18 Papers
48 Citations
A. Diab is an academic researcher from King Abdullah University of Science and Technology. The author has contributed to research in topics: Silicon on insulator & MOSFET. The author has an hindex of 8, co-authored 18 publications. Previous affiliations of A. Diab include Los Angeles Harbor College & Grenoble Institute of Technology.
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Papers
Room to High Temperature Measurements of Flexible SOI FinFETs With Sub-20-nm Fins
TL;DR: In this article, the authors report the temperature dependence of the core electrical parameters and transport characteristics of a flexible version of fin field effect transistor (FinFET) on silicon-on-insulator (SOI) with sub-20-nm wide fins and high-k /metal gate-stacks.
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Characterization of heavily doped SOI wafers under pseudo-MOSFET configuration
Fanyu Liu,A. Diab,Irina Ionica,K. Akarvardar,Chris Hobbs,Thierry Ouisse,Xavier Mescot,S. Cristoloveanu +7 more
TL;DR: In this paper, the authors extended the pseudo-MOSFET method for the electrical characterization of heavily doped (10 19 −10 20 ǫ −3 ) SOI wafers with 10−40nm film thickness.
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A new characterization technique for SOI wafers: Split C(V) in pseudo-MOSFET configuration
A. Diab,C. Fernandez,A. Ohata,Noel Rodriguez,I. Ionica,Young-Ho Bae,W. Van Den Daele,Frederic Allibert,Francisco Gamiz,Gerard Ghibaudo,Carlos Mazure,S. Cristoloveanu +11 more
TL;DR: In this article, the feasibility of split C-V measurements on as-fabricated SOI wafers using pseudo-MOSFET configuration was demonstrated and validated through comparison with the effective mobility extracted from static measurements.
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$RC$ Model for Frequency Dependence of Split $C\hbox{--}V$ Measurements on Bare SOI Wafers
TL;DR: In this paper, the frequency dependence of capacitance curves is modeled with an RC low-pass filter model and the feasibility of split C-V measurements for direct evaluation of carrier mobility in as-fabricated silicon-on-insulator wafers has been demonstrated.
15
(Invited) The Pseudo-MOSFET: Principles and Recent Trends
Sorin Cristoloveanu,Irina Ionica,A. Diab,Fanyu Liu +3 more
- 15 Mar 2013
TL;DR: In this article, the pseudo-MOSFET (Ψ-mosFET) is a fascinating transistor based on the upsidedown MOS configuration of semiconductor-on-insulator (SOI) wafers.
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