These proceedings contain 54 papers grouped under the headings of: Implanted dopant activation and diffusion in silicon; Defects and microstructure; Equipment and device applications; Silicides and oxides; and Compound semiconductors

Rapid thermal processing

Rapid Thermal Processing

We have developed a double-sided silicon strip detector for the Belle silicon vertex detector upgrade. Since a radiation-hard front-end VLSI has been successfully developed, the shot noise due to the radiation-induced leakage current of the sensor will be the dominant source or the noise after irradiation in the Belle apparatus. Test structures with various strip pitches and strip widths were fabricated to study optimum strip width. The temperature dependence of the leakage current was measured with a prototype sensor after /sup 60/C gamma-ray irradiation. It was confirmed that the radiation-induced leakage current can be reduced by half by cooling the sensor from 25 to 15/spl deg/C. A radiation test with a prototype module consisting of a prototype sensor and front-end VLSI was also performed to evaluate the radiation hardness of the whole system. The signal-to-noise ratio was found to be better than 20 up to 5 Mrd(Si).

Improvement of radiation hardness of double-sided silicon strip detector for Belle SVD upgrade

A contact between a source/drain and a gate is made by making a selected portion of the gate dielectric conductive by an implant into that selected portion of the gate dielectric. The gate material is in a layer over the entire integrated circuit. Areas where gates are to connect to source/drains are indentified and the gate dielectric at those identified locations is implanted to make it conductive. The source/drains are formed so that they extend under these areas of conductive gate dielectric so that at these locations the implanted gate dielectric shorts the gate to the source/drain. This saves area on the integrated circuit, reduces the need for interconnect layers, and avoids the problems associated with depositing and etching polysilicon on an exposed silicon substrate.

Integrated circuit having interconnect to a substrate and method therefor

Thin oxide nitridation in N2O by RTP for non-volatile memories

We report an investigation of the degradation caused by ionizing radiation exposure and Fowler-Nordheim current injection in MOS capacitors with rapid thermally nitrided thin-gate oxides. The effect of nitridation conditions on the extent of the degradation was studied. It was observed that the damage caused by ionizing radiation and constant-current stressing are strongly dependent on the nitridation temperature and duration. Also, this dependence is different for the two cases. These observations are explained using some defect generation models and structural changes in oxide due to nitridation.

A comparison of radiation and hot-electron-induced damages in MOS capacitors with rapid thermally nitrided thin-gate oxides

In this paper we report a systematic and comprehensive study of the chemical and electrical properties of rapid thermally nitrided (RTN) and reoxidized nitrided (RTO) thin oxides and reliability of MOSFETs with these materials as gate dielectrics. The chemical properties of the RTN oxides are studied using AES and VFIR techniques. The nitridation mechanism is discussed and a model is proposed to explain the widely reported nitrogen and oxygen distribution in RTN oxides. Electrical properties of RTN oxides such as dielectric constant conduction mechanism fixed charge and interface state density charge trapping and hot electron and radiation hardness are investigated and are correlated with their chemical characteristics. Post nitridation anneals were performed on the nitrided oxides in 02 d N2 ambients. Charge trapping and hot electron and radiation hardness of the resulting films are studied and compared. Finally the MOSFETs with reoxidized nitrided oxides as gate dielectrics are fabricated and their performance and reliability are studied. 1.© (1991) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.

Performance and reliability of ultrathin reoxidized nitrided oxides fabricated by rapid thermal processing

A comprehensive review of chemical composition and electrical properties is presented for thin gate oxides with small amounts of nitrogen or fluorine, incorporated by rapid thermal processing. Electrical properties of these chemically modified oxides are correlated with the changes in chemical composition and the resulting structural modifications. Qualitative models described in some of the earlier works are used to establish these correlations. It is concluded that the changes in chemical composition of Si02 can be controlled to realize superior gate dielectrics for application in ULSI MOS devices.

Chemically modified ultrathin oxides fabricated by rapid thermal processing

In this paper, a detailed reliability investigation is presented for ultra-thin tunneling (∼50 A) oxides grown in N2O ambient using rapid thermal processing (RTP). These N2Oss-oxides are compared with oxides of identical thickness grown in O2 ambient by RTP. The reliability investigations include time-dependent dielectric breakdown as well as stress-induced leakage current in MOS capacitors with these gate dielectrics. Results show that ultra-thin N2O-oxides show much improved reliability as compared to oxide grown in O2 ambient.

High quality ultra-thin tunneling N2O oxides fabricated by RTP

The electrical properties of MOS capacitors with Si-implanted SiO 2 are investigated. It is demonstrated that a hysteresis effect is present in the capacitance-voltage characteristics of MOS capacitors with Si-implanted gate oxide. Both fixed charge and interface state density are observed to increase with Si-implant dose. The current conduction in these oxide films was also examined

Electrical properties of Si-implanted gate oxides

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