Studies of the properties and characteristics of transition metal silicides have been stimulated by their (potential) use in integrated circuit technology. This review describes some of the most recent studies in this field of research. Formation mechanisms of silicides are discussed in some detail. A division is made between near-noble and refractory metal silicidation which aids in the understanding of differences in formation mechanisms of the various silicides. The evolution of the components of thin film stress during metal silicidation is also elucidated. In the review of the practical uses of these materials, emphasis is placed on specific processes involving laterally confined (self-aligned) silicide film formation as more advanced applications require film formation only in certain localized regions on a Si wafer.

https://iopscience.iop.org/article/10.1088/0034-4885/56/11/002/pdf

Transition metal silicides in silicon technology

Interactions between binary metallic alloys and Si, GeSi and GaAs

Polycrystalline Pd and amorphous PdTa films on Al substrates were studied by a variable energy positron beam and by Rutherford backscattering. Since positron diffusion in the overlayers is limited, the range follows directly from the Doppler broadening as a function of incident positron energy. To observe possible effects of positron backscattering, a sandwich of Al/Pd/Al was studied as well. It was found that the mean penetration depth is not described well by z(E)=A(μg/cm2)×En(E), if A and n are assumed to be material and energy independent.

/pdf/range-of-slow-positrons-in-metal-overlayers-on-al-3n6rd15uwp.pdf

Range of slow positrons in metal overlayers on Al

A kinetic model for diffusional growth of silicides in thin‐metal‐film–silicon systems is proposed. The time dependence of the growth has been shown to be a function of the morphology of the growing silicide and the controlling diffusion process (diffusion in the film, interface diffusion). If the phase grows only in depth the parabolic dependence of silicide thickness h on time t in most cases follows the relation h≂t0.5. If silicide grows only in width w, then w≂t. In the case of simultaneous change of thickness and width when h/w=const the growth is proportional to t0.33.

Kinetics of diffusion growth of silicides in silicon-thin-metal-film systems

The scaling of interconnect dimensions is becoming increasingly difficult due to the fast rise of line/via resistance. To alleviate this problem, Co has a high potential as an alternative material to Cu or W in metallization schemes. In this article, Co is used as local interconnects, and Co–Ti is proposed as a single barrier/liner to replace the conventional thick TiN/Ti bilayer. The samples with and without Co–Ti were fabricated to investigate the barrier property of Co–Ti. Meanwhile, the reaction mechanism between Co/Co–Ti and Si was comprehensively studied. In order to further evaluate the barrier property of Co–Ti, the samples were annealed at 500 °C for different durations, including 1, 30, and 60 min. Interfacial quality, elemental distribution, and Co spikes were analyzed by cross-sectional and plane-view transmission electron microscopy (TEM) in combination with corresponding electron energy loss spectroscopy (EELS) mapping. Furthermore, refined transmission line model (RTLM) structures were employed to extract the specific contact resistivity ( $\rho _{c}$ ) of as-fabricated devices with different Co:Ti atomic ratios. Achieved results demonstrate that as a single barrier/liner, Co0.65Ti0.35 is highly effective in preventing Co diffusion into Si substrate, thus realizing a uniform Co0.65Ti0.35/n+-Si interface, spike-free contacts, and ultralow $\rho _{c}$ of $2.3 \times 10^{-8} \Omega {-}cm^{2}$ .

Investigation of Barrier Property of Amorphous Co–Ti Layer as Single Barrier/Liner in Local Co Interconnects

The applicability of PdxTa1−x as a diffusion barrier on Si has been investigated. For this purpose PdxTa1−x films of 200‐nm thickness (x ranges from 0 to 1) were deposited on Si(100), and the reaction between overlayer and substrate was studied as a function of temperature. Interaction was found to occur at temperatures increasing with the Ta content. The as‐deposited PdxTa1−x films with 0.2≤x≤0.6 were found to be amorphous. The amorphous phase had a higher reaction temperature than the crystalline one, causing a discontinuous step in the reaction temperature. Rutherford backscattering spectrometry spectra revealed that for the Pd‐rich compositions, first a stoichiometric Pd2Si layer formed underneath a pure Ta layer. At higher temperatures TaSi2 formed at the surface. For Ta‐rich compositions Pd2Si formed first as well; however, the reaction temperature was so high that Pd2Si grains formed in a Si matrix. The defect density of the Ta layer, which remained after outdiffusion of Pd, was investigated using variable energy positron annihilation. The defect concentration is very high, as deduced from the trapped positron fraction. A model is presented that describes the composition dependence of the reaction temperature.The applicability of PdxTa1−x as a diffusion barrier on Si has been investigated. For this purpose PdxTa1−x films of 200‐nm thickness (x ranges from 0 to 1) were deposited on Si(100), and the reaction between overlayer and substrate was studied as a function of temperature. Interaction was found to occur at temperatures increasing with the Ta content. The as‐deposited PdxTa1−x films with 0.2≤x≤0.6 were found to be amorphous. The amorphous phase had a higher reaction temperature than the crystalline one, causing a discontinuous step in the reaction temperature. Rutherford backscattering spectrometry spectra revealed that for the Pd‐rich compositions, first a stoichiometric Pd2Si layer formed underneath a pure Ta layer. At higher temperatures TaSi2 formed at the surface. For Ta‐rich compositions Pd2Si formed first as well; however, the reaction temperature was so high that Pd2Si grains formed in a Si matrix. The defect density of the Ta layer, which remained after outdiffusion of Pd, was investigated using ...

A study of Pd-Ta on Si(100) using Auger electron spectroscopy, Rutherford backscattering spectrometry, and variable energy positron annihilation

The reaction of amorphous Co–Zr films with Si(100) and SiO2 substrates has been investigated using in situ Rutherford backscattering spectrometry, Auger electron spectroscopy and x‐ray diffraction. For this purpose, CoxZr1−x (x=0.5 or 0.6) films were deposited on a substrate and annealed in vacuum or NH3. During annealing of an amorphous Co–Zr film on Si in vacuum at a temperature lower than 600 °C, Co reacts with Si, forming CoSi2 next to the substrate. Above 600 °C, the layer reacts completely with Si and the following structure develops: (ZrSi2+CoSi2)/CoSi2/Si. Annealing the same structure in NH3 above 600 °C causes two reactions to occur simultaneously: (i) CoSi2 formation at the film/substrate interface, and (ii) nitridation of the film surface, forming ZrN, which stops the diffusion of Si to the surface. It was found that a fraction of the CoSi2 grains was aligned with the Si(100) substrate, irrespective of the annealing ambient. This fraction increases with increasing annealing temperature. When an...

The reaction of amorphous Co–Zr layers with Si(100) and SiO2 substrates by annealing in vacuum and NH3

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A study of Pd-Ta on Si(100) using Auger electron spectroscopy, Rutherford backscattering spectrometry, and variable energy positron annihilation

The reaction of amorphous Co–Zr layers with Si(100) and SiO2 substrates by annealing in vacuum and NH3