A. A. Usikova
Ioffe Institute
8 Papers
26 Citations
A. A. Usikova is an academic researcher from Ioffe Institute. The author has contributed to research in topics: Laser & Quantum well. The author has an hindex of 2, co-authored 8 publications.
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Papers
Heterostructures of Single-Wavelength and Dual-Wavelength Quantum-Cascade Lasers
A. V. Babichev,A. S. Kurochkin,A. S. Kurochkin,E. C. Kolodeznyi,A. V. Filimonov,A. A. Usikova,V N Nevedomsky,A. G. Gladyshev,L. Ya. Karachinsky,L. Ya. Karachinsky,Innokenty I. Novikov,Innokenty I. Novikov,A. Yu. Egorov +12 more
TL;DR: In this article, the basic structure and technological conditions of growing heterostructures for single and dual-frequency quantum-cascade lasers are reported, and a stripe-structured quantum cascade laser is fabricated using molecularbeam epitaxy.
19
Lasing in 9.6-μm Quantum Cascade Lasers
A. V. Babichev,G. A. Gusev,A. N. Sofronov,D. A. Firsov,L. E. Vorob’ev,A. A. Usikova,Yu. M. Zadiranov,N. D. Il’inskaya,V. N. Nevedomskii,V. V. Dyudelev,Grigorii S. Sokolovskii,A. G. Gladyshev,L. Ya. Karachinsky,L. Ya. Karachinsky,Innokenty I. Novikov,Innokenty I. Novikov,A. Yu. Egorov +16 more
TL;DR: In this paper, the active area is based on three-phonon resonance scattering of electrons, and the threshold current density for a ridge laser 1 mm long and 27 μm wide has been found to roughly equal 3 kA/cm2 at 87 K.
14
Mode-Locked Lasers with “Thin” Quantum Wells in 1.55 μm Spectral Range
M. S. Buyalo,I. M. Gadzhiyev,N. D. Il’inskaya,A. A. Usikova,Innokenty I. Novikov,L. Ya. Karachinsky,E. S. Kolodeznyi,Vladislav E. Bougrov,A. Yu. Egorov,Efim L. Portnoi +9 more
TL;DR: In this article, the results of an experimental study of two-section semiconductor lasers with active region consisting of three 3.1 nm InGaAs/InGaAlAs quantum wells are presented.
1
Examination of the Capabilities of Metalorganic Vapor-Phase Epitaxy in Fabrication of Thin InAs/GaSb Layers
R. V. Levin,B. V. Pushnyi,I. V. Fedorov,I. V. Fedorov,A. A. Usikova,V. N. Nevedomskii,N. L. Bazhenov,K. D. Mynbaev,K. D. Mynbaev,N. V. Pavlov,G. G. Zegrya +10 more
TL;DR: In this article, the capabilities of metalorganic vapor-phase epitaxy (MOVPE) in fabrication of structures with thin (1-2 nm) alternating InAs/GaSb layers on a GaSb substrate are studied.
IR diode structures based on II-Type InAs/GaSb superlattices grown by MOCVD
I V Fedorov,R. V. Levin,V N Nevedomsky,A. A. Usikova,N. L. Bazhenov,K. D. Mynbaev,B. V. Pushnyi,G. G. Zegrya +7 more
- 01 Mar 2019
TL;DR: In this article, the Type-II InAs/GaSb superlattices consisting of 20 pairs of alternating InAs and GaSb layers of equal thickness (1 nm / 2 nm) were grown at a temperature of 500°C.