A. Grill
Katholieke Universiteit Leuven
38 Papers
71 Citations
A. Grill is an academic researcher from Katholieke Universiteit Leuven. The author has contributed to research in topics: Transistor & Negative-bias temperature instability. The author has an hindex of 8, co-authored 38 publications. Previous affiliations of A. Grill include Vienna University of Technology.
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Papers
The role of charge trapping in MoS 2 /SiO 2 and MoS 2 /hBN field-effect transistors
Yury Yu. Illarionov,Gerhard Rzepa,Michael Waltl,Theresia Knobloch,A. Grill,Marco M. Furchi,Thomas Mueller,Tibor Grasser +7 more
- 11 Jul 2016
TL;DR: In this paper, a combined study of both the hysteresis as well as the arguably most important reliability issue, the bias-temperature instability, was performed on single-layer MoS2 FETs with SiO2 and hBN insulators and demonstrated that both phenomena are indeed due to traps in the gate insulator with time constants distributed over wide timescales.
235
Physical Model of Low-Temperature to Cryogenic Threshold Voltage in MOSFETs
Arnout Beckers,Farzan Jazaeri,A. Grill,Subramanian Narasimhamoorthy,Bertrand Parvais,Christian Enz +5 more
TL;DR: In this paper, a physical model of the threshold voltage in MOSFETs valid down to 4.2 K was presented and validated with measurements in large-area nMOS and pMOS devices of a commercial 28-nm bulk CMOS process.
95
Reliability and Variability of Advanced CMOS Devices at Cryogenic Temperatures
A. Grill,Erik Bury,J. Michl,Stanislav Tyaginov,D. Linten,Tibor Grasser,Bertrand Parvais,B. Kaczer,Michael Waltl,Iuliana Radu +9 more
- 01 Apr 2020
TL;DR: It is shown that the investigated nMOS transistors still suffer from significant PBTI and HC degradation down to the lowest temperatures, and the contribution of multiple- carrier mechanism versus single-carrier mechanism of Si-H bond dissociation across different temperatures is investigated.
55
Hot-carrier degradation in FinFETs: Modeling, peculiarities, and impact of device topology
Alexander Makarov,Stanislav Tyaginov,B. Kaczer,M. Jech,Adrian Chasin,A. Grill,Geert Hellings,Mikhail I. Vexler,D. Linten,Tibor Grasser +9 more
- 01 Dec 2017
TL;DR: In this paper, the effect of transistor architectural parameters, namely fin length, width, and height, on hot-carrier degradation in FinFETs has been analyzed using a physics-based HCD model.
37
Impact of Mixed Negative Bias Temperature Instability and Hot Carrier Stress on MOSFET Characteristics—Part I: Experimental
M. Jech,Bianka Ullmann,Gerhard Rzepa,Stanislav Tyaginov,A. Grill,Michael Waltl,Dominic Jabs,Christoph Jungemann,Tibor Grasser +8 more
TL;DR: In this article, the authors present a thorough experimental study of the impact of mixed stress conditions on SiON pMOSFET characteristics, which contain a study at the single defect level, focusing on the contribution of single defects to the recoverable component of degradation.