diminish conductivity. In contrast, oxidation of the infrared transparent p-type spinel conductors typified by NiCo2O4 was found to increase conductivity. The disparate behavior of these two materials is caused, in part, by the sign of the charge carrier and by the existence of two different charge transport mechanisms that are identified as free carrier conduction and polaron hopping. While much work has been reported concerning structure/property relationships in the free carrier conducting oxides, there is a significantly smaller body of information on transparent polaron conductors. In this paper, we identify key parameters that promote conductivity in mixed metal spinel oxides and compare their behavior with that of the free carrier TCO’s.

Cation defects and conductivity in transparent oxides

Pulsed laser deposition method was used to prepare Bi 2 Te 3 thermoelectric thin films on a soda lime glass substrate at room temperature. Surface morphology of Bi 2 Te 3 thin films was studied by AFM (atomic force microscopy) images. The influence of thermal annealing in vacuum condition on microstructure and surface morphology of films was investigated in wide range of temperature. The results demonstrate that annealing induces a transition from amorphous to polycrystalline structures and increases electrical conductivity. X-ray diffraction analysis proves that the film annealed at 300 °C for 120 min appears in large grain size polycrystalline structure but film annealed at 400 °C in the same condition has a preformed crystal growth texture in (006) direction.

Pulsed laser deposition of bismuth telluride thin film and annealing effects

The influence of the adsorbed gases on the photoelectron performance of Mg thin film-based photocathodes was investigated. Mg thin films were deposited on Silicon and Copper substrates by pulsed laser ablation technique. The samples deposited on Silicon substrate were used to deduce the morphology, the structure and the thickness by using different diagnostic techniques. On the contrary, the samples deposited on Copper substrate were tested as photocathodes in a DC photodiode cell. The quantum efficiency of the Mg photocathodes was systematically improved by laser cleaning treatments, which appears to be necessary before any use of a metallic photocathode. The role of the hydrogen and oxygen absorption process on the emission properties is presented and discussed.

The role of the adsorbed gases on the photoelectron performance of Mg-based photocathodes

The conventional configuration (substrate parallel and frontal to the target surface) of the pulsed laser ablation deposition technique has been modified for improving the film uniformity with acceptable deposition rates, leading to the ‘dynamic deposition configuration’. The novelty of this arrangement is the ability to place by computer-control the substrate synchronously in front of the plume axis compensating the plume deflection effect. The new geometrical configuration was used to deposit films of Ti, Al and Cu. All the deposited films exhibited both high thickness uniformity and remarkable deposition rates. Initial results of the experiments are explained and compared with the results obtained in the conventional configuration, in otherwise similar experimental conditions.

The pulsed laser ablation deposition technique: a new deposition configuration for the synthesis of uniform films

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The pulsed laser ablation deposition technique: a new deposition configuration for the synthesis of uniform films