Three-dimensional (3-D) hyperintegration is an emerging technology, which vertically stacks and interconnects multiple materials, technologies, and functional components to form highly integrated micro-nano systems. This 3-D hyperintegration is expected to lead to an industry paradigm shift due to its tremendous benefits. Worldwide academic and industrial research activities currently focus on technology innovations, simulation and design, and product prototypes. Anticipated applications start with memory, handheld devices, and high-performance computers and extend to high-density multifunctional heterogeneous integration of InfoTech-NanoTech-BioTech systems. This paper overviews the 3-D hyperintegration and packaging technologies, including motivations, key technology platforms, status, and perspectives towards commercialization. The challenges associated with the 3-D technologies are addressed, including integration architectures and design tools, yield and cost, thermal and mechanical constraints, and manufacturing infrastructure.

3-D Hyperintegration and Packaging Technologies for Micro-Nano Systems

High density through silicon via (TSV) is a key in fabricating three-dimensional (3-D) large-scale integration (LSI). We have developed polycrystalline silicon (poly-Si) TSV technology and tungsten (W)/poly-Si TSV technology for 3-D integration. In the poly-Si TSV formation, low-pressure chemical vapor deposition poly-Si heavily doped with phosphorus was conformally deposited into the narrow and deep trench formed in a Si substrate after the surface of Si trench was thermally oxidized. In the W/poly-Si TSV formation, tungsten was deposited into the Si trench by atomic layer deposition method after the poly-Si deposition, where poly-Si was used as a liner layer for W deposition. The 3-D microprocessor test chip, 3-D memory test chip, 3-D image sensor chip, and 3-D artificial retina chip were successfully fabricated by using poly-Si TSV.

High-Density Through Silicon Vias for 3-D LSIs

With vastly increased complexity and functionality in the "nanometer era" (i.e. hundreds of millions of transistors on one chip), increasing the performance of integrated circuits has become a challenging task. This is due primarily to the inevitable increase in the distance among circuit elements and interconnect design solutions have become the greatest determining factor in overall performance. 

Three-dimensional (3D) integrated circuits (ICs), which contain multiple layers of active devices, have the potential to enhance dramatically chip performance and functionality, while reducing the distance among devices on a chip. They promise solutions to the current "interconnect bottleneck" challenges faced by IC designers. They also may facilitate the integration of heterogeneous materials, devices, and signals. However, before these advantages can be realized, key technology challenges of 3D ICs must be addressed. 

This is the first book on 3-D integrated circuit design, covering all of the technological and design aspects of this emerging design paradigm, while proposing effective solutions to specific challenging problems concerning the design of three-dimensional integrated circuits. A handy, comprehensive reference or a practical design guide, this book provides a sound foundation for the design of three-dimensional integrated circuits.




* Demonstrates how to overcome "Interconnect Bottleneck" with 3D Integrated Circuit Design...leading edge design techniques offer solutions to problems (performance/power consumption/price) faced by all circuit designers.
* The FIRST book on 3D Integrated Circuit Design...provides up-to-date information that is otherwise difficult to find;
* Focuses on design issues key to the product development cyle...good design plays a major role in exploiting the implementation flexibilities offered in the third dimension;
* Provides broad coverage of 3D IC Design, including Interconnect Prediction Models, Thermal Management Techniques, and Timing Optimization...offers practical view of designing 3D circuits.

Three-Dimensional Integrated Circuit Design

High density through silicon via (TSV) is a key in fabricating three-dimensional (3-D) large-scale integration (LSI). We have developed polycrystalline silicon (poly-Si) TSV technology and tungsten (W)/poly-Si TSV technology for 3-D integration. In the poly-Si TSV formation, low-pressure chem- ical vapor deposition poly-Si heavily doped with phosphorus was conformally deposited into the narrow and deep trench formed in a Si substrate after the surface of Si trench was thermally oxidized. In the W/poly-Si TSV formation, tungsten was deposited into the Si trench by atomic layer deposition method after the poly-Si deposition, where poly-Si was used as a liner layer for W deposition. The 3-D microprocessor test chip, 3-D memory test chip, 3-D image sensor chip, and 3-D artificial retina chip were successfully fabricated by using poly-Si TSV.

High-Density Through Silicon Vias for 3-D LSIs : Silicon stacked chips that perform highly-parallel data transfer have been successfully fabricated for image processing, artificial retinas, and for microprocessor and memory testing

A three-dimensional (3-D) integration technology has been developed for the fabrication of a new 3-D shared-memory test chip. This 3-D technology is based on the wafer bonding and thinning method. Five key technologies for 3-D integration were developed, namely, the formation of vertical buried interconnections, metal microbump formations, stacked wafer thinning, wafer alignment, and wafer bonding. Deep trenches having a diameter of 2 mum and a depth of approximately 50 mum were formed in the silicon substrate using inductively coupled plasma etching to form vertical buried interconnections. These trenches were oxidized and filled with n+ polycrystalline silicon or tungsten. The 3-D devices and 3-D shared-memory test chips with three-stacked layers were fabricated by bonding the wafers with vertical buried interconnections after thinning. No characteristic degradation was observed in the fabricated 3-D devices. It was confirmed that fundamental memory operation and broadcast operation between the three memory layers could be successfully performed in the fabricated 3-D shared-memory test chip

Three-Dimensional Integration Technology Based on Wafer Bonding With Vertical Buried Interconnections

Vertical System Integration VSI(R) means the realization of three-dimensional integrated systems by thinning, stacking and vertical interchip wiring of completely processed and electrically tested device substrates. The I_nterC_hip V_ia (ICV) technology is introduced and discussed as a fully CMOS-compatible wafer-scale process which provides vertical electrical interchip interconnects placed at arbitrary locations, without intervention to the IC's fabrication technologies. Thinning of the device substrate (150 mm) down to 10 /spl mu/m as well as bonding it to an other silicon wafer had basically no influence on the electrical performance of EEPROM-products and process monitor structures. Resistances of 2 /spl Omega/ for a 2/spl times/2 /spl mu/m/sup 2/ interchip via contact and working contact chains with 480 interchip via contacts are promising results for the future fabrication of multi-layered three-dimensional systems combining the advantages of different device technologies.

InterChip via technology for vertical system integration

Handle everyday research tasks with reliable, citation-backed results

Your personal Research Agent to handle research tasks with citation-backed results

Popular Tasks used by Researchers

How can I help with your research?

Meet SciSpace

Get more enhanced response by uploading the PDFs you want me to reference.

No relevant PDFs in your library

SciSpace is the AI research assistant for academics. Run systematic literature reviews on 280M+ papers, and write papers with cited sources. Trusted by 1M+ students, PhDs & researchers.

SciSpace | AI for Research

Analyze PDFs

Code & Manuscripts

Funding & Grants

Literature & Patents

Medical & Clinical Data

Systematic Review

Visualize & Present

Web & Data

Build a Google Scholar-like website for your research.

Build a website

Create charts and images for your research

Create a Chart

Write a paper for submission to a journal

Draft a manuscript

Patent Search

Design eye-catching scientific posters in minutes.

Scientific Poster Generation

Systematic Literature Review

One task is running at the moment. Your messages will be shown right after.

Drag and drop or click here to browse

Loved by <highlight>1 million+</highlight> researchers

Extract a list of specific topics and their sources from unstructured text

Topics

Compare and analyze relevant papers that matches with your search

Papers

Get insights from PDFs and bookmarked papers from your library

My library

Recent searches

Try searching for:

Catch AI-generated content in scholarly and non-scholarly content

{ai} Detector

Ai Writer

Get PDF Summaries, highlighted text explanations 

Chat with PDF

Effortlessly create in-text citations and bibliographies in APA and 2,500 other formats

Citation generator

Get explanations, summaries, and answers on academic papers

Ease up your research workflow with {scispace}'s cohort of exciting AI tools

Elevate your academic writing skills and convey your ideas the way you want

Paraphraser

Explore our range of reading and writing tools

Your file is being prepared and should be ready in a few minutes. If it's a large file, it might take a bit longer. You can close this window, and we'll email you the file when it's done.

You have reached a maximum limit of <strong>{limit}</strong> columns in the table. Remove at least <strong>1</strong> column to add or create another one.

A. Kux

Author Tools

Chat about Author

Papers

InterChip via technology for vertical system integration