A novel approach for the readout of a TPC at the future linear collider is to use a CMOS pixel detector combined with some kind of gas gain grid. A first test using the photon counting chip Medipix2 with GEM or Micromegas demonstrated the feasibility of such an approach. Although this experiment demonstrated that single primary electrons could be detected the chip did not provide information on the arrival time of the electron in the sensitive gas volume nor did it give any indication of the quantity of charge detected. The Timepix chip uses an external clock with a frequency of up to 100 MHz as a time reference. Each pixel contains a preamplifier, a discriminator with hysteresis and 4-bit DAC for threshold adjustment, synchronization logic and a 14-bit counter with overflow control. Moreover, each pixel can be independently configured in one of four different modes: masked mode: pixel is off, counting mode: 1-count for each signal over threshold, TOT mode: the counter is incremented continuously as long as the signal is above threshold, and arrival time mode: the counter is incremented continuously from the time the first hit arrives until the end of the shutter. The chip resembles very much the Medipix2 chip physically and can be readout using slightly modified versions of the various existing systems. This paper presents the main features of the new design, electrical measurements and some first images.

Timepix, a 65k programmable pixel readout chip for arrival time, energy and/or photon counting measurements

The Medipix3 chips have been designed to permit spectroscopic imaging in highly segmented hybrid pixel detectors. Spectral degradation due to charge sharing in the sensor has been addressed by means of an architecture in which adjacent pixels communicate in the analog and digital domains on an event-by-event basis to reconstruct the deposited charge in a neighbourhood prior to the assignation of the hit to a single pixel. The Medipix3RX chip architecture is presented. The first results for the characterization of the chip with 300 μm thick Si sensors are given. ~ 72e− r.m.s. noise and ~ 40e− r.m.s. of threshold dispersion after chip equalization have been measured in Single Pixel Mode of operation. The homogeneity of the image in Charge Summing mode is comparable to the Single Pixel Mode image. This demonstrates both modes are suitable for X-ray imaging applications.

/pdf/the-medipix3rx-a-high-resolution-zero-dead-time-pixel-tpmlv2e7nw.pdf

The Medipix3RX: a high resolution, zero dead-time pixel detector readout chip allowing spectroscopic imaging

A single Photon Counting pixel detector readout Chip (PCC) has been derived from previous work in the CERN RD19 collaboration for particle physics tracking devices, recently developed for high energy physics experiments. The readout chip is a 64 x 64 matrix of identical 170 {micro}m x 170 {micro}m cells. It is to be bump-bonded to an equally segmented 1 cm{sup 2} matrix of semiconductor sensors, e.g. Si or GaAs. Each readout cell comprises a preamplifier, a discriminator and a 15-bit counter. The input noise is 170 e{sup {minus}} rms. At the lowest nominal threshold of 1,400 e{sup {minus}} (5.1 keV in Si) the cells exhibit a threshold distribution with a spread before adjustment of 350 e{sup {minus}} rms. Each cell has a 5-bit register which allows masking, test-enable and 3-bit individual threshold adjust. After adjustment the threshold spread is reduced to 80 e{sup {minus}} rms. Absolute calibration of the electrically measured equivalent charge can be done once the readout chip is bump-bonded to a detector.

A Readout Chip for a 64 x 64 Pixel Matrix with 15-bit Single Photon Counting*

Semiconductor detector readout chips with pulse processing electronics have made possible spectroscopic X-ray imaging, bringing an improvement in the overall image quality and, in the case of medical imaging, a reduction in the X-ray dose delivered to the patient. In this contribution we review the state of the art in semiconductor-detector readout ASICs for spectroscopic X-ray imaging with emphasis on hybrid pixel detector technology. We discuss how some of the key challenges of the technology (such as dealing with high fluxes, maintaining spectral fidelity, power consumption density) are addressed by the various ASICs. In order to understand the fundamental limits of the technology, the physics of the interaction of radiation with the semiconductor detector and the process of signal induction in the input electrodes of the readout circuit are described. Simulations of the process of signal induction are presented that reveal the importance of making use of the small pixel effect to minimize the impact of the slow motion of holes and hole trapping in the induced signal in high-Z sensor materials. This can contribute to preserve fidelity in the measured spectrum with relatively short values of the shaper peaking time. Simulations also show, on the other hand, the distortion in the energy spectrum due to charge sharing and fluorescence photons when the pixel pitch is decreased. However, using recent measurements from the Medipix3 ASIC, we demonstrate that the spectroscopic information contained in the incoming photon beam can be recovered by the implementation in hardware of an algorithm whereby the signal from a single photon is reconstructed and allocated to the pixel with the largest deposition.

/pdf/review-of-hybrid-pixel-detector-readout-asics-for-r01xi789oa.pdf

Review of hybrid pixel detector readout ASICs for spectroscopic X-ray imaging

A new pixel readout prototype has been developed at CERN for high-energy physics applications. This full mixed mode circuit has been implemented in a commercial 0.5 μm CMOS technology. Its radiation tolerance has been enhanced by designing all NMOS transistors in enclosed geometry and introducing guardrings wherever necessary. The technique is explained and its effectiveness demonstrated on various irradiation measurements on individual transistors and on the prototype. Circuit performance started to degrade only after a total dose of 600 krad–1.7 Mrad depending on the type of radiation. 10 keV X-rays, 60 Co gamma-rays, 6.5 MeV protons, and minimum ionizing particles were used. Implications of this layout approach on the circuit design and perspectives for even deeper submicron technologies are discussed.

Layout techniques to enhance the radiation tolerance of standard CMOS technologies demonstrated on a pixel detector readout chip

An asynchronous version of a binary pixel readabout circuit has been implemented in an array with 16 columns at 500 mu m pitch and 63 rows at 75 mu m pitch. This readabout chip has been bonded with solder bumps to a silicon detector with matching pixel elements. Event information in a pixel can be strobed into a local memory by a trigger signal and subsequently read out. Without a strobe the information is continuously cleared. The complete hybrid detector has been successfully tested with ionizing particles from a radioactive source. Three such devices have been put in the CERN heavy-ion experiment WA94 in the Omega spectrometer, where they recorded particle tracks from high-multiplicity /sup 32/S interactions. Preliminary data indicate a noise of approximately 60 e/sup -/ and a threshold spread of approximately 500 e/sup -/. The timing characteristics are adequate for a fixed-target experiment. >

/pdf/a-1006-element-hybrid-silicon-pixel-detector-with-strobed-1bc883bvjb.pdf

A 1006 element hybrid silicon pixel detector with strobed binary output

Design and performance of the Omega-ion hybrid silicon pixel detector

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A 1006 element hybrid silicon pixel detector with strobed binary output

Design and performance of the Omega-ion hybrid silicon pixel detector