The Compact Muon Solenoid (CMS) detector is described. The detector operates at the Large Hadron Collider (LHC) at CERN. It was conceived to study proton-proton (and lead-lead) collisions at a centre-of-mass energy of 14 TeV (5.5 TeV nucleon-nucleon) and at luminosities up to 10(34)cm(-2)s(-1) (10(27)cm(-2)s(-1)). At the core of the CMS detector sits a high-magnetic-field and large-bore superconducting solenoid surrounding an all-silicon pixel and strip tracker, a lead-tungstate scintillating-crystals electromagnetic calorimeter, and a brass-scintillator sampling hadron calorimeter. The iron yoke of the flux-return is instrumented with four stations of muon detectors covering most of the 4 pi solid angle. Forward sampling calorimeters extend the pseudo-rapidity coverage to high values (vertical bar eta vertical bar <= 5) assuring very good hermeticity. The overall dimensions of the CMS detector are a length of 21.6 m, a diameter of 14.6 m and a total weight of 12500 t.

/pdf/the-cms-experiment-at-the-cern-lhc-4d2umuzboo.pdf

The CMS experiment at the CERN LHC

The current models for bulk damage in high resistivity silicon have been reviewed. The damage constants were obtained from a global data survey. On this basis the degradation of the silicon counters in the ATLAS Inner Detector during a 10 year LHC operation is forecasted.

Radiation studies and operational projections for silicon in the ATLAS inner detector

This work presents an overview of the most important mechanisms of radiation damage in silicon detectors to be used for high energy experiments in LHC. The changes in the shallow concentration have been studied by thermally stimulated currents (TSC) after proton and neutron irradiation with fluences up to 10/sup 15/ cm/sup -2/ to investigate the role of thermal donors and the donor-removal effect in standard and oxygen enriched silicon with different resistivities. Deep defects in irradiated silicon have been analysed by deep level transient spectroscopy (DLTS) and photo induced current transient spectroscopy (PICTS) in the same materials. The radiation-induced microscopic disorder has been related with the carrier transport properties of irradiated silicon measured by the Hall effect, by capacitance and current vs. voltage characteristics and with charge collection efficiency. The dependence of the irradiated silicon detectors performances on crystal orientation, on incident particle type and on the initial concentration of oxygen and carbon is also discussed.

Radiation damage in silicon detectors

The subject of radiation damage to Si detectors induced by 24-GeV/c protons and nuclear reactor neutrons has been studied. Detectors fabricated on single-crystal silicon enriched with various impurities have been tested. Significant differences in electrically active defects have been found between the various types of material. The results of the study suggest for the first time that the widely used nonionizing energy loss (NIEL) factors are insufficient for normalization of the electrically active damage in case of oxygen- and carbon-enriched silicon detectors. It has been found that a deliberate introduction of impurities into the semiconductor can affect the radiation hardness of silicon detectors.

/pdf/comparison-of-radiation-damage-in-silicon-induced-by-proton-1zw62bsknf.pdf

Comparison of radiation damage in silicon induced by proton and neutron irradiation

Silicon detectors are used or going to be used as tracking devices in many high energy physics experiments. Therefore they are located close to the interaction point, where the detectors are exposed to very high particle fluxes and ionization doses, especially in future experiments with very high energies and luminosities. Ongoing investigations concerning the radiation damage, started already several years ago, include bulk and surface damage related questions. The two main objectives of these studies are: (1) predict the radiation induced change in the detector parameters expected for any application, and (2) improve the radiation hardness of the detectors. A general overview of the current progress of the radiation hardness studies towards these goals is given here.

/pdf/radiation-hardness-of-silicon-detectors-current-status-2vwm5cpexe.pdf

Radiation hardness of silicon detectors: current status

Systematic investigations of the reverse annealing effect after radiation damage have been performed in particular for the change of the effective impurity concentration. The pronounced long term anneal observed at room temperature was further investigated by isochronal and isothermal studies. In order to demonstrate the radiation hardness of silicon detectors during 10 years of LHC operation an experiment was started at a higher temperature which compressed the real operational scenario to about 10 months.

/pdf/reverse-annealing-of-the-effective-impurity-concentration-54ppym7pix.pdf

Reverse annealing of the effective impurity concentration and long term operational scenario for silicon detectors in future collider experiments

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Reverse annealing of the effective impurity concentration and long term operational scenario for silicon detectors in future collider experiments