A. Dargys
Lithuanian Academy of Sciences
25 Papers
137 Citations
A. Dargys is an academic researcher from Lithuanian Academy of Sciences. The author has contributed to research in topics: Electric field & Impact ionization. The author has an hindex of 8, co-authored 22 publications.
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Papers
Electron tunneling from an ultrathin quantum well in constant and alternating electric fields
Jurgis Kundrotas,A. Dargys +1 more
TL;DR: In this paper, the change of electron tunneling probability with time after instantaneous application of an electric field was calculated for a one-dimensional ultrathin quantum well (QW), and the electronic wave function bound to such QW is characterized by relatively large exponential tails on both sides of the QW.
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Impact ionization of excitons by hot carriers in quantum wells
A. Dargys,Jurgis Kundrotas +1 more
TL;DR: In this paper, the authors considered the dissociation of free excitons into electrons and holes, due to collisions between the free electrons and charge carriers accelerated by an in-plane electric field in a multiple quantum well structure, and found that the impact ionization process is rather strong and dominates over the exciton formation process at electric fields of the order of a few hundred V.
16
Dependence of the Phenomenological Energy Relaxation Time on Electric Field in n-Si and n-Ge at 77 °K
A. Dargys,T. Banys +1 more
TL;DR: In this paper, a method to measure the dependence of energy relaxation time of hot carriers τϵ in semiconductors is proposed, which is based on dependence of the phase of the second harmonic ϑ on τ ϵ.
14
Shallow impurity impact ionization transients in n-type InP and GaAs
TL;DR: In this article, the ionization dynamics of shallow donors in stepped electric fields are investigated in the nanosecond time-scale by monitoring the current transients in InP and GaAs epitaxial layers.
14
Tunneling ink-space. Application to degenerate valence band in the infinite spin-orbit interaction limit
A. Dargys,A. F. Rudolph +1 more
TL;DR: In this paper, the authors analyzed hole tunneling between light and heavy mass bands in a homogeneous semiconductor due to a strong electric field in the framework of spherical and at k = 0 degenerate bands when the spin-orbit interaction is infinite.
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