Oxidation kinetics of thin films of titanium, vanadium and chromium in the temperature range 310–630 °C have been studied using backscattering spectrometry and X-ray diffraction. The growing oxides are Cr 2 O 3 and TiO 2 for the oxidation of chromium and titanium films respectively. In the case of vanadium films the simultaneous growth of two oxides is assumed with compositions close to V 2 O 5 and V 6 O 13 . In the region studied, the growth of the oxides has been found to obey various growth rate laws. Cr 2 O 3 and the vanadium oxides grow parabolically with activation energies of 1.2 eV, whereas TiO 2 grows linearly with an activation energy of 2.0 eV. For chromium and titanium an initial fast oxidation is observed. Implanted xenon markers show that the oxide layer on vanadium films grows by diffusion of oxygen species in the oxide layer. The growth of the chromium oxide occurs almost entirely at the surface and is controlled by the motion of chromium species in the oxide. TiO 2 grows both at the surface and at the oxide-titanium interface.

Kinetics and mechanism of oxide formation on titanium, vanadium and chromium thin films

Comparison of the diffusion barrier properties of tungsten films prepared by hydrogen and silicon reduction of tungsten hexafluoride

The formation of Pt silicides in the presence of Al is studied using Al/Pt/Si structures with different layer thicknesses of Al. Both the Pt‐Si and Pt‐Al reactions take place simultaneously, starting around 200 °C, with the formation of PtSi and PtAl2 completed at 400 °C. With an equal layer thickness for all three layers, the two alloys formed stay in contact with each other in a stable form up to about 500 °C. With a layer thickness of Al twice or more that of Pt and Si, the PtSi layer is completely converted to PtAl2 at 450 °C. The released Si from such a reaction is mostly located under the PtAl2 formed. The relation between these results and the unstable PtSi/Al contact in devices is discussed.

Formation of PtSi in the presence of Al

The formation of PtSi is studied in the presence of W and Al using the Al/W/Pt/Si structure, with 1000‐A W acting as the barrier layer. The PtSi layer formed stays intact at 400 °C, starts to react with Al around 450 °C, and is completely converted to PtAl2 at 500 °C, with the released Si migrating to the surface. In contrast, using the W/Pt/Si structure without an Al layer, the PtSi formed remains little changed up to about 600 °C. The W‐Pt interface of the binary W/Pt structure shows no interaction up to at least 600 °C. The results are compared with those using the Al/Pt/Si structure, and their relation to contact metallurgies is discussed.

Formation of PtSi in the presence of W and Al

Effect of VO barriers in CrSiO/VO/Al thin film system

Schottky‐barrier diodes have been fabricated by evaporation of Pt on Si substrates followed by annealing at 500 °C to yield PtSi. Then V and Al were evaporated. The amount of oxygen intentionally incorporated in the V film during deposition was varied and the resulting effect on the diffusion barrier action of the vanadium film has been studied by I‐V and C‐V measurements of the diodes and by backscattering spectrometry of simultaneously prepared test samples. It is found that for V films with low oxygen concentrations annealing in the range 400–600 °C leads to the formation of VAl3 and subsequent barrier height change. For vanadium films containing 50‐at. % oxygen there is no observable reaction between V and Al and the barrier height is preserved for annealing between 400 and 600 °C.

Electrical and metallurgical investigations of the metallization system: Si/PtSi/V/Al

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Electrical and metallurgical investigations of the metallization system: Si/PtSi/V/Al