5 Papers
10 Citations
A. Khiar is an academic researcher from Johannes Kepler University of Linz. The author has contributed to research in topics: Quantum well & Quantum dot. The author has an hindex of 3, co-authored 5 publications.
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Papers
In-well pumped mid-infrared PbTe/CdTe quantum well vertical external cavity surface emitting lasers
TL;DR: In this paper, an optical in-well pumped mid-infrared vertical external cavity surface emitting laser based on PbTe quantum wells embedded in CdTe barriers is realized.
12
Vertical external cavity surface emitting PbTe/CdTe quantum dot lasers for the mid-infrared spectral region
A. Khiar,M. Eibelhuber,Valentine V. Volobuev,M. Witzan,A. Hochreiner,Heiko Groiss,Gunther Springholz +6 more
TL;DR: Optically pumped vertical external cavity surface emitting lasers (VECSELS) emitting in the mid-infrared range are demonstrated with an active structure based on PbTe quantum dots (QDs) embedded in CdTe.
10
Nucleation and formation of Au-catalyzed ZnTe nanowires on (0 0 1) GaAs by MBE: From planar to out-of-plane growth
Valentine V. Volobuev,Valentine V. Volobuev,Heiko Groiss,Alma Halilovic,H. Steiner,A. Khiar,G. Hesser,Gunther Springholz +7 more
TL;DR: In this paper, the growth evolution of gold-catalyzed ZnTe nanowire condensates on (0, 0, 1) GaAs substrates is studied.
4
Mid-IR quantum dot VECSEL
A. Khiar,M. Witzan,A. Hochreiner,M. Eibelhuber,Thomas Schwarzl,Gunther Springholz +5 more
- 12 May 2013
TL;DR: In this paper, the first vertical external cavity surface emitting laser (VECSEL) based on quantum dot (QD) active regions and operating in the wavelength range above 2.8 μm was presented.
Giant Rashba Splitting in Pb1–xSnxTe (111) Topological Crystalline Insulator Films Controlled by Bi Doping in the Bulk
Valentine V. Volobuev,Valentine V. Volobuev,P. S. Mandal,Marta Galicka,Ondřej Caha,Jaime Sánchez-Barriga,Domenico Di Sante,Andrei Varykhalov,A. Khiar,Silvia Picozzi,Gerrit E. W. Bauer,Perla Kacman,Ryszard Buczko,Oliver Rader,Gunther Springholz +14 more
TL;DR: It is shown that bulk Bi doping of epitaxial Pb1-x Snx Te (111) films induces a giant Rashba splitting at the surface that can be tuned by the doping level.