Thermal loading of power devices are closely related to the reliability performance of the whole converter system. The electrical loading and device rating are both important factors that determine the loss and thermal behaviors of power semiconductor devices. In the existing loss and thermal models, only the electrical loadings are focused and treated as design variables, while the device rating is normally predefined by experience with limited design flexibility. Consequently, a more complete loss and thermal model is proposed in this paper, which takes into account not only the electrical loading but also the device rating as input variables. The quantified correlation between the power loss, thermal impedance, and silicon area of insulated gate bipolar transistor (IGBT) is mathematically established. By this new modeling approach, all factors that have impacts to the loss and thermal profiles of the power devices can accurately be mapped, enabling more design freedom to optimize the efficiency and thermal loading of the power converter. The proposed model can be further improved by experimental tests, and it is well agreed by both circuit and finite element method (FEM) simulation results.

Complete Loss and Thermal Model of Power Semiconductors Including Device Rating Information

An electrical method for junction temperature measurement of MOS-gated power semiconductor devices is presented. The measurement method involves detecting the peak voltage over the external gate resistor of an insulated-gate bipolar transistor or mosfet during turn-on. This voltage is directly proportional to the peak gate current, and fluctuates with temperature due to the temperature-dependent resistance of the internal gate resistance. Primary advantages of the method include an immunity to load current variation, and a good linear relationship with temperature. A measurement circuit can be integrated into a gate driver with no disruption to operation and allows autonomous measurements controlled directly via the gate signal. Advantages and disadvantages of the method are discussed.

IGBT Junction Temperature Measurement via Peak Gate Current

The problems faced in generating analytical models for the insulated gate bipolar transistor (IGBT) and power diode are devising correct equations and determining realistic boundary conditions, especially for two-dimensional (2-D) features, while ensuring convergence of the models. These issues are addressed in this paper in relation to the temperature dependent modeling of NPT IGBTs and diodes. Simulation and experimental results are presented and compared to validate the modeling approach.

Circuit simulator models for the diode and IGBT with full temperature dependent features

The problems faced in generating analytical models for the IGBT and power diode are devising correct equations and determining realistic boundary conditions, especially for 2D features, while ensuring convergence of the models. These issues are addressed in this paper in relation to the temperature dependent modelling of IGBTs and diodes.

A thermal resistor-capacitor (RC) model is introduced for the power insulated gate bipolar transistor (IGBT) modules used in a three-phase inverter. The parameters of the model are extracted from the experimental data for the transient thermal impedance from-junction-to-case Z/sub jc/ and case-to-ambient Z/sub ca/. The accuracy of the RC model is verified by comparing its predictions with those resulting from the three-dimensional finite element method simulation. The parameter extraction algorithm is easy to adapt to other types of power modules in an industrial application environment.

A thermal model for insulated gate bipolar transistor module

The literature proposes some thermal models needed for the electrothermal simulation of power electronic systems. This paper gives a useful analysis about the choice of the thermal model circuit networks, equivalent to a discretization of the heat equation by the finite difference method (FDM) and the finite-element method (FEM), and an analytic model developed by applying an internal approximation of the heat diffusion problem. The effect of the boundary condition representation and the introduced errors on temperature response at the heat source are studied. This study is advantageous, particularly for large surges of a short time duration.

/pdf/choosing-a-thermal-model-for-electrothermal-simulation-of-3b582kjiih.pdf

Choosing a thermal model for electrothermal simulation of power semiconductor devices

The paper present a bond graph-based circuit simulator, called PACTE. PACTE enables the simulation of a complete power train but offering the various representation levels required by the different design aspects (architecture, power semiconductor devices, control loop, thermal modeling...). Particularly the representation levels are presented and a state-of-the-art in power electronic converter simulation is discussed. Limitations of available software are listed and a solution is presented that is implemented in out simulator. The features of PACTE are discussed and illustrated by a significant example (a power train including a 3-phase inverter and an asynchronous motor for automotive applications). The core of the paper is to specify the required tools for achieving the various simulations needs for power trains.

A bond graph simulator for power train simulation including semiconductor device models

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Choosing a thermal model for electrothermal simulation of power semiconductor devices

A bond graph simulator for power train simulation including semiconductor device models