Wide band gap semiconductors are essential for today's electronic devices and energy applications because of their high optical transparency, controllable carrier concentration, and tunable electrical conductivity. The most intensively investigated wide band gap semiconductors are transparent conductive oxides (TCOs), such as tin-doped indium oxide (ITO) and amorphous In-Ga-Zn-O (IGZO), used in displays and solar cells, carbides (e.g., SiC) and nitrides (e.g., GaN) used in power electronics, and emerging halides (e.g., γ-CuI) and 2D electronic materials (e.g., graphene) used in various optoelectronic devices. Compared to these prominent materials families, chalcogen-based (Ch = S, Se, Te) wide band gap semiconductors are less heavily investigated but stand out because of their propensity for p-type doping, high mobilities, high valence band positions (i.e., low ionization potentials), and broad applications in electronic devices such as CdTe solar cells. This manuscript provides a review of wide band gap chalcogenide semiconductors. First, we outline general materials design parameters of high performing transparent semiconductors, as well as the theoretical and experimental underpinnings of the corresponding research methods. We proceed to summarize progress in wide band gap (EG > 2 eV) chalcogenide materials-namely, II-VI MCh binaries, CuMCh2 chalcopyrites, Cu3MCh4 sulvanites, mixed-anion layered CuMCh(O,F), and 2D materials-and discuss computational predictions of potential new candidates in this family, highlighting their optical and electrical properties. We finally review applications-for example, photovoltaic and photoelectrochemical solar cells, transistors, and light emitting diodes-that employ wide band gap chalcogenides as either an active or passive layer. By examining, categorizing, and discussing prospective directions in wide band gap chalcogenides, this Review aims to inspire continued research on this emerging class of transparent semiconductors and thereby enable future innovations for optoelectronic devices.

https://escholarship.org/content/qt1xf1k15d/qt1xf1k15d.pdf?t=qof0vs

Wide Band Gap Chalcogenide Semiconductors.

Density functional theory is used to explore structural, elastic, and mechanical properties of SrLiF3, SrNaF3, SrKF3 and SrRbF3 fluoroperovskite compounds by means of an ab-initio Full Potential-Linearized Augmented Plane Wave (FP-LAPW) method. Several lattice parameters are employed to obtain accurate equilibrium volume (Vo). The resultant quantities include ground state energy, elastic constants, shear modulus, bulk modulus, young's modulus, cauchy's pressure, poisson's ratio, shear constant, ratio of elastic anisotropy factor, kleinman's parameter, melting temperature, and lame's coefficient. The calculated structural parameters via DFT as well as analytical methods are found to be consistent with experimental findings. Chemical bonding is used to investigate corresponding chemical trends which authenticate combination of covalent-ionic behavior. Furthermore electron density plots as well as elastic and mechanical properties are reported for the first time which reveals that fluorine based strontium series of perovskites are mechanically stable and posses weak resistance towards shear deformation as compared to resistance towards unidirectional compression while brittleness and ionic behavior is dominated in them which decreases from SrLiF3 to SrRbF3. Calculated cauchy's pressure, poisson's ratio and B/G ratio also proves ionic nature in these compounds. The present methodology represents an effective and influential approach to calculate the whole set of elastic and mechanical parameters which would support to understand various physical phenomena and empower device engineers for implementing these materials in numerous applications.

https://iopscience.iop.org/article/10.1088/0253-6102/66/5/571/pdf

First Principles Investigation of Fluorine Based Strontium Series of Perovskites

In this study, we have explored the structural, electronic, and magnetic properties of V-doped zincblende MgSe and MgTe compounds using density functional calculations. The Wu-Cohen generalized gradient approximation is used for optimizing the structural properties, while the modified Becke and Johnson local (spin) density approximation functional has been employed to compute the electronic and magnetic properties. The spin dependent band structures, electronic density of state, and magnetic moments calculated for V-doped MgSe and MgTe semiconductors exhibit occurrence of 100 % spin polarization at the Fermi level which confirms stable half-metallic ferromagnetism in these materials. The spin-down gaps and the half-metallic gaps are analyzed in terms of V-3d and Se-4p (Te-5 p) hybridization, where it is observed that the V-3dstates play a key role in generating spin polarization and the magnetic moment in these compounds. The exchange constants N
 0
 αand N
 0
 β have been calculated to demonstrate the effects resulting from exchange splitting process. Furthermore, spin-polarized charge density calculation is presented for elucidating the bonding nature, while pressure dependence of total magnetic moment for three concentrations of V-doped MgSe and MgTe are also discussed.

Theoretical Investigation of Structural, Electronic, and Magnetic Properties of V-Doped MgSe and MgTe Semiconductors

First-principle investigation of magnetic and electronic properties of vanadium- and chromium-doped cubic aluminum phosphide

The half-metallic ferromagnetism character in Be1−xVxY (Y=Se and Te) alloys: An ab-initio study

First-principle calculations within the framework of density functional theory are employed to study the structural, electronic, and half-metallic ferromagnetic properties of In1−x (TM)
 x
 P (TM = Cr, Mn) at concentrations (x = 0.0625, 0.125, 0.25)of transition metal in zinc blende phase. The investigations of electronic and magnetic properties indicate that In1−xTM
 x
 P (TM = Cr, Mn) at x = 0.0625, 0.125, and 0.25 are half-metallic ferromagnets with 100 % magnetic spin polarization. On the one hand, the total magnetization is an integer Bohr magneton of 3 μ
 B and 4 μ
 B for In1−xCr
 x
 P and In1−xMn
 x
 P, respectively, which confirms the half-metallic feature of In1−xTM
 x
 P compounds. On the other hand, the densities of states of majority-spin states show that the large hybridization between 3p (P) and 3d (TM) partially filled states dominates the gap, which stabilizes the ferromagnetic state configuration associated with double-exchange mechanism. The band structures depict that half-metallic gap at x = 0.0625 is 0.404 eV for In1−xCr
 x
 P which is higher than 0.125 eV for In1−xMn
 x
 P. Therefore, the largest half-metallic gap in In1−xCr
 x
 P at low concentration x = 0.0625 reveals that Cr-doped InP seem to be a more potential candidate than that Mn-doped InP for spin injection applications in the field of spintronic devices.

First-Principle Investigations of Structural, Electronic, and Half-Metallic Ferromagnetic Properties in In 1−x TM x P (TM = Cr, Mn)

We have investigated the electronic structure and half-metallic ferromagnetism in zinc blende phase of Be1−x
 V
 x
 M (M=S, Se, Te) at concentration x=0.125 by employing a first-principles calculations within the framework of density functional theory (DFT) based on the linearized augmented plane wave method (FP-LAPW), as implanted in the WIEN2k code with generalized gradient approximation functional proposed by Wu and Cohen (WC-GGA). The electronic properties exhibit half-metallic behavior. So the density of states shows the hybridization between the p (S, Se, Te) and 3d (V) states that creates the antibonding states in the gap, which stabilizes the ferromagnetic ground state associated with the double-exchange mechanism, whereas the spin polarized band structures depict half-metallic gap that increases from Be0.875V0.125S to Be0.875V0.125Se to Be0.875V0.125Te. These compounds are robust half-metallic ferromagnets with spin polarization of 100 % and predicted to be potential candidates for spin injection applications in spintronic devices. Therefore, our predictions require an experimental confirmation in the future.

First-Principles Investigation of Half-metallic Ferromagnetism in V-doped BeS, BeSe, and BeTe

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First-Principle Investigations of Structural, Electronic, and Half-Metallic Ferromagnetic Properties in In 1−x TM x P (TM = Cr, Mn)

First-Principles Investigation of Half-metallic Ferromagnetism in V-doped BeS, BeSe, and BeTe