This paper reports the synthesis and detailed characterization of graphite thin films produced by thermal decomposition of the (0001) face of a 6H-SiC wafer, demonstrating the successful growth of single crystalline films down to approximately one graphene layer. The growth and characterization were carried out in ultrahigh vacuum (UHV) conditions. The growth process and sample quality were monitored by low-energy electron diffraction, and the thickness of the sample was determined by core level x-ray photoelectron spectroscopy. High-resolution angle-resolved photoemission spectroscopy shows constant energy map patterns, which are very sharp and fully momentum-resolved, but nonetheless not resolution limited. We discuss the implications of this observation in connection with scanning electron microscopy data, as well as with previous studies.

Synthesis and characterization of atomically-thin graphite filmson a silicon carbide substrate,

The utilization of grown or deposited graphene on solid substrates offers key benefits for functionalization processes, but especially to attain structures with a high level of control for electronics and "smart" materials. In this review, we will initially focus on the nature and properties of graphene on substrates, based on the method of preparation. We will then analyze the most relevant literature on the functionalization of graphene on substrates. In particular, we will comparatively discuss radical reactions, cycloadditions, halogenations, hydrogenations, and oxidations. We will especially address the question of how the reactivity of graphene is affected by its morphology (i.e., number of layers, defects, substrate, curvature, etc.).

The Covalent Functionalization of Graphene on Substrates

Graphene and carbon nanotubes interfaced electrochemical nanobiosensors for the detection of SARS-CoV-2 (COVID-19) and other respiratory viral infections: A review.

The Naval Research Laboratory (NRL) has developed a processing system based on an electron beam-generated plasma and applied it to the processing of graphene. Unlike conventional discharges produced by electric fields (DC, RF, microwave, etc), the plasma is driven by a high-energy (~few keV) electron beam, an approach that simplifies the relative production of species while providing comparatively high ion-to-radical production rates. The resulting plasmas are characterized by high charged particle densities (1010–1011 cm−3) and electron temperatures that are typically about 1.0 eV or lower. Accordingly, the flux to adjacent surfaces is generally dominated by ions with kinetic energies in the range of 1–5 eV, a value at or near the bond strength of most materials. This provides the potential for controllably engineering materials with monolayer precision, an attribute attractive for the processing of atomically thin material systems. This work describes the attributes of electron beam driven plasma processing system and its use in modification of graphene.

https://iopscience.iop.org/article/10.1088/1361-6463/aa7d12/pdf

Electron beam generated plasmas for the processing of graphene

A three-dimensional model for magnetized electron beam generated plasma is described, which includes a coupled fluid simulation of the bulk plasma and a Monte Carlo model for beam electrons. A modified form of the classical expressions for magnetized-plasma electron transport coefficients is used in the fluid plasma model. The plasma model is calibrated and validated using Langmuir probe measurements in a cylindrical electron beam generated plasma, where the beam is launched parallel to the magnetic field. The electron density (n e ) and temperature (T e ) are measured along and across the beam for several gas pressures and magnetic fields in Ar. The validated plasma model is then used to examine a three-dimensional electron beam generated plasma system. Generally, plasma densities are on the order of 1016 m−3 and, since there is no externally applied electric field in the plasma region, T e is below 1.25 eV in Ar. The chamber in the simulation is slightly asymmetric perpendicular to the axis of the electron beam and the magnetic field. This asymmetry combined with the E × B drift produce non-uniformities in the plasma even if the magnetic field is spatially uniform in the chamber. However, the cross-field plasma uniformity can be controlled by tailoring the magnetic field profile to enhance or reduce plasma production near the periphery of the chamber.

https://iopscience.iop.org/article/10.1088/1361-6595/aa6b49/pdf

Three-dimensional model of electron beam generated plasma

Epitaxial graphene is promising material for future graphene-based applications including high frequency devices and chemical/biological sensors. Modifying the surface chemistry of graphene allows one to control its properties and thus provides a promising route towards further broadening the device application space for this unique material. Herein, we demonstrate the use of electron beam generated plasmas as a route towards controlled oxygen doping of epitaxial graphene. X-ray photoelectron spectroscopy, Raman spectroscopy and electrical measurements are used to track the oxygen incorporation and its influence on the structural and electrical properties of epitaxial graphene.

Plasma-based chemical modification of epitaxial graphene with oxygen functionalities

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Plasma-based chemical modification of epitaxial graphene with oxygen functionalities