A. H. Castro Neto
National University of Singapore
388 Papers
3.6K Citations
A. H. Castro Neto is an academic researcher from National University of Singapore. The author has contributed to research in topics: Graphene & Bilayer graphene. The author has an hindex of 96, co-authored 372 publications. Previous affiliations of A. H. Castro Neto include Boston University & University of California, Santa Barbara.
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Papers
The electronic properties of graphene
TL;DR: In this paper, the basic theoretical aspects of graphene, a one-atom-thick allotrope of carbon, with unusual two-dimensional Dirac-like electronic excitations, are discussed.
2D materials and van der Waals heterostructures
TL;DR: Two-dimensional heterostructures with extended range of functionalities yields a range of possible applications, and spectrum reconstruction in graphene interacting with hBN allowed several groups to study the Hofstadter butterfly effect and topological currents in such a system.
6.4K
Strong light-matter interactions in heterostructures of atomically thin films.
L. Britnell,Ricardo M. Ribeiro,Ricardo M. Ribeiro,Axel Eckmann,Rashid Jalil,Branson D. Belle,Artem Mishchenko,Yong-Jin Kim,Yong-Jin Kim,Roman V. Gorbachev,Thanasis Georgiou,Sergey V. Morozov,Alexander N. Grigorenko,Andre K. Geim,Cinzia Casiraghi,Cinzia Casiraghi,A. H. Castro Neto,K. S. Novoselov +17 more
TL;DR: Transition metal dichalcogenides sandwiched between two layers of graphene produce an enhanced photoresponse, which allows development of extremely efficient flexible photovoltaic devices with photoresponsivity above 0.1 ampere per watt (corresponding to an external quantum efficiency of above 30%).
Substrate-induced bandgap opening in epitaxial graphene
Shuyun Zhou,Gey-Hong Gweon,Gey-Hong Gweon,Alexei V. Fedorov,Phillip N. First,W. A. de Heer,D.-H. Lee,Francisco Guinea,A. H. Castro Neto,Alessandra Lanzara,Alessandra Lanzara +10 more
TL;DR: It is shown that when graphene is epitaxially grown on SiC substrate, a gap of approximately 0.26 eV is produced and it is proposed that the origin of this gap is the breaking of sublattice symmetry owing to the graphene-substrate interaction.
Gate-tuning of graphene plasmons revealed by infrared nano-imaging
Zhe Fei,Aleksandr Rodin,Gregory O. Andreev,Wenzhong Bao,Wenzhong Bao,Alexander McLeod,Martin Wagner,L. M. Zhang,Zeng Zhao,Mark H. Thiemens,Gerardo Dominguez,Michael M. Fogler,A. H. Castro Neto,Chun Ning Lau,Fritz Keilmann,Dimitri Basov +15 more
TL;DR: Using infrared nano-imaging, it is shown that common graphene/SiO2/Si back-gated structures support propagating surface plasmons and changes both the amplitude and the wavelength are altered by varying the gate voltage.
2.2K