Mixtures and nanolaminates of Al2O3 and TiO2 with different alumina to titania ratios were prepared by atomic layer deposition. The studies were aimed at electrical characterization of metal-insulator-semiconductor capacitors formed by combining an insulating oxide with large band gap (Al2O3) with an oxide with high dielectric permittivity (TiO2). In mixtures, the ratio of Al2O3 and TiO2 growth cycles varied from 10:2 to 5:5 with target layer thickness in the range of 6.2–8.8nm. In Al2O3–TiO2–Al2O3 nanolaminates, the thicknesses of Al2O3 and TiO2 constituent layers were in the ranges of 3–6 and 2–15nm, respectively. Appreciable step coverage on deep trenched substrates with high aspect ratio (1:40) was achieved with short pulse and purge times otherwise suited for the deposition of planar capacitors. The measurements confirmed the model calculations of leakage currents for laminates, mixtures, and pure Al2O3 films predicting the lowest leakage for pure Al2O3 films at all possible equivalent oxide thicknes...

Electrical characterization of AlxTiyOz mixtures and Al2O3–TiO2–Al2O3 nanolaminates

The electronic structure of γ-Al2O3 and α-Al2O3 has been investigated by means of the density functional theory. A comparison of the calculation results with experimental data for amorphous alumina films is also presented. The electronic structure is described in terms of band structure and density of states. It has been found that γ-Al2O3 have similar electronic structure with α-Al2O3 and amorphous Al2O3. Effective electron masses in γ-Al2O3 as well as in α-Al2O3 equal to ≈ 0.4 m 0 that is in a good agreement with the experimentally found tunnel electron mass in amorphous Al2O3. The heavy holes in both alumina crystals are explained by the valence band top forming by O 2p π nonbonding orbitals.

/pdf/electronic-structure-of-aluminum-oxide-ab-initio-simulations-4hep92gywy.pdf

Electronic structure of aluminum oxide: ab initio simulations of α and γ phases and comparison with experiment for amorphous films

We investigated the electronic properties of ZnO nanowire combined with the scaled high-k Al2O3 dielectrics using metal-oxide-semiconductor and field effect transistor (FET) device structures. We found that Al2O3 dielectric material can significantly reduce leakage currents when the applied voltage was restricted less than the transition voltage of direct tunneling to Fowler–Nordheim tunneling. The ZnO nanowire FETs with Al2O3 dielectrics exhibited the increase in electrical conductance, transconductance, and mobility and the threshold voltage shifted to the negative gate bias direction with decreasing Al2O3 dielectric layer thickness.

Electrical properties of ZnO nanowire field effect transistors with varying high-k Al2O3 dielectric thickness

The work function (WF) of several phases of Pt-Al alloys is investigated. A first-principles study is performed to determine the dependence of the vacuum WF (VWF) on the phase, crystallographic orientation, and atomic termination. In parallel, the effective WF (EWF) of these alloys is experimentally measured using metal-oxide semiconductor devices. A detailed microstructural characterization based on x-ray diffraction and transmission electron microscopy allows the comparison between experiment and calculations. It is found that despite the formation of a complex microstructure, the calculated VWF values are in good agreement with the experimental EWF values. The possible VWF range for each phase has a relatively small (\ensuremath{\sim}0.5 eV) span for different orientations and atomic terminations, and it is found that Pt atoms in the terminating plane are more dominant than Al atoms. The results demonstrate that first-principles calculations of the WF of alloys can be used to successfully predict the experimental WF and that knowledge of the microstructure is important for the accuracy of these calculations.

Composition and crystallography dependence of the work function: Experiment and calculations of Pt-Al alloys

In this paper, tantalum pentoxide (Ta2O5) has been investigated as the charge-storage dielectric for discrete, multibit memory applications. Two Ta2O5 containing dielectric stacks, Al2O3/Ta2O5/SiO2 and Al2O3/Ta2O5/Al2O3/Ta2O5/SiO2, have been fabricated and measured. Both structures exhibited excellent nonvolatile memory characteristics: fast program/erase speed with significant flat-band voltage shift at 1 μs, long retention, and good endurance. Interesting multiple staircase memory characteristics observed in the devices with two layers of Ta2O5 exhibit multiple, discrete charge-storage states. Such an integration of multibit in one cell is very attractive for developing high-density nonvolatile memory.

Design and Fabrication of Ta $_{2}$ O $_{5}$ Stacks for Discrete Multibit Memory Application

The authors developed a new Al2O3–SiO2 (A-O) stack for application as a high voltage complementary metal oxide semiconductor (CMOS) dielectric and/or top oxide in electrically erasable programmable read only memory floating gate and polysilicon-oxide-nitride-oxide-silicon embedded memories in advanced technology nodes. An amorphous atomic layer deposited alumina is doped with nitrogen and transformed into the crystalline phase by further rapid thermal process annealing. The 65A effective oxide thickness (EOT) stack allows operating voltages twice exceeding the values for thermal SiO2 of the same EOT, has extremely low leakage currents, has negligible charge trapping, and is immune to degradation. Moreover, after alumina removal, the remaining strongly nitrided bottom oxide layer can be used as the gate dielectric of CMOS devices.

Al2O3–SiO2 stack with enhanced reliability

Effects of interfaces and thermal annealing on the electrical performance of the SiO2∕Si3N4∕Al2O3 (ONA) stacks in nonvolatile memory devices were investigated The results demonstrated the principal role of Si3N4∕Al2O3 and Al2O3/metal-gate interfaces in controlling charge retention properties of memory cells Memory devices that employ both electron and hole trappings were fabricated using a controlled oxidation of nitride surface prior to the Al2O3 growth, a high-temperature annealing of the ONA stack in the N2+O2 atmosphere, and a metal gate electrode having a high work function (Pt) These devices exhibited electrical performance superior to that of their existing SiO2∕Si3N4∕SiO2 analogs

SiO2∕Si3N4∕Al2O3 stacks for scaled-down memory devices: Effects of interfaces and thermal annealing

Handle everyday research tasks with reliable, citation-backed results

Your personal Research Agent to handle research tasks with citation-backed results

Popular Tasks used by Researchers

How can I help with your research?

Meet SciSpace

Get more enhanced response by uploading the PDFs you want me to reference.

No relevant PDFs in your library

SciSpace is the AI research assistant for academics. Run systematic literature reviews on 280M+ papers, and write papers with cited sources. Trusted by 1M+ students, PhDs & researchers.

SciSpace | AI for Research

Analyze PDFs

Code & Manuscripts

Funding & Grants

Literature & Patents

Medical & Clinical Data

Systematic Review

Visualize & Present

Web & Data

Build a Google Scholar-like website for your research.

Build a website

Create charts and images for your research

Create a Chart

Write a paper for submission to a journal

Draft a manuscript

Patent Search

Design eye-catching scientific posters in minutes.

Scientific Poster Generation

Systematic Literature Review

One task is running at the moment. Your messages will be shown right after.

Drag and drop or click here to browse

Loved by <highlight>1 million+</highlight> researchers

Extract a list of specific topics and their sources from unstructured text

Topics

Compare and analyze relevant papers that matches with your search

Papers

Get insights from PDFs and bookmarked papers from your library

My library

Recent searches

Try searching for:

Catch AI-generated content in scholarly and non-scholarly content

{ai} Detector

Ai Writer

Get PDF Summaries, highlighted text explanations 

Chat with PDF

Effortlessly create in-text citations and bibliographies in APA and 2,500 other formats

Citation generator

Get explanations, summaries, and answers on academic papers

Ease up your research workflow with {scispace}'s cohort of exciting AI tools

Elevate your academic writing skills and convey your ideas the way you want

Paraphraser

Explore our range of reading and writing tools

Your file is being prepared and should be ready in a few minutes. If it's a large file, it might take a bit longer. You can close this window, and we'll email you the file when it's done.

You have reached a maximum limit of <strong>{limit}</strong> columns in the table. Remove at least <strong>1</strong> column to add or create another one.

A. Fenigstein

Author Tools

Chat about Author

Papers

Al2O3–SiO2 stack with enhanced reliability

SiO2∕Si3N4∕Al2O3 stacks for scaled-down memory devices: Effects of interfaces and thermal annealing