A. Khatab
University of Nottingham
17 Papers
99 Citations
A. Khatab is an academic researcher from University of Nottingham. The author has contributed to research in topics: Deep-level transient spectroscopy & Molecular beam epitaxy. The author has an hindex of 8, co-authored 17 publications. Previous affiliations of A. Khatab include University of Sheffield & Cairo University.
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Papers
Solid state synthesis of SrAl2O4:Mn2+ co-doped with Nd3+ phosphor and its optical properties
Mehmet Ayvacıklı,Z. Kotan,E. Ekdal,Y. Karabulut,A. Canimoglu,J. Garcia Guinea,A. Khatab,Mohamed Henini,Nurdogan Can +8 more
TL;DR: In this article, the influence of transition metal and rare earth ion doping on crystal structure and its luminescence properties have been investigated by using X-ray diffraction (XRD), Raman scattering, Photoluminescence (PL) and Radioluminecence (RL).
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Luminescence characterization of cerium doped yttrium gadolinium aluminate phosphors
S. Uysal Satilmis,A. Ege,Mehmet Ayvacıklı,A. Khatab,A. Khatab,E. Ekdal,Elisabeth-Jeanne Popovici,Mohamed Henini,Nurdogan Can +8 more
TL;DR: Yttrium gadolinium aluminate ((Y1−xGdx)3 Al5O12:Ce) doped cerium phosphors with the different yttrium and gadolium concentration were prepared by a wet-chemical route via the reagent simultaneous addition technique (WCS-SimAdd).
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Deep-level Transient Spectroscopy of GaAs/AlGaAs Multi-Quantum Wells Grown on (100) and (311)B GaAs Substrates.
TL;DR: One dominant electron-emitting level is observed in the quantum wells structure grown on (100) plane whose activation energy varies from 0.47 to 1.3 eV as junction electric field varies from zero field (edge of the depletion region) to 4.7 × 106 V/m.
Deep levels in H-irradiated GaAs1-xNx (x < 0.01) grown by molecular beam epitaxy
TL;DR: In this article, the activation energy, capture cross section and density of the electron traps have been estimated and compared with results obtained in N-free as-grown and H-irradiated bulk GaAs.
13
Deep-level transient spectroscopy of interfacial states in “buffer-free” p-i-n GaSb/GaAs devices
Mohsin Aziz,Philippe Ferrandis,Philippe Ferrandis,Abdelmadjid Mesli,R. H. Mari,Jorlandio F. Felix,Azzouz Sellai,Dler Jameel,Noor Al Saqri,Noor Al Saqri,A. Khatab,D. Taylor,Mohamed Henini +12 more
TL;DR: In this paper, a systematic study was carried out on defect states in Interfacial Misfit (IMF) unpassivated and Te-passivated IMF in p-i-n GaSb/GaAs devices using Deep Level Transient Spectroscopy (DLTS) and Laplace DLTS.