Low-temperature deposition of TiN by reactive evaporation or sputter deposition onto amorphous substrates leads to highly underdense layers which develop mixed 111/002 orientations through competitive growth. In contrast, we demonstrate here the growth of low-temperature (450 °C) fully dense polycrystalline TiN layers with complete 111 texture. This was achieved by reactive magnetron sputter deposition using a combination of: (1) highly oriented 25-nm-thick 0002 Ti underlayers to provide 111 TiN orientation through texture inheritance (local epitaxy) and (2) high flux (JN2+/JTi=14), low-energy (EN2+≃20 eV), N2+ ion irradiation in a magnetically unbalanced mode to provide enhanced adatom diffusion leading to densification during TiN deposition. The Ti underlayers were also grown in a magnetically unbalanced mode, in this case with an incident Ar+/Ti flux ratio of 2 and EAr+≃11 eV. All TiN films were slightly overstoichiometric with a N/Ti ratio of 1.02±0.03. In order to assess the diffusion-barrier propert...

Dense fully 111-textured TiN diffusion barriers: Enhanced lifetime through microstructure control during layer growth

Detailed analytical transmission electron microscopy investigations were performed on a well‐known diffusion barrier system for very‐large‐scale integration metallization. It will be demonstrated that interfacial reactions are of great importance for the barrier mechanism. Both Ti and TiN act as diffusion barrier for the semiconductor and the metallization, respectively. For an aluminum‐based metallization, TiN has a ‘‘spongelike’’ function due to its ability to absorb several amounts of aluminum at elevated temperatures and therefore inhibits diffusion towards the substrate. Ti acts for silicon as a compound forming barrier according to Nicolet’s classification [in Tungsten and Other Refractory Metals for Very Large Scale Integration Applications II, edited by E. K. Broadbent (Materials Research Society, Pittsburgh, 1987); pp. 19–26].

Diffusion barrier properties of Ti/TiN investigated by transmission electron microscopy

Methods and devices are provided for absorber layers formed on foil substrate. In one embodiment, a method of manufacturing photovoltaic devices may be comprised of providing a substrate comprising of at least one electrically conductive aluminum foil substrate, at least one electrically conductive diffusion barrier layer, and at least one electrically conductive electrode layer above the diffusion barrier layer. The diffusion barrier layer may prevent chemical interaction between the aluminum foil substrate and the electrode layer. An absorber layer may be formed on the substrate. In one embodiment, the absorber layer may be a non-silicon absorber layer. In another embodiment, the absorber layer may be an amorphous silicon (doped or undoped) absorber layer. Optionally, the absorber layer may be based on organic and/or inorganic materials.

Formation of solar cells with conductive barrier layers and foil substrates

Photovoltaic devices with conductive barrier layers and foil substrates

https://ir.nctu.edu.tw/bitstream/11536/1620/1/A1995TM18700100.pdf

Metal-organic chemical vapor deposition of tantalum nitride barrier layers for ULSI applications

Defects in reactively sputtered titanium nitride diffusion barriers in submicron devices were investigated. Four different failure mechanisms could be extracted, two originating from the production of the layers, two related to foregoing process steps. The latter are contact hole overetch and topology inside the contact hole, i.e., edges, created by deviating isotropic etch ratios of different dielectric layers in a post‐treatment after the contact etch. The insufficiencies related to the preparation of the TiN films are microcracks due to excessive stress incorporated and encroachment caused by a Ti‐rich titanium nitride on the contact hole walls, proved by an Auger electron spectroscopy analysis. Accidental accumulation of two or more of these defects in a production line can cause the barrier to fail. The process of contact degradation was investigated by transmission electron microscopy and energy‐dispersive x rays. It was found that after aluminum penetration the destruction of the contact area proceeds via a ternary AlxTiySiz reaction until all titanium is consumed, followed by the growth of a pure Al spike and the fatal breakdown of the contact.

Performance and failure mechanisms of TiN diffusion barrier layers in submicron devices

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Performance and failure mechanisms of TiN diffusion barrier layers in submicron devices