A. Alaerts
Katholieke Universiteit Leuven
5 Papers
19 Citations
A. Alaerts is an academic researcher from Katholieke Universiteit Leuven. The author has contributed to research in topics: Wafer & Radiation hardening. The author has an hindex of 3, co-authored 5 publications.
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Papers
Ionizing radiation hardening of a CCD technology
TL;DR: A three-level polysilicon, buried channel charge coupled device (CCD) technology has been tested for Co/sup 60/ ionizing radiation damage up to a total dose of 90 krad(Si) as discussed by the authors.
12
Proton irradiation effects in silicon junction diodes and charge-coupled-devices☆
Eddy Simoen,Jan Vanhellemont,A. Alaerts,Cor Claeys,Eugenius Gaubas,Arvidas Kaniava,Hidenori Ohyama,Hiromi Sunaga,I. Nahsiyama,Wolfgang Skorupa +9 more
TL;DR: In this article, the degradation of p-n junction diodes increases in first order proportionally with the fluence, when submitted to 10 MeV proton irradiations in the range 5 × 109 −5 × 1011 cm−2.
6
Integration of CMOS-electronics in an SOI layer on high-resistivity silicon substrates
B. Dierickx,A. Alaerts,I. Debusschere,Eddy Simoen,J. Vlummens,Cor Claeys,Herman Maes,L. Hermans,Erik H.M. Heijne,Pierre Jarron,Francis Anghinolfi,P. Aspell,M. Campbell,F. Pengg,L. Bosisio,Ettore Focardi,P. Delpierre,A. Mekkaoui,M.C. Habrard,D. Sauvage +19 more
- 25 Oct 1992
TL;DR: In this paper, a monolithic integration of electronics and high-resistivity silicon detectors is reported based on CMOS circuit integration in the top layer of high-resistance SOI (silicon-on-insulator) wafers.
2
Characterization of the Ionizing Radiation Sensitivity of a CCD Technology
A. Simone,Ingrid Debusschere,A. Alaerts,C. Claeys +3 more
- 01 Sep 1992
TL;DR: In this paper, the radiation hardness of a charge coupled device (CCD) was characterized with respect to ionizing irradiation, and the degradation phenomena of the degradation were discussed.
Integration of CMOS-electronics and particle detector diodes in high-resistivity silicon-on-insulator wafers
B. Dierickx,Dirk Wouters,Geert Willems,A. Alaerts,I. Debusschere,Eddy Simoen,J. Vlummens,H. Akimoto,Cor Claeys,Herman Maes,L. Hermans,Erik H.M. Heijne,Pierre Jarron,Francis Anghinolfi,M. Campbell,F. Pengg,P. Aspell,L. Bosisio,Ettore Focardi,F. Forti,S. Kashigin,A. Mekkaoui,M.C. Habrard,D. Sauvage,P. Delpierre +24 more
- 01 Aug 1993
TL;DR: In this paper, a new approach to monolithic pixel detectors, based on silicon on insulator (SOI) wafers with high resistivity substrate, is pursued by the CERN RD19 collaboration.