A. Constant
ON Semiconductor
37 Papers
131 Citations
A. Constant is an academic researcher from ON Semiconductor. The author has contributed to research in topics: Gate oxide & Rapid thermal processing. The author has an hindex of 10, co-authored 33 publications. Previous affiliations of A. Constant include University of Montpellier & Autonomous University of Barcelona.
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Papers
An industrial process for 650V rated GaN-on-Si power devices using in-situ SiN as a gate dielectric
Peter Moens,Charlie Liu,Abhishek Banerjee,Piet Vanmeerbeek,Peter Coppens,H. Ziad,A. Constant,Z. Li,H. De Vleeschouwer,Jaume Roig-Guitart,P. Gassot,Filip Bauwens,E. De Backer,Balaji Padmanabhan,Ali Salih,J. Parsey,Marnix Tack +16 more
- 15 Jun 2014
TL;DR: In this paper, an industrial DHEMT process for 650V rated GaN-on-Si power devices is described, which uses an in-situ MOCVD grown SiN as surface passivation and gate dielectric.
115
GaN metal-oxide-semiconductor field-effect transistor inversion channel mobility modeling
Amador Pérez-Tomás,Marcel Placidi,Xavier Perpiñà,A. Constant,Philippe Godignon,X. Jorda,Pierre Brosselard,José Antonio Alloza Millán +7 more
TL;DR: In this paper, a physics-based model on the inversion charge and charge trapped in interface states characteristics has been used to investigate the temperature dependence of inversion MOS channel mobility.
48
Schottky versus bipolar 3.3 kV SiC diodes
Amador Pérez-Tomás,Pierre Brosselard,Jawad ul Hassan,X. Jorda,Philippe Godignon,Marcel Placidi,A. Constant,José Millan,J. P. Bergman +8 more
TL;DR: In this article, a comparative study of the electrical characteristics of 3.3 kV SiC Schottky barrier (SBD), JBS and PiN diodes is presented.
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(Invited) intrinsic reliability assessment of 650V rated AlGaN/GaN based power devices: an industry perspective
Peter Moens,Abhishek Banerjee,A. Constant,Peter Coppens,Markus Caesar,Zilan Li,Steven Vandeweghe,Frederick Declercq,Balaji Padmanabhan,Woochul Jeon,Jia Guo,Ali Salih,Marnix Tack,Matteo Meneghini,Stefano Dalcanale,A Tajilli,Gaudenzio Meneghesso,Enrico Zanoni,Michael J. Uren,Indranil Chatterjee,Serge Karboyan,Martin Kuball +21 more
- 19 May 2016
TL;DR: In this article, the most important intrinsic reliability mechanisms for GaN power devices are discussed, including gate dielectric reliability, Ohmic contact reliability, accelerated drain stress testing (high temperature reverse bias--HTRB) and high voltage device wear-out testing (High voltage off-state stress--HVOS).
5 MeV proton and 15 MeV electron radiation effects study on 4H-SiC nMOSFET electrical parameters
Mihaela Alexandru,Matthieu Florentin,A. Constant,Bernd Schmidt,P. Michel,Philippe Godignon +5 more
- 24 Jun 2014
TL;DR: In this paper, the impact of proton and electron irradiations on the electrical parameters of 4H-SiC nMOSFETs has been investigated by the time bias stress instability method.
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