Tantalum and titanium source reagents are described, including tantalum amide and tantalum silicon nitride precursors for the deposition of tantalum nitride material on a substrate by processes such as chemical vapor deposition, assisted chemical vapor deposition, ion implantation, molecular beam epitaxy and rapid thermal processing. The precursors may be employed to form diffusion barrier layers on microelectronic device structures enabling the use of copper metallization and ferroelectric thin films in device construction.

Tantalum amide precursors for deposition of tantalum nitride on a substrate

TiN films were deposited by remote plasma enhanced atomic layer deposition (PEALD) method using tetrakis-dimethyl-amino-titanium precursor and hydrogen, hydrogen/nitrogen mixture, and nitrogen plasmas. Remote PEALD method showed a relatively wide temperature window compared to that of conventional ALD process due to the increased reactivity of reactant gas. TiN films showed significantly lower impurity contents than those of the films deposited by other methods such as plasma enhanced chemical vapor deposition, metalorganic chemical vapor deposition, and conventional ALD using the same precursor. TiN films deposited using N2 plasma showed better characteristics than the films deposited using H2 and H2/N2 mixture plasmas. TiN films deposited by remote PEALD at 250 °C showed the resistivity value as low as about 300 μΩ cm and exhibited excellent conformal step coverage on 0.25-μm-wide and 2.5-μm-deep contact hole structure.

Remote plasma enhanced atomic layer deposition of TiN thin films using metalorganic precursor

The hardness and microstructure of Ti–Si–N films were investigated. The hardness of the films increased with increasing Si content of the films, and the maximum hardness, more than Hk4500 was obtained within the range of 0.3–0.5 of Si/(Si+Ti) ratio. The X-ray diffraction (XRD) data showed only TiN peaks and no Si–N peaks. The XRD peaks of TiN of the Ti–Si–N films became broad with Si content of the films. The TiN crystallite sizes calculated from the FWHM values of TiN diffraction peaks decreased with the increment of Si content of the films. It became clear that when the Si/(Si+Ti) ratio of the films was more than 0.1, TiN crystallite sizes decreased to less than 7 nm. The thin amorphous grain boundaries of Si–N and the TiN crystallites in size of approximately 5 nm were observed by high resolution transmission electron microscopy. It was assumed that the high hardness of the Ti–Si–N nanocomposite films was due to a halt of propagation of dislocations by an amorphous phase on TiN grain boundaries in addition to nano-scale size of TiN crystallites brought by inhibition of crystal growth of TiN through an amorphous Si–N phase.

The mechanical properties and microstructure of Ti–Si–N nanocomposite films by ion plating

Application of equilibrium thermodynamics to the development of diffusion barriers for copper metallization (invited)

Evaluation of LPCVD Me-Si-N (Me=Ta, Ti, W, Re) diffusion barriers for Cu metallizations

Low pressure chemical vapor deposition (LPCVD) of Me-Si-N (Me= Re, W, Ta) thin films were investigated for use as diffusion barrier between Cu overlayer and oxidized silicon substrates. Their amorphous or nanocrystalline structure is expected to provide better performance than usual polycrystalline barriers. For the CVD process, gaseous precursors were silane, in situ fabricated metal chloride, ammonia, hydrogen and argon. Preliminary thermodynamic simulations of the Me-Si-N and the CVD Me-Si-N-Cl-H-Ar systems (Me=Re, W, Ta), were combined to the experimental study. The Re-Si-N and W-Si-N layers crystallization temperature was found to be around 1173 K after annealing in vacuum by Rapid Thermal Annealing. Their morphology, thermal stability and resistivity were evaluated as a function of annealing temperature.

/pdf/morphology-and-thermal-stability-of-me-si-n-me-re-w-ta-for-1d0xdddwsh.pdf

Morphology and Thermal Stability of Me-Si-N (Me=Re, W, Ta) for Microelectronics

A thermodynamic and experimental approach to ReSi2 LPCVD

In this paper, the properties of low pressure chemically vapor deposited tungsten silicide films processed from tungsten chlorides and silane are studied as a function of hydrogen initial partial pressure. By means of thermodynamic calculations, we have defined a priori the operating conditions leading to each silicide deposition. The corresponding films are grown in a cold-wall reactor and characterized by x-ray diffraction and scanning electron microscopy studies. Good agreement between theoretical and experimental results is obtained. The increase of initial hydrogen partial pressure has two possible consequences: a modification of the film composition for high WCl 4 partial pressure and a modification of the film growth rate for lower WCl 4 partial pressure

Influence of Hydrogen Pressure on the Properties of CVD Tungsten Silicide Films

LPCVD RexSiyNz diffusion barriers in Si/SiO2/Cu metallizations

Handle everyday research tasks with reliable, citation-backed results

Your personal Research Agent to handle research tasks with citation-backed results

Popular Tasks used by Researchers

How can I help with your research?

Meet SciSpace

Get more enhanced response by uploading the PDFs you want me to reference.

No relevant PDFs in your library

SciSpace is the AI research assistant for academics. Run systematic literature reviews on 280M+ papers, and write papers with cited sources. Trusted by 1M+ students, PhDs & researchers.

SciSpace | AI for Research

Analyze PDFs

Code & Manuscripts

Funding & Grants

Literature & Patents

Medical & Clinical Data

Systematic Review

Visualize & Present

Web & Data

Build a Google Scholar-like website for your research.

Build a website

Create charts and images for your research

Create a Chart

Write a paper for submission to a journal

Draft a manuscript

Patent Search

Design eye-catching scientific posters in minutes.

Scientific Poster Generation

Systematic Literature Review

One task is running at the moment. Your messages will be shown right after.

Drag and drop or click here to browse

Loved by <highlight>1 million+</highlight> researchers

Extract a list of specific topics and their sources from unstructured text

Topics

Compare and analyze relevant papers that matches with your search

Papers

Get insights from PDFs and bookmarked papers from your library

My library

Recent searches

Try searching for:

Catch AI-generated content in scholarly and non-scholarly content

{ai} Detector

Ai Writer

Get PDF Summaries, highlighted text explanations 

Chat with PDF

Effortlessly create in-text citations and bibliographies in APA and 2,500 other formats

Citation generator

Get explanations, summaries, and answers on academic papers

Ease up your research workflow with {scispace}'s cohort of exciting AI tools

Elevate your academic writing skills and convey your ideas the way you want

Paraphraser

Explore our range of reading and writing tools

Your file is being prepared and should be ready in a few minutes. If it's a large file, it might take a bit longer. You can close this window, and we'll email you the file when it's done.

You have reached a maximum limit of <strong>{limit}</strong> columns in the table. Remove at least <strong>1</strong> column to add or create another one.

A.-M. Dutron

Author Tools

Chat about Author