Intermixing the wells and barriers of quantum-well (QW) laser heterostructures generally results in an increase in the bandgap energy and is accompanied by changes in the refractive index. A technique, based on ion implantation-induced QW intermixing, has been developed to enhance the quantum-well intermixing (QWI) rate in selected areas of a wafer. Such processes offer the prospect of a powerful and simple fabrication route for the integration of discrete optoelectronic devices and for forming photonic integrated circuits.

Photonic integrated circuits fabricated using ion implantation

In this paper, we present the attractive characteristics of low-energy ion-implantation-induced quantum-well intermixing of InP-based heterostructures. We demonstrate that this method can fulfil a list of requirements related to the fabrication of complex optoelectronic devices with a spatial control of the bandgap profile. First, we have fabricated high-quality discrete blueshifted laser diodes to verify the capability of low-energy ion implantation for the controlled modification of bandgap profiles in the absence of thermal shift. Based on this result, intracavity electroabsorption modulators monolithically integrated with laser devices were fabricated, for the first time, using this postgrowth technique. We have also fabricated monolithic six-channel multiple-wavelength laser diode chips using a novel one-step ion implantation masking process. Finally, we also present the results obtained with very low-energy (below 20 keV) ion implantation for the development of one-dimensional and zero-dimensional quantum confined structures.

Low-energy ion-implantation-induced quantum-well intermixing

A pulsed laser comprises an oscillator and amplifier. An attenuator and/or pre-compressor may be disposed between the oscillator and amplifier to improve performance and possibly the quality of pulses output from the laser. Such pre-compression may be implemented with spectral filters and/or dispersive elements between the oscillator and amplifier. The pulsed laser may have a modular design comprising modular devices that may have Telcordia-graded quality and reliability. Fiber pigtails extending from the device modules can be spliced together to form laser system. In one embodiment, a laser system operating at approximately 1050 nm comprises an oscillator having a spectral bandwidth of approximately 19 nm. This oscillator signal can be manipulated to generate a pulse having a width below approximately 90 fs.

High power short pulse fiber laser

We describe a quantum-well intermixing process for the monolithic integration of various devices, each with a unique band edge. The process involves a single ion implant followed by multiple etch and anneal cycles. We have applied this method to design and fabricate widely tunable sampled-grating distributed Bragg reflector lasers with integrated electroabsorption modulators. The devices employ three unique band edges, and demonstrate exceptional tuning, gain, and absorption characteristics.

Postgrowth control of the quantum-well band edge for the monolithic integration of widely tunable lasers and electroabsorption modulators

Plasma-enhanced quantum-well intermixing (QWI) has been developed for tuning the bandgap of InGaAs-InP material using an inductively coupled plasma system. The application of inductively coupled plasma enhances the interdiffusion of point defects resulting in a higher degree of intermixing. Based on a semi-empirical model of QW interdiffusion, the bandgap blue-shift with respect to the plasma exposure time and inductively coupled plasma energy has been analyzed. The theoretical results appear to be in good agreement with the experimental data of the intermixed samples. The model serves as a good simulation tool to explain the intermixing mechanism and further to optimize the intermixing process for the fabrication of the photonic integrated circuits.

Experimental and theoretical analysis of argon plasma-enhanced quantum-well intermixing

The inroads made by arrayed component technology in the deployment of commercial dense wavelength division multiplex (DWDM) based networks has been limited by a number of issues arising from the hybrid integration of optical and electronic array elements. These are not only due to the complexities encountered during fabrication of laser arrays but are also related to the thermal management of these arrays, laser drivers and receiver electronics and the optoelectronic packaging of these components. This paper discusses the optoelectronic packaging and hybrid integration of an eight-channel DWDM transmitter and receiver to be used in an optical add/drop module (OADM). The OADM operates in a synchronous optical network (SONET) environment at OC-48 (2.488 Gb/s), with six differential add/drop channels, three electrical, and three optical.

Integration of arrayed wavelength division multiplex components into an optical add drop module transmitter and receiver

The authors have demonstrated that a conventional multiple quantum well ridge waveguide laser can also be operated as a high-speed photodetector with an internal quantum efficiency = 100% at a reverse bias of 5 V. The speed of this detector is limited by the escape of photo-generated carriers from the InGaAsP barriers to the InP cladding layer. The processes controlling the time response of the detector are considered. The photo-generated carriers must escape from the quantum well, diffuse across the InGaAsP barrier regions to the interface with the doped InP contacts and then escape over this barrier. The carrier escape mechanism is therefore a combination of thermionic emission, phonon-assisted tunneling and direct tunneling from the quantum well region. The carrier escape time is limited by the slowest of these processes. >

Photo-detection in a reverse biased InGaAs/InP laser structure at 1.5/spl mu/m

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Photonic integrated circuits fabricated using ion implantation

Integration of arrayed wavelength division multiplex components into an optical add drop module transmitter and receiver

Photo-detection in a reverse biased InGaAs/InP laser structure at 1.5/spl mu/m