A. Modelli
Micron Technology
5 Papers
97 Citations
A. Modelli is an academic researcher from Micron Technology. The author has contributed to research in topics: Leakage (electronics) & SILC. The author has an hindex of 5, co-authored 5 publications.
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Papers
A new conduction mechanism for the anomalous cells in thin oxide flash EEPROMs
A. Modelli,F. Gilardoni,Daniele Ielmini,Alessandro S. Spinelli +3 more
- 30 Apr 2001
TL;DR: In this paper, the temperature dependence of the anomalous leakage current in the tail cells of flash memory arrays was investigated on arrays with different oxide thicknesses and it was shown that both the conduction mechanism and the annealing kinetics of the leakage current change when the thickness is reduced below about 8 nm, becoming independent of temperature.
56
Statistical modeling of reliability and scaling projections for flash memories
Daniele Ielmini,Alessandro S. Spinelli,A.L. Lacaita,A. Modelli +3 more
- 02 Dec 2001
TL;DR: In this paper, a physically-based model for reliability analysis of flash memories is presented, which provides a quantitative description of the distribution of the stress-induced leakage current (SILC) in large memory arrays, considering the statistics of the defects responsible for the trap-assisted tunneling (TAT) current.
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Impact of Ge–Sb–Te compound engineering on the set operation performance in phase-change memories
Mattia Boniardi,Daniele Ielmini,Innocenzo Tortorelli,Andrea Redaelli,Agostino Pirovano,Mario Allegra,Michele Magistretti,Camillo Bresolin,Davide Erbetta,A. Modelli,Enrico Varesi,Fabio Pellizzer,Andrea L. Lacaita,Roberto Bez +13 more
TL;DR: In this paper, the phase-change memory (PCM) technology is considered as one of the most attractive non-volatile memory concepts for next generation data storage, which relies on the ability of a chalcogenide material belonging to the Ge-Sb-Te compound system to reversibly change its phase between two stable states, namely the poly-crystalline low resistive state and the amorphous high-resistive state, allowing the storage of the logical bit.
27
Electrical and Thermal Behavior of Tellurium Poor GeSbTe Compounds for Phase Change Memory
Mattia Boniardi,Andrea Redaelli,Innocenzo Tortorelli,S. Lavizzari,Agostino Pirovano,Fabio Pellizzer,Enrico Varesi,Davide Erbetta,Camillo Bresolin,A. Modelli,Roberto Bez +10 more
- 20 May 2012
TL;DR: In this paper, a path for phase change active memory (PCM) material exploration toward the tellurium poor region of the GeSbTe (GST) ternary compound system is reported.
14
Equivalent cell approach for extraction of the SILC distribution in flash EEPROM cells
TL;DR: In this article, a new method for characterizing the distribution of the stress-induced leakage current (SILC) in flash memories is presented, which can be used for fast evaluation and reliability projections, as well as providing a tool for statistical investigation on the oxide leakage mechanisms.