A. Banerjee
ON Semiconductor
14 Papers
59 Citations
A. Banerjee is an academic researcher from ON Semiconductor. The author has contributed to research in topics: Leakage (electronics) & Gallium nitride. The author has an hindex of 8, co-authored 14 publications.
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Papers
Evidence of Hot-Electron Effects During Hard Switching of AlGaN/GaN HEMTs
Isabella Rossetto,Matteo Meneghini,Alaleh Tajalli,Stefano Dalcanale,C. De Santi,Peter Moens,A. Banerjee,Enrico Zanoni,Gaudenzio Meneghesso +8 more
TL;DR: The results demonstrate that the analyzed devices do not suffer from dynamic ON-resistance problems, and the impact of hard switching on dynamic becomes weaker at high-temperature levels, as the average energy of hot electrons decreases due to the increase scattering with the lattice.
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An industry-ready 200 mm p-GaN E-mode GaN-on-Si power technology
Niels Posthuma,Shuzhen You,Steve Stoffels,Dirk Wellekens,Hu Liang,Ming Zhao,B. De Jaeger,Karen Geens,Nicolo Ronchi,Stefaan Decoutere,Peter Moens,A. Banerjee,H. Ziad,Marnix Tack +13 more
- 13 May 2018
TL;DR: In this paper, an enhancement mode 650V rated p-GaN gate HEMTs are fabricated on 200 mm p+ Si substrates by using an industrial, Au-free process.
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$\mu s$ -Range Evaluation of Threshold Voltage Instabilities of GaN-on-Si HEMTs with p-GaN Gate
E. Canato,F. Masin,Matteo Borga,Enrico Zanoni,Matteo Meneghini,Gaudenzio Meneghesso,A. Stockman,A. Banerjee,Peter Moens +8 more
- 01 Mar 2019
TL;DR: A technique to evaluate the time-dependence of the threshold voltage instabilities in GaN-based normally-off transistors under positive gate bias and study the existence of two dominant trapping processes, having different time-kinetics.
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Negative dynamic Ron in AlGaN/GaN power devices
Peter Moens,Michael J. Uren,A. Banerjee,Matteo Meneghini,Balaji Padmanabhan,Woochul Jeon,Serge Karboyan,Martin Kuball,Gaudenzio Meneghesso,Enrico Zanoni,Marnix Tack +10 more
- 21 Jul 2017
TL;DR: In this paper, the resistivity of the [C]-doped and unintentionally-doped (UID) layers (i.e., the charge transport properties in these layers) is optimized through optimization of the GaN buffer structure.
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AlGaN/GaN power device technology for high current (100+ A) and high voltage (1.2 kV)
Peter Moens,A. Banerjee,Peter Coppens,F. Declercq,Marnix Tack +4 more
- 12 Jun 2016
TL;DR: In this article, a GaN/GaN power device with single digit Ron values of 6mΩ and leakage current of ∼100nA is presented, which is a first step to allow AlGaN/GAN power devices to compete with Si IGBTs and SiC MOSFETs.
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