Rapid progress in the synthesis and processing of materials with structure on nanometer length scales has created a demand for greater scientific understanding of thermal transport in nanoscale devices, individual nanostructures, and nanostructured materials. This review emphasizes developments in experiment, theory, and computation that have occurred in the past ten years and summarizes the present status of the field. Interfaces between materials become increasingly important on small length scales. The thermal conductance of many solid–solid interfaces have been studied experimentally but the range of observed interface properties is much smaller than predicted by simple theory. Classical molecular dynamics simulations are emerging as a powerful tool for calculations of thermal conductance and phonon scattering, and may provide for a lively interplay of experiment and theory in the near term. Fundamental issues remain concerning the correct definitions of temperature in nonequilibrium nanoscale systems. Modern Si microelectronics are now firmly in the nanoscale regime—experiments have demonstrated that the close proximity of interfaces and the extremely small volume of heat dissipation strongly modifies thermal transport, thereby aggravating problems of thermal management. Microelectronic devices are too large to yield to atomic-level simulation in the foreseeable future and, therefore, calculations of thermal transport must rely on solutions of the Boltzmann transport equation; microscopic phonon scattering rates needed for predictive models are, even for Si, poorly known. Low-dimensional nanostructures, such as carbon nanotubes, are predicted to have novel transport properties; the first quantitative experiments of the thermal conductivity of nanotubes have recently been achieved using microfabricated measurement systems. Nanoscale porosity decreases the permittivity of amorphous dielectrics but porosity also strongly decreases the thermal conductivity. The promise of improved thermoelectric materials and problems of thermal management of optoelectronic devices have stimulated extensive studies of semiconductor superlattices; agreement between experiment and theory is generally poor. Advances in measurement methods, e.g., the 3ω method, time-domain thermoreflectance, sources of coherent phonons, microfabricated test structures, and the scanning thermal microscope, are enabling new capabilities for nanoscale thermal metrology.

/pdf/nanoscale-thermal-transport-1frv881kzm.pdf

Nanoscale thermal transport

Non-invasive precise thermometers working at the nanoscale with high spatial resolution, where the conventional methods are ineffective, have emerged over the last couple of years as a very active field of research. This has been strongly stimulated by the numerous challenging requests arising from nanotechnology and biomedicine. This critical review offers a general overview of recent examples of luminescent and non-luminescent thermometers working at nanometric scale. Luminescent thermometers encompass organic dyes, QDs and Ln3+ions as thermal probes, as well as more complex thermometric systems formed by polymer and organic–inorganic hybrid matrices encapsulating these emitting centres. Non-luminescent thermometers comprise of scanning thermal microscopy, nanolithography thermometry, carbon nanotube thermometry and biomaterials thermometry. Emphasis has been put on ratiometric examples reporting spatial resolution lower than 1 micron, as, for instance, intracellular thermometers based on organic dyes, thermoresponsive polymers, mesoporous silica NPs, QDs, and Ln3+-based up-converting NPs and β-diketonate complexes. Finally, we discuss the challenges and opportunities in the development for highly sensitive ratiometric thermometers operating at the physiological temperature range with submicron spatial resolution.

/pdf/thermometry-at-the-nanoscale-1g42e25p96.pdf

Thermometry at the nanoscale

We review recent advances in experimental methods for high spatial-resolution and high time-resolution thermometry, and the application of these and related methods for measurements of thermal transport in low-dimensional structures. Scanning thermal microscopy (SThM) achieves lateral resolutions of 50 nm and a measurement bandwidth of 100 kHz: SThM has been used to characterize differences in energy dissipation in single-wall and multi-wall carbon nanotubes. Picosecond thermoreflectance enables ultrahigh time-resolution in thermal diffusion experiments and characterization of heat flow across interfaces between materials; the thermal conductance G of interfaces between dissimilar materials spans a relatively small range, 20<G<200 MW m -2 K -1 near room temperature. Scanning thermoreflectance microscopy provides nanosecond time resolution and submicron lateral resolution needed for studies of heat transfer in microelectronic, optoelectronic and micromechanical systems. A fully-micromachined solid immersion lens has been demonstrated and achieves thermal-radiation imaging with lateral resolution at far below the diffraction limit, <2 μm. Microfabricated metal bridges using electrical resistance thermometry and joule heating give precise data for thermal conductivity of single crystal films, multilayer thin films, epitaxial superlattices, polycrystalline films, and interlayer dielectrics. The room temperature thermal conductivity of single crystal films of Si is strongly reduced for layer thickness below 100 nm. The through-thickness thermal conductivity of Si-Ge and GaAs-AlAs superlattices has recently been shown to be smaller than the conductivity of the corresponding alloy. The 3ω method has been recently extended to measurements of anisotropic conduction in polyimide and superlattices. Data for carbon nanotubes measured using micromachined and suspended heaters and thermometers indicate a conductivity near room temperature greater than diamond.

https://nanoheat.stanford.edu/sites/default/files/publications/A57.pdf

Thermometry and Thermal Transport in Micro/Nanoscale Solid-State Devices and Structures

Fundamental research and continued miniaturization of materials, components and systems have raised the need for the development of thermal-investigation methods enabling ultra-local measurements of surface temperature and thermo-physical properties in many areas of science and applicative fields. Scanning thermal microscopy (SThM) is a promising technique for nanometer-scale thermal measurements, imaging, and study of thermal transport phenomena. This review focuses on fundamentals and applications of SThM methods. It inventories the main scanning probe microscopy-based techniques developed for thermal imaging with nanoscale spatial resolution. It describes the approaches currently used to calibrate the SThM probes in thermometry and for thermal conductivity measurement. In many cases, the link between the nominal measured signal and the investigated parameter is not straightforward due to the complexity of the micro/nanoscale interaction between the probe and the sample. Special attention is given to this interaction that conditions the tip–sample interface temperature. Examples of applications of SThM are presented, which include the characterization of operating devices, the measurements of the effective thermal conductivity of nanomaterials and local phase transition temperatures. Finally, future challenges and opportunities for SThM are discussed.

Scanning thermal microscopy: A review

Miniaturization of electronic and optoelectronic devices and circuits and increased switching speeds have exasperated localized heating problems. Steady-state and transient characterization of temperature distribution in devices and interconnects is important for performance and reliability analysis. Novel devices based on nanowires, carbon nanotubes, and single molecules have feature sizes in 1–100 nm range, and precise temperature measurement and calibration are particularly challenging. In this paper we review various microscale and nanoscale thermal characterization techniques that could be applied to active and passive devices. Solid-state microrefrigerators on a chip can provide a uniform and localized temperature profile and they are used as a test vehicle in order to compare the resolution limits of various microscale techniques. After a brief introduction to conventional microthermocouples and thermistor sensors, various contact and contactless techniques will be reviewed. Infrared microscopy is based on thermal emission and it is a convenient technique that could be used with features tens of microns in size. Resolution limits due to low emissivity and transparency of various materials and issues related to background radiation will be discussed. Liquid crystals that change color due to phase transition have been widely used for hot spot identification in integrated circuit chips. The main problems are related to calibration and aging of the material. Micro-Raman is an optical method that can be used to measure absolute temperature. Micron spatial resolution with several degrees of temperature resolution has been achieved. Thermoreflectance technique is based on the change of the sample reflection coefficient as a function of temperature. This small change in 10−4–10−5 range per degree is typically detected using lock-in technique when the temperature of the device is cycled. Use of visible and near IR wavelength allows both top surface and through the substrate measurement. Both single point measurements using a scanning laser and imaging with charge coupled device or specialized lock-in cameras have been demonstrated. For ultrafast thermal decay measurement, pump-probe technique using nanosecond or femtosecond lasers has been demonstrated. This is typically used to measure thin film thermal diffusivity and thermal interface resistance. The spatial resolution of various optical techniques can be improved with the use of tapered fibers and near field scanning microscopy. While subdiffraction limit structures have been detected, strong attenuation of the signal reduces the temperature resolution significantly. Scanning thermal microscopy, which is based on nanoscale thermocouples at the tip of atomic force microscope, has had success in ultrahigh spatial resolution thermal mapping. Issues related to thermal resistance between the tip and the sample and parasitic heat transfer paths will be discussed.

Microscale and Nanoscale Thermal Characterization Techniques

A batch fabrication process has been developed for making cantilever probes for scanning thermal microscopy (SThM) with spatial resolution in the sub-100 nm range. A heat transfer model was developed to optimize the thermal design of the probes. Low thermal conductivity silicon dioxide and silicon nitride were chosen for fabricating the probe tips and cantilevers, respectively, in order to minimize heat loss from the sample to the probe and to improve temperature measurement accuracy and spatial resolution. An etch process was developed for making silicon dioxide tips with tip radius as small as 20 nm. A thin film thermocouple junction was fabricated at the tip end with a junction height that could be controlled in the range of 100-600 nm. These thermal probes have been used extensively for thermal imaging of micro- and nano-electronic devices with a spatial resolution of 50 nm. This paper presents measurement results of the steady state and dynamic temperature responses of the thermal probes and examines the wear characteristics of the probes.

Design and batch fabrication of probes for sub-100 nm scanning thermal microscopy


 This paper reports the development of a new technique for nanometer-scale thermal imaging and thermal property measurement — scanning thermal wave microscope (STWM). By raster scanning a sharp temperature-sensing probe the STWM measures the distribution of the phase lag and the amplitude of a thermal wave on the sample surface at a certain distance away from the heat source. As a benchmark experiment for this technique, the phase lag distribution of a thermal wave generated by a line heat source on a Pyrex glass sample was measured and compared with analytical solution. The effect of liquid film at the tip-sample contact on the measured phase lag was also studied. The ability of STWM to locate sub-surface heat source in a ULSI circuit was experimentally demonstrated.

Scanning thermal wave microscopy

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Design and batch fabrication of probes for sub-100 nm scanning thermal microscopy

Scanning thermal wave microscopy