There is an increasing demand for thin films with tailored properties, which requires the use and control of adequate deposition techniques. Ion beam sputter deposition (IBSD) is a physical vapor deposition (PVD) technique that is capable of fulfilling the technological challenges. In contrast to other PVD techniques, IBSD offers a unique opportunity to tailor the properties of the film-forming particles (sputtered target and scattered primary particles) and, hence, thin film properties. This is related to the fact that the generation and acceleration of the primary particles from the ion beam source, the generation of film-forming particles at the target, and thin film growth on the substrate are spatially separated. Thus, by changing ion beam parameters (ion species and ion energy) and geometrical parameters (ion incidence angle and emission angle), the energy distributions of the film-forming particles are modified. Even though in use for several decades, IBSD was not investigated systematically until lately. Utilizing the full potential of IBSD requires a comprehensive understanding of the physical processes. This tutorial describes the systematics of IBSD: The correlation between process parameters, properties of the film-forming particles, and thin film properties. The most important process parameters are the scattering geometry and the primary particle species. Depending on the material, different film properties can be influenced. Examples are adhesion, structural properties, composition, surface roughness, mass density, optical properties, stress, and electrical resistivity. In addition to the experimental results, fundamental physical aspects, experimental setups, and techniques for thin film deposition and particle characterization are described.

Tutorial: The systematics of ion beam sputtering for deposition of thin films with tailored properties

Angular and angle-resolved energy distributions of neutral atoms sputtered from elemental targets under ion bombardment are investigated by numerical and analytic modeling. Special emphasis is made on sub-keV ion bombardment, which is typical for sputter deposition sources. Scaling laws that define the distribution anisotropies are formulated. An approximate semiempirical description is suggested for anisotropic energy distributions.

Estimates of differential sputtering yields for deposition applications

The energy of sputtered atoms that are emitted from ion-bombarded targets is an important factor in thin film technology. In particular, bombardment by obliquely incident ions is of interest for applications since it leads to more efficient sputtering in comparison to normal incidence. In this paper, we investigate the angle-resolved energy distributions of atoms sputtered by obliquely incident ion beams by the means of numerical modeling. We identify major trends that govern the sputtering anisotropies and provide a semi-empirical dependence, which describes the energy distributions and the average energies of atoms emitted under oblique ion impact. This dependence replaces the well-known Thompson formula in cases when anisotropies are important.

Anisotropic energies of sputtered atoms under oblique ion incidence

https://biblio.ugent.be/publication/3201991/file/3201997.pdf

The influence of target surface morphology on the deposition flux during direct-current magnetron sputtering

Systematic investigation of the properties of TiO2 films grown by reactive ion beam sputter deposition

In this contribution, measurements of energy distributions of sputtered metal atoms (tungsten and aluminum), released from polycrystalline metal targets by bombardment with noble gas ions (argon and xenon, respectively) in the energy range between 150 and 250 eV, are reported. Laser induced fluorescence spectroscopy in connection with a special designed detection geometry is applied to study energy distributions of atoms ejected in selected emission angles. Normal and oblique incidence is investigated. In both cases, systematic changes of the measured energy distribution with the emission angle are observed. The experimental distributions are compared to simulations performed by the Monte-Carlo code TRIM.SP.

Angular resolved energy distributions of sputtered atoms at low bombarding energy

A study of angular resolved velocity (energy) distributions of atoms sputtered from in situ prepared metal films is described in this contribution. The velocity resolution of the set-up is based on the pulsed laser-induced fluorescence technique, i.e., scanning the narrow bandwidth dye laser radiation over the Doppler broadened absorption profile of the sputtered particles. The arrangement of the vacuum vessel and fluorescence detection optics provides the means for an independent selection of the observed emission direction and the angle of incidence. A pulsed ion gun is applied to bombard the target with noble gas ions in the energy range between 200 and 500 eV. The target assembly allows the preparation of thin metal films by evaporation on optically polished glass substrates without break of the vacuum. We report on measurements obtained with this arrangement, i.e., the determination of energy distributions of sputtered aluminum atoms. The bombardment at both the normal and the oblique incidence of the ion beam are contained in the investigation. Pronounced anisotropic effects are observed in both cases. In the case of oblique bombardment the shape of the distributions reflects cascade effects as well as single collision properties. The energy distribution is approximated with the aid of an energy spectrum involving a superposition of exponential functions. The experimental results are compared with simulations obtained by the Monte Carlo code TRIM.SP.

An experimental investigation of angular resolved energy distributions of atoms sputtered from evaporated aluminum films

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Angular resolved energy distributions of sputtered atoms at low bombarding energy

An experimental investigation of angular resolved energy distributions of atoms sputtered from evaporated aluminum films