The rapid development of the RF power electronics requires the introduction of wide bandgap material due to its potential in high output power density, high operation voltage and high input impedance GaN-based RF power devices have made substantial progresses in the last decade This paper attempts to review the latest developments of the GaN HEMT technologies, including material growth, processing technologies, device epitaxial structures and MMIC designs, to achieve the state-of-the-art microwave and millimeter-wave performance The reliability and manufacturing challenges are also discussed

GaN-Based RF Power Devices and Amplifiers

A high-efficiency wideband code-division multiple-access (W-CDMA) base-station amplifier is presented using high-performance GaN heterostructure field-effect transistors to achieve high gain and efficiency with good linearity For high efficiency, class J/E operation was employed, which can attain up to 80% efficiency over a wide range of input powers and power supply voltages For nonconstant envelope input, the average efficiency is further increased by employing the envelope-tracking architecture using a wide-bandwidth high-efficiency envelope amplifier The linearity of overall system is enhanced by digital pre-distortion The measured average power-added efficiency of the amplifier is as high as 507% for a W-CDMA modulated signal with peak-to-average power ratio of 767 dB at an average output power of 372 W and gain of 100 dB We believe that this corresponds to the best efficiency performance among reported base-station power amplifiers for W-CDMA The measured error vector magnitude is as low as 174% with adjacent channel leakage ratio of -510 dBc at an offset frequency of 5 MHz

High-Efficiency Envelope-Tracking W-CDMA Base-Station Amplifier Using GaN HFETs

In a nitride semiconductor device according to one embodiment of the invention, a p-type gallium nitride (GaN) layer electrically connected to a source electrode and extending and projecting to a drain electrode side with respect to a gate electrode is formed on an undoped or n-type aluminum gallium nitride (AlGaN) layer serving as a barrier layer

Nitride semiconductor device

An AlN buffer layer, an undoped GaN layer, an undoped AlGaN layer, a p-type GaN layer and a heavily doped p-type GaN layer are formed in this order. A gate electrode forms an Ohmic contact with the heavily doped p-type GaN layer. A source electrode and a drain electrode are provided on the undoped AlGaN layer. A pn junction is formed in a gate region by a two dimensional electron gas generated at an interface between the undoped AlGaN layer and the undoped GaN layer and the p-type GaN layer, so that a gate voltage can be increased.

Field effect transistor and method for fabricating the same

A field-effect transistor includes a carrier transport layer made of nitride semiconductor, a gate electrode having first and second sidewall surfaces on first and second sides, respectively, an insulating film formed directly on the gate electrode to cover at least one of the first and second sidewall surfaces, first and second ohmic electrodes formed on the first and second sides, respectively, a passivation film including a first portion extending from the first ohmic electrode toward the gate electrode to cover a surface area between the first ohmic electrode and the gate electrode and a second portion extending from the second ohmic electrode toward the gate electrode to cover a surface area between the second ohmic electrode and the gate electrode, wherein the insulating film is in direct contact with at least the first and second passivation film portions, and has a composition different from that of the passivation film.

Field-effect transistor

Reliability of large periphery GaN-on-Si HFETs

A large periphery high power AlGaN/GaN HFET grown on a silicon substrate has demonstrated over 150 W of CW RF output power along with excellent drain efficiency of 65%. When operated under WCDMA modulation and 28 Vdc drain supply voltage, these devices produced 20 W of RF output power with a corresponding drain efficiency of 27% while achieving an adjacent channel power ratio (ACPR) of −39 dBc. A 36 mm device was tested in a DPD linearizer under multi-carrier WCDMA modulation and achieved 20 dB of linearity improvement with 35% drain efficiency. Lastly, device reliability data is presented and shows extrapolated 20 year drift estimates of less than 1 dB for Psat.

150 W GaN-on-Si RF Power Transistor

Gallium nitride material transistors and methods associated with the same are provided. The transistors may be used in power applications by amplifying an input signal to produce an output signal having increased power. The transistors may be designed to transmit the majority of the output signal within a specific transmission channel (defined in terms of frequency), while minimizing transmission in adjacent channels. This ability gives the transistors excellent linearity which results in high signal quality and limits errors in transmitted data. The transistors may be designed to achieve low ACPR values (a measure of excellent linearity), while still operating at high drain efficiencies and/or high output powers. Such properties enable the transistors to be used in RF power applications including third generation (3G) power applications based on W-CDMA modulation.

Gallium nitride material transistors and methods associated with the same

AlGaN/GaN heterostructure field effect transistors (HFETs) were fabricated with and without source field plates (SFP) on high resistivity Si (111) substrates A single chip GaN HFET with a SFP achieved a saturated output power (Psat) of 368W (102W/mm) with 70% maximum drain efficiency (ηmax) when operated under pulsed RF conditions and a drain bias of 60V

http://nitronex.com.previewyoursite.com/technical_articles/IEDMFinalPaper2005.pdf

A 36mm GaN-on-Si HFET producing 368W at 60V with 70% drain efficiency

GaN-on-Si transistors are put through an extensive suite of reliability tests in order to accurately assess the drift characteristics of the technology. Data is presented on DC-HTOL, RF-HTOL, and 3-temperature DC tests. In all cases results are compared with the previous generation of technology and reveal improved results. Highlights include an increase in the activation energy from 1.7eV to 2.0eV and a 50% reduction in the 20-year drift rate as predicted by DC-HTOL testing

GaN-On-Si Reliability: A Comparative Study Between Process Platforms

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