Structural, optical and photocatalysis properties of sol–gel deposited Al-doped ZnO thin films

Structural, optical and thermoelectric properties of Al-doped ZnO thin films prepared by spray pyrolysis

Al doped nanostructured zinc oxide thin films (thickness, 165 ± 5 nm) on silica glass were prepared from zinc acetate based solutions of varying dopant content (0 to 10 at% with respect to Zn). X-ray diffraction confirmed the presence of nanocrystalline hexagonal ZnO. On increasing the doping level, we observed a change in ZnO morphology (spherical, hexagon and plate-shaped) under field emission scanning and transmission electron microscopes and a gradual decrease of ZnO crystallite size (14.0 to ∼10 nm) vis-a-vis an enhancement of direct band gap energy of the films. Root mean square film surface roughness and chemical state of elements were studied by atomic force microscopy and X-ray photoelectron spectroscopy respectively. In addition to common intrinsic defects in ZnO, a defect (designated as D˙ZA, appearing as a paramagnetic singly negatively charged oxygen vacancy) was identified up to 4% doping from the appearance of photoluminescence emission at 398 nm and measurement of paramagnetic property of the films. Film photocatalytic activity towards Rhodamine 6G dye decomposition was performed under UV (254 nm) irradiation and the film with 4% doping (A4ZO) showed the highest value of first order decomposition rate constant. On increasing Al content, the trend of change of defect concentration (oxygen vacancies) analyzed by Raman spectra was found to be identical with the dye photodecomposition activity (PA) of the films. A major role of DZA˙ towards the PA was explored under visible light. We proposed the reaction mechanism of PA based on the experimental results. The A4ZO would be expected to decompose micro-organisms under visible light.

Influence of Al doping on microstructural, optical and photocatalytic properties of sol–gel based nanostructured zinc oxide films on glass

The growth of cobalt-doped nanostructured CuO thin films using the successive ionic layer adsorption and reaction (SILAR) method is presented. It is found that Co doping considerably influences the structural (X-ray diffraction (XRD)), morphological (finite-element–scanning electron microscopy (FESEM)), and optical (ultraviolet/visible (UV/vis.) and Raman) properties of the films. XRD experiments evidence that the crystallite size of the films decreased with increasing Co doping. FESEM images reveal that the grain size of the nanostructures decreased with increasing doping concentration. By UV/vis. analysis, it is found that Co doping has a decreasing effect on band gap energy. The broadening and downshift of the Raman peaks are mainly attributed to the quantum confinement effect of CuO nanostructures.

Effect of Cobalt Doping on Nanostructured CuO Thin Films

The effect of a high magnetic field applied during oxidation on the structure, optical transmittance, resistivity, and magnetism of cobalt (Co)-doped zinc oxide (ZnO) thin films prepared by oxidizing evaporated Zn/Co bilayer thin films in open air was studied. The relationship between the structure and properties of films oxidized with and without an applied magnetic field was analyzed. The results show that the high magnetic field obviously changed the structure and properties of the Co-doped ZnO films. The Lorentz force of the high magnetic field suppressed the oxidation growth on nanowhiskers. As a result, ZnO nanowires were formed without a magnetic field, whereas polyhedral particles formed under a 6 T magnetic field. This morphology variation from dendrite to polyhedron caused the transmittance below 1,200 nm of the film oxidized under a magnetic field of 6 T to be much lower than that of the film oxidized without a magnetic field. X-ray photoemission spectroscopy indicated that the high magnetic field suppressed Co substitution in the ZnO lattice, increased the concentration of oxygen vacancies, and changed the chemical state of Co. The increased concentration of oxygen vacancies affected the temperature dependence of the resistivity of the film oxidized under a magnetic field of 6 T compared with that of the film oxidized without a magnetic field. The changes of oxygen vacancy concentration and Co state caused by the application of the high magnetic field also increase the ferromagnetism of the film at room temperature. All of these results indicate that a high magnetic field is an effective tool to modify the structure and properties of ZnO thin films.

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Structure and properties of Co-doped ZnO films prepared by thermal oxidization under a high magnetic field

Structural and optical characterization of Al-doped ZnO films prepared by thermal oxidation of evaporated Zn/Al multilayered films

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Structural and optical characterization of Al-doped ZnO films prepared by thermal oxidation of evaporated Zn/Al multilayered films