A. P. Evseev
Moscow State University
25 Papers
35 Citations
A. P. Evseev is an academic researcher from Moscow State University. The author has contributed to research in topics: Irradiation & Fluence. The author has an hindex of 4, co-authored 16 publications.
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Papers
Evolution of the multi-walled carbon nanotubes structure with increasing fluence of He ion irradiation
K. D. Kushkina,Andrey A. Shemukhin,E. A. Vorobyeva,Kirill A. Bukunov,A. P. Evseev,A. A. Tatarintsev,Konstantin I. Maslakov,N.G. Chechenin,V. S. Chernysh +8 more
TL;DR: In this article, the effects of ion irradiation on the structural properties of multi-walled carbon nanotubes (MWCNTs) were investigated and quantitatively analyzed using deconvoluted spectral components, together with the XPS and SEM data.
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MWCNT-based surfaces with tunable wettability obtained by He+ ion irradiation
A. P. Evseev,E. A. Vorobyeva,Yu. V. Balakshin,K. D. Kushkina,A. V. Stepanov,V.S. Сhernysh,N.G. Chechenin,Andrey A. Shemukhin +7 more
TL;DR: In this paper, a study of He+ ion irradiation influence on the wettability of the multi-walled carbon nanotubes is presented, and the formation of cross-links between the layers of carbon nano-tubes under ion irradiated was demonstrated by the molecular dynamics simulation.
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Features of Defect Formation in Nanostructured Silicon under Ion Irradiation
TL;DR: In this paper, the Raman spectra of nanostructured silicon is analyzed and the size of nanocrystals in the structure of porous silicon at different irradiation fluences is estimated.
10
The Influence of Xenon and Argon Ion Irradiation Parameters on Defect Formation in Silicon
TL;DR: In this paper, the influence of irradiation on the destruction of the silicon structure was studied using Rutherford backscattering combined with channeling and Raman scattering (RS), and the stages of silicon crystal structure destruction based on RBS and RS for different irradiation fluences were demonstrated.
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The parameter influence of ion irradiation on the distribution profile of the defect in silicon films
TL;DR: In this paper, the effect of fluence and target temperature on defect formation in silicon films and bulk silicon samples was investigated, and it was shown that the disordering of silicon films under the action of ion beam is stronger than the bulk silicon.
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