InAs quantum dots in a InGaAs matrix grown on an InP substrate by molecular-beam epitaxy are employed as the active region of an injection laser. Lasing via quantum-dot states is observed in the temperature range 77–200 K. At the lowest threshold current density 11 A/cm2 the radiation wavelength is equal to 1.894 µm (77 K).

Investigation of the device characteristics of a low-threshold quantum-dot laser emitting at 1.9 µm

We report on the selective area growth of InAs quantum dots on GaAs by ultraviolet (UV) laser stimulated organometallic vapor phase epitaxy. At the low substrate temperature of 435 °C, exposure to a 248.2 nm continuous wave laser beam enhances the InAs growth rate by approximately 30%, causing the transition from two-dimensional (2D) to 3D growth mode to occur in the laser stimulated region only. Photoluminescence spectra from the UV laser stimulated growth region show both wetting layer and quantum dot luminescence, whereas only the wetting layer peak is present in the spectra from the dark grown regions. A photoluminescence map shows good spatial agreement between the region exhibiting quantum dot luminescence and the UV stimulated spot size. Since no quantum dot peak shifts are detected, but the luminescence intensity increases towards the center of the region stimulated with the Gaussian UV beam, we conclude that the island density rather than island size distribution is influenced by the UV intensity.

Laser stimulated selective area growth of quantum dots

Quantum dot (QD) semiconductor heterostructures for device applications are currently synthesized using the effect of spontaneous transformation of the growth surface at the initial stage of heteroepitaxy of lattice-mismatched layers. When a certain critical layer thickness is reached, the planar growth surface is transformed into an array of nanoscale islands, as was first demonstrated for an InAs/GaAs system. For various device applications, it is desirable to control the shape and size of individual QDs. This is achieved by variation of the effective thickness of the deposited InAs layer, deposition of several QD layers, the use of various matrix materials and a metamorphic buffer layer, and the addition of a small amount of nitrogen into QDs and the matrix material.

Quantum dot structures: Fabrication technology and control of parameters

Injection heterolasers based on quantum dots grown by molecular-beam epitaxy have been investigated. It is shown that the room-temperature threshold current density can be lowered to 15 A/cm2 by decreasing the nonradiative recombination and increasing the degree of carrier localization. The density of states in structures with vertically coupled quantum dots was investigated by the electroabsorption method.

Quantum-dot lasers: Principal components of the threshold current density

Optical switches and modulators are essential elements in lightwave systems for communications, spectroscopy and instrumentation. To fully exploit the potential of fibreoptic communications, these components must provide faster transmission rates and higher band widths. But one of the most important problem for these devices is integration with active optoelectronic devices into integrated circuits. Optical waveguide switches integrated with transistor drivers and photodetectors and interferometric modulators integrated with laser diodes have been demonstrated recently. The potential for lower price is monolithic integration on the base of semiconductor materials, where the added components will be defined by photolithography.

Optical Switches and Modulators for Integrated Optoelectronic Systems

Vertically coupled InAs quantum dots have been synthesized by MBE through successive deposition of InAs dot sheets and thin GaAs spacers. The energy of ground state transition in PL spectra has been found to depend on a number of dot sheets and the spacer width. Injection laser based on vertically coupled quantum dots demonstrated lasing via the ground state of quantum dots in the entire 80K-300K temperature range. Lower threshold current density and wider range of the thermal stability of threshold current density as compared to the single sheet quantum dot laser have been observed.

https://www.cambridge.org/core/services/aop-cambridge-core/content/view/S1946427400193558

Formation of Stacked Self-Assembled InAs Quantum Dots in GaAs Matrix for Laser Applications

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Formation of Stacked Self-Assembled InAs Quantum Dots in GaAs Matrix for Laser Applications